Literature DB >> 36234447

Nanotechnology for Electronic Materials and Devices.

Raffaella Lo Nigro1, Patrick Fiorenza1, Béla Pécz2, Jens Eriksson3.   

Abstract

The historical scaling down of electronics devices is no longer the main goal of the International Roadmap for Devices and Systems [...].

Entities:  

Year:  2022        PMID: 36234447      PMCID: PMC9565597          DOI: 10.3390/nano12193319

Source DB:  PubMed          Journal:  Nanomaterials (Basel)        ISSN: 2079-4991            Impact factor:   5.719


The historical scaling down of electronics devices is no longer the main goal of the International Roadmap for Devices and Systems [1], but the integration of electronic components at the nanoscale is an emerging focus, coupled with the need for novel nanomaterials, emerging characterization methods and device fabrication techniques at the nanoscale. The growing interest in nanomaterials [2] can be associated with their unique properties, which are not present in bulk or thick films, and they are currently finding rapid application in many technological areas (such as high-frequency electronics [3], power devices [4], displays, energy conversion systems, energy storage [5], photovoltaics and sensors). At the same time, fabrication methods based on novel processes and/or approaches must be developed for the synthesis of the nanostructured materials, as well as accurate characterization techniques at the nanoscale for the materials and their interfaces. In this context, the aim of this Special Issue, entitled “Nanotechnology for Electronic Materials and Devices”, is to collect dedicated papers in several nanotechnological fields. The issue consists of eleven selected regular papers focusing on the latest developments in nanomaterials and nanotechnologies for electronic devices and sensors. Thus, topics such as approaches to synthesis, advanced characterization methods and device fabrication techniques have been covered in the present issue. We editors are aware that, due to the many topics related to the use of nanotechnology for electronics, the present issue cannot provide a comprehensive presentation of the arguments; however, we are confident that the main general areas have been discussed and can be summarized in the following research topics: Nanoscaled materials and their properties: several papers in this issue focus on nanolaminated oxide combinations (such as hafnium oxide/iron oxide [6] or tungsten oxide/molybdenum oxides [7]) as well as on 2D materials (molybdenum disulphides and its rare-earth-doped-thin layers [8]). Moreover, innovative synthesis approaches have been described in some papers for nanomaterials and thin films, such as aluminium nitrides [9], silicon whiskers [10] or vanadium-oxide-rich layers [11]. Other paper focus on advanced nanoscale characterization, mainly based on scanning-probe methods (scanning non linear dielectric microscopy [12] and high-resolution scanning capacitance spectroscopy [13]), as well as on surface optical techniques (photoluminescence and spectroscopic ellipsometry) [14]. Finally, some papers are dedicated to device performances [15] and circuit analysis [16], providing evidence that it is crucial to move from research to technological development to control the quality of innovative products and functionalities. We editors are grateful to all the authors for submitting their scientific results to the present Special Issue and we hope that Nanomaterials readership will find interesting imputs in the wider scenario of electronical applications of nanotechnology.
  13 in total

1.  Device and Circuit Analysis of Double Gate Field Effect Transistor with Mono-Layer WS2-Channel at Sub-2 nm Technology Node.

Authors:  Jihun Park; Changho Ra; Jaewon Lim; Jongwook Jeon
Journal:  Nanomaterials (Basel)       Date:  2022-07-04       Impact factor: 5.719

Review 2.  Progress, challenges, and opportunities in two-dimensional materials beyond graphene.

Authors:  Sheneve Z Butler; Shawna M Hollen; Linyou Cao; Yi Cui; Jay A Gupta; Humberto R Gutiérrez; Tony F Heinz; Seung Sae Hong; Jiaxing Huang; Ariel F Ismach; Ezekiel Johnston-Halperin; Masaru Kuno; Vladimir V Plashnitsa; Richard D Robinson; Rodney S Ruoff; Sayeef Salahuddin; Jie Shan; Li Shi; Michael G Spencer; Mauricio Terrones; Wolfgang Windl; Joshua E Goldberger
Journal:  ACS Nano       Date:  2013-03-26       Impact factor: 15.881

3.  A Rational Fabrication Method for Low Switching-Temperature VO2.

Authors:  László Pósa; György Molnár; Benjamin Kalas; Zsófia Baji; Zsolt Czigány; Péter Petrik; János Volk
Journal:  Nanomaterials (Basel)       Date:  2021-01-15       Impact factor: 5.076

Review 4.  Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices.

Authors:  Raffaella Lo Nigro; Patrick Fiorenza; Giuseppe Greco; Emanuela Schilirò; Fabrizio Roccaforte
Journal:  Materials (Basel)       Date:  2022-01-22       Impact factor: 3.623

5.  Boxcar Averaging Scanning Nonlinear Dielectric Microscopy.

Authors:  Kohei Yamasue; Yasuo Cho
Journal:  Nanomaterials (Basel)       Date:  2022-02-26       Impact factor: 5.076

6.  Investigation of Combinatorial WO3-MoO3 Mixed Layers by Spectroscopic Ellipsometry Using Different Optical Models.

Authors:  Miklos Fried; Renato Bogar; Daniel Takacs; Zoltan Labadi; Zsolt Endre Horvath; Zsolt Zolnai
Journal:  Nanomaterials (Basel)       Date:  2022-07-14       Impact factor: 5.719

7.  Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS2 Transistors.

Authors:  Qingguo Gao; Chongfu Zhang; Ping Liu; Yunfeng Hu; Kaiqiang Yang; Zichuan Yi; Liming Liu; Xinjian Pan; Zhi Zhang; Jianjun Yang; Feng Chi
Journal:  Nanomaterials (Basel)       Date:  2021-06-17       Impact factor: 5.076

8.  High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy.

Authors:  Patrick Fiorenza; Mario S Alessandrino; Beatrice Carbone; Alfio Russo; Fabrizio Roccaforte; Filippo Giannazzo
Journal:  Nanomaterials (Basel)       Date:  2021-06-21       Impact factor: 5.076

9.  Enhanced Electrical Performance of Monolayer MoS2 with Rare Earth Element Sm Doping.

Authors:  Shijie Li; Shidai Tian; Yuan Yao; Meng He; Li Chen; Yan Zhang; Junyi Zhai
Journal:  Nanomaterials (Basel)       Date:  2021-03-18       Impact factor: 5.076

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