Literature DB >> 9938223

Mobility of the two-dimensional electron gas at selectively doped n -type AlxGa1-xAs/GaAs heterojunctions with controlled electron concentrations.

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Abstract

Year:  1986        PMID： 9938223     DOI： 10.1103/physrevb.33.8291

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys.

Authors:  Omer Donmez; Mustafa Gunes; Ayse Erol; Cetin M Arikan; Naci Balkan; William J Schaff
Journal:  Nanoscale Res Lett       Date:  2012-08-31       Impact factor: 4.703
  1 in total

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