Literature DB >> 9943989

Simple analytic model for heterojunction band offsets.

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Abstract

Year:  1988        PMID： 9943989     DOI： 10.1103/physrevb.37.7112

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  3 in total

1.  Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers.

Authors:  Vyacheslav Timofeev; Alexandr Nikiforov; Artur Tuktamyshev; Vladimir Mashanov; Michail Yesin; Aleksey Bloshkin
Journal:  Nanoscale Res Lett       Date:  2018-01-19       Impact factor: 4.703

2.  Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.

Authors:  Reem Al-Saigh; Mourad Baira; Bassem Salem; Bouraoui Ilahi
Journal:  Nanoscale Res Lett       Date:  2018-06-07       Impact factor: 4.703

3.  Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures.

Authors:  Denis Rainko; Zoran Ikonic; Nenad Vukmirović; Daniela Stange; Nils von den Driesch; Detlev Grützmacher; Dan Buca
Journal:  Sci Rep       Date:  2018-10-22       Impact factor: 4.379
  3 in total

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