Literature DB >> 9943917

Growth mechanism for molecular-beam epitaxy of group-IV semiconductors.

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Abstract

Year:  1988        PMID: 9943917     DOI: 10.1103/physrevb.37.6559

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN: 0163-1829


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  1 in total

1.  Homoepitaxial Growth of Metal Halide Crystals Investigated by Reflection High-Energy Electron Diffraction.

Authors:  Pei Chen; Padmanaban S Kuttipillai; Lili Wang; Richard R Lunt
Journal:  Sci Rep       Date:  2017-01-10       Impact factor: 4.379

  1 in total

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