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Literature DB >> 9940861

Deep-level transient spectroscopy studies of the interstitial carbon defect in silicon.

Abstract

Entities: Chemical

Source DB: PubMed Journal: Phys Rev B Condens Matter ISSN： 0163-1829

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Authors: H Wang; A Chroneos; C A Londos; E N Sgourou; U Schwingenschlögl
Journal: Sci Rep Date: 2014-05-09 Impact factor: 4.379

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