Literature DB >> 9942317

ESR linewidth behavior for barely metallic n-type silicon.

.   

Abstract

Entities:  

Year:  1987        PMID： 9942317     DOI： 10.1103/physrevb.36.6198

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


× No keyword cloud information.
  2 in total

1.  Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts.

Authors:  C H Li; O M J van 't Erve; B T Jonker
Journal:  Nat Commun       Date:  2011       Impact factor: 14.919

2.  Low-resistance spin injection into silicon using graphene tunnel barriers.

Authors:  O M J van 't Erve; A L Friedman; E Cobas; C H Li; J T Robinson; B T Jonker
Journal:  Nat Nanotechnol       Date:  2012-09-30       Impact factor: 39.213
  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.