Literature DB >> 9940780

Detailed investigation of doping in hydrogenated amorphous silicon and germanium.

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Abstract

Entities:  

Year:  1987        PMID： 9940780     DOI： 10.1103/physrevb.35.5666

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

1.  Atomic Structure Evaluation of Solution-Processed a-IZO Films and Electrical Behavior of a-IZO TFTs.

Authors:  Dongwook Kim; Hyeonju Lee; Bokyung Kim; Xue Zhang; Jin-Hyuk Bae; Jong-Sun Choi; Sungkeun Baang
Journal:  Materials (Basel)       Date:  2022-05-10       Impact factor: 3.748

2.  Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance.

Authors:  Dongwook Kim; Hyeonju Lee; Bokyung Kim; Sungkeun Baang; Kadir Ejderha; Jin-Hyuk Bae; Jaehoon Park
Journal:  Materials (Basel)       Date:  2022-09-29       Impact factor: 3.748
  2 in total

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