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Literature DB >> 9942996

Schottky-barrier formation on a covalent semiconductor without Fermi-level pinning: The metal-MoS2(0001) interface.

Abstract

Year: 1987 PMID： 9942996 DOI： 10.1103/physrevb.36.1647

Source DB: PubMed Journal: Phys Rev B Condens Matter ISSN： 0163-1829

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8 in total

1. Thermal Stability of Titanium Contacts to MoS₂.

Authors: Keren M Freedy; Huairuo Zhang; Peter M Litwin; Leonid A Bendersky; Albert V Davydov; Stephen McDonnell
Journal: ACS Appl Mater Interfaces Date: 2019-09-11 Impact factor: 9.229

Review 2. Electrical contacts to two-dimensional semiconductors.

Authors: Adrien Allain; Jiahao Kang; Kaustav Banerjee; Andras Kis
Journal: Nat Mater Date: 2015-12 Impact factor: 43.841

Review 3. Contacts for Molybdenum Disulfide: Interface Chemistry and Thermal Stability.

Authors: Keren M Freedy; Stephen J McDonnell
Journal: Materials (Basel) Date: 2020-02-04 Impact factor: 3.623

4. First principles study of Schottky barriers at Ga₂O₃(100)/metal interfaces.

Authors: Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu; Xian Zhao
Journal: RSC Adv Date: 2020-04-14 Impact factor: 3.361

5. Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface.

Authors: Kilian R Keller; Ricardo Rojas-Aedo; Huiqin Zhang; Pirmin Schweizer; Jonas Allerbeck; Daniele Brida; Deep Jariwala; Nicolò Maccaferri
Journal: ACS Photonics Date: 2022-07-20 Impact factor: 7.077

Schottky-barrier formation on a covalent semiconductor without Fermi-level pinning: The metal-MoS2(0001) interface.

1. Thermal Stability of Titanium Contacts to MoS₂.

Review 2. Electrical contacts to two-dimensional semiconductors.

Review 3. Contacts for Molybdenum Disulfide: Interface Chemistry and Thermal Stability.

4. First principles study of Schottky barriers at Ga₂O₃(100)/metal interfaces.

5. Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface.

6. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions.

Review 7. Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures.

8. Effects of Annealing Temperature and Ambient on Metal/PtSe₂ Contact Alloy Formation.

Schottky-barrier formation on a covalent semiconductor without Fermi-level pinning: The metal-MoS2(0001) interface.

1. Thermal Stability of Titanium Contacts to MoS2.

Review 2. Electrical contacts to two-dimensional semiconductors.

Review 3. Contacts for Molybdenum Disulfide: Interface Chemistry and Thermal Stability.

4. First principles study of Schottky barriers at Ga2O3(100)/metal interfaces.

5. Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface.

6. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions.

Review 7. Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures.

8. Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation.

1. Thermal Stability of Titanium Contacts to MoS₂.

4. First principles study of Schottky barriers at Ga₂O₃(100)/metal interfaces.

8. Effects of Annealing Temperature and Ambient on Metal/PtSe₂ Contact Alloy Formation.