Literature DB >> 9942378

Theory of the structural phase transition of GeTe.

.   

Abstract

Year:  1987        PMID： 9942378     DOI： 10.1103/physrevb.36.6631

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


× No keyword cloud information.
  6 in total

1.  Peierls distortion mediated reversible phase transition in GeTe under pressure.

Authors:  Zhimei Sun; Jian Zhou; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-02       Impact factor: 11.205

2.  A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation.

Authors:  Xilin Zhou; Weiling Dong; Hao Zhang; Robert E Simpson
Journal:  Sci Rep       Date:  2015-06-11       Impact factor: 4.379

3.  Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1-xMnxTe.

Authors:  M Kriener; T Nakajima; Y Kaneko; A Kikkawa; X Z Yu; N Endo; K Kato; M Takata; T Arima; Y Tokura; Y Taguchi
Journal:  Sci Rep       Date:  2016-05-10       Impact factor: 4.379

4.  Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe.

Authors:  Yan Li; Yang Li; Peng Li; Bin Fang; Xu Yang; Yan Wen; Dong-Xing Zheng; Chen-Hui Zhang; Xin He; Aurélien Manchon; Zhao-Hua Cheng; Xi-Xiang Zhang
Journal:  Nat Commun       Date:  2021-01-22       Impact factor: 14.919

5.  Structural disorder in the high-temperature cubic phase of GeTe.

Authors:  Ming Xu; Zhenyu Lei; Junhui Yuan; Kanhao Xue; Yanrong Guo; Songyou Wang; Xiangshui Miao; Riccardo Mazzarello
Journal:  RSC Adv       Date:  2018-05-11       Impact factor: 4.036

6.  Ferroelectric Control of the Spin Texture in GeTe.

Authors:  Christian Rinaldi; Sara Varotto; Marco Asa; Jagoda Sławińska; Jun Fujii; Giovanni Vinai; Stefano Cecchi; Domenico Di Sante; Raffaella Calarco; Ivana Vobornik; Giancarlo Panaccione; Silvia Picozzi; Riccardo Bertacco
Journal:  Nano Lett       Date:  2018-02-13       Impact factor: 11.189
  6 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.