Literature DB >> 9936537

Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon.

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Abstract

Entities:  

Year:  1985        PMID： 9936537     DOI： 10.1103/physrevb.31.5525

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors.

Authors:  Andrew Yakimov; Victor Kirienko; Vyacheslav Timofeev; Aleksei Bloshkin; Anatolii Dvurechenskii
Journal:  Nanoscale Res Lett       Date:  2014-09-16       Impact factor: 4.703
  1 in total

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