Literature DB >> 9942322

Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen.

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Abstract

Entities:  

Year:  1987        PMID： 9942322     DOI： 10.1103/physrevb.36.6217

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process.

Authors:  K K Banger; Y Yamashita; K Mori; R L Peterson; T Leedham; J Rickard; H Sirringhaus
Journal:  Nat Mater       Date:  2011-01       Impact factor: 43.841
  1 in total

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