Literature DB >> 9938959

Theory and experiment on the 1/f gamma noise in p-channel metal-oxide-semiconductor field-effect transistors at low drain bias.

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Abstract

Entities:  

Year:  1986        PMID： 9938959     DOI： 10.1103/physrevb.33.4898

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

Review 1.  Low-frequency 1/f noise in graphene devices.

Authors:  Alexander A Balandin
Journal:  Nat Nanotechnol       Date:  2013-08       Impact factor: 39.213

Review 2.  Stochastic Resonance in Organic Electronic Devices.

Authors:  Yoshiharu Suzuki; Naoki Asakawa
Journal:  Polymers (Basel)       Date:  2022-02-15       Impact factor: 4.329
  2 in total

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