Literature DB >> 36271005

Giant ferroelectric polarization in a bilayer graphene heterostructure.

Ruirui Niu1, Zhuoxian Li1, Xiangyan Han1, Zhuangzhuang Qu1, Dongdong Ding1, Zhiyu Wang1, Qianling Liu1, Tianyao Liu1, Chunrui Han2,3, Kenji Watanabe4, Takashi Taniguchi4, Menghao Wu5, Qi Ren6, Xueyun Wang6, Jiawang Hong6, Jinhai Mao7, Zheng Han8,9, Kaihui Liu1, Zizhao Gan1, Jianming Lu10.   

Abstract

At the interface of van der Waals heterostructures, the crystal symmetry and the electronic structure can be reconstructed, giving rise to physical properties superior to or absent in parent materials. Here by studying a Bernal bilayer graphene moiré superlattice encapsulated by 30°-twisted boron nitride flakes, we report an unprecedented ferroelectric polarization with the areal charge density up to 1013 cm-2, which is far beyond the capacity of a moiré band. The translated polarization ~5 pC m-1 is among the highest interfacial ferroelectrics engineered by artificially stacking van der Waals crystals. The gate-specific ferroelectricity and co-occurring anomalous screening are further visualized via Landau levels, and remain robust for Fermi surfaces outside moiré bands, confirming their independence on correlated electrons. We also find that the gate-specific resistance hysteresis loops could be turned off by the other gate, providing an additional control knob. Furthermore, the ferroelectric switching can be applied to intrinsic properties such as topological valley current. Overall, the gate-specific ferroelectricity with strongly enhanced charge polarization may encourage more explorations to optimize and enrich this novel class of ferroelectricity, and promote device applications for ferroelectric switching of various quantum phenomena.
© 2022. The Author(s).

Entities:  

Year:  2022        PMID: 36271005     DOI: 10.1038/s41467-022-34104-z

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   17.694


  31 in total

1.  Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction.

Authors:  Mengwei Si; Zhuocheng Zhang; Sou-Chi Chang; Nazila Haratipour; Dongqi Zheng; Junkang Li; Uygar E Avci; Peide D Ye
Journal:  ACS Nano       Date:  2021-03-02       Impact factor: 15.881

2.  Discovery of robust in-plane ferroelectricity in atomic-thick SnTe.

Authors:  Kai Chang; Junwei Liu; Haicheng Lin; Na Wang; Kun Zhao; Anmin Zhang; Feng Jin; Yong Zhong; Xiaopeng Hu; Wenhui Duan; Qingming Zhang; Liang Fu; Qi-Kun Xue; Xi Chen; Shuai-Hua Ji
Journal:  Science       Date:  2016-07-15       Impact factor: 47.728

3.  Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes.

Authors:  Yu Zhou; Di Wu; Yihan Zhu; Yujin Cho; Qing He; Xiao Yang; Kevin Herrera; Zhaodong Chu; Yu Han; Michael C Downer; Hailin Peng; Keji Lai
Journal:  Nano Lett       Date:  2017-08-30       Impact factor: 11.189

4.  Binary Compound Bilayer and Multilayer with Vertical Polarizations: Two-Dimensional Ferroelectrics, Multiferroics, and Nanogenerators.

Authors:  Lei Li; Menghao Wu
Journal:  ACS Nano       Date:  2017-06-14       Impact factor: 15.881

5.  Sliding ferroelectricity in 2D van der Waals materials: Related physics and future opportunities.

Authors:  Menghao Wu; Ju Li
Journal:  Proc Natl Acad Sci U S A       Date:  2021-12-14       Impact factor: 12.779

6.  Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials.

Authors:  Wenjun Ding; Jianbao Zhu; Zhe Wang; Yanfei Gao; Di Xiao; Yi Gu; Zhenyu Zhang; Wenguang Zhu
Journal:  Nat Commun       Date:  2017-04-07       Impact factor: 14.919

7.  Room temperature in-plane ferroelectricity in van der Waals In2Se3.

Authors:  Changxi Zheng; Lei Yu; Lin Zhu; James L Collins; Dohyung Kim; Yaoding Lou; Chao Xu; Meng Li; Zheng Wei; Yupeng Zhang; Mark T Edmonds; Shiqiang Li; Jan Seidel; Ye Zhu; Jefferson Zhe Liu; Wen-Xin Tang; Michael S Fuhrer
Journal:  Sci Adv       Date:  2018-07-13       Impact factor: 14.136

8.  Multiferroicity in atomic van der Waals heterostructures.

Authors:  Cheng Gong; Eun Mi Kim; Yuan Wang; Geunsik Lee; Xiang Zhang
Journal:  Nat Commun       Date:  2019-06-14       Impact factor: 14.919

9.  Purely in-plane ferroelectricity in monolayer SnS at room temperature.

Authors:  Naoki Higashitarumizu; Hayami Kawamoto; Chien-Ju Lee; Bo-Han Lin; Fu-Hsien Chu; Itsuki Yonemori; Tomonori Nishimura; Katsunori Wakabayashi; Wen-Hao Chang; Kosuke Nagashio
Journal:  Nat Commun       Date:  2020-05-15       Impact factor: 14.919

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.