| Literature DB >> 36132386 |
Sopit Phetsang1,2, Supeera Nootchanat1, Chutiparn Lertvachirapaiboon1, Ryousuke Ishikawa1, Kazunari Shinbo1, Keizo Kato1, Pitchaya Mungkornasawakul2, Kontad Ounnunkad2,3, Akira Baba1.
Abstract
The incorporation of metallic nanoobjects into devices allows to increase light harvesting, which increases the device performance. In this study, we used a combination of gold quantum dots and grating-coupled surface plasmon resonance (GCSPR) to improve the performance of organic solar cells (OSCs) with a poly(3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) photoactive layer. Gold quantum dots with a green fluorescent color (green-AuQD) were loaded into a hole transport layer (HTL) aiming to harvest photons in the UV region and emit visible light into the neighboring photoactive layer. Meanwhile, plasmonic grating structures, which were created on the photoactive layer surfaces via the nanoimprinting technique, provided an enhancement effect through light scattering and GCSPR. Thus, an excellent enhancement of OSC efficiency with a significant increase in short circuit photocurrent (J SC) and power conversion efficiency (PCE) in comparison to that of the reference cell was achieved. The fabricated device provides a J SC value as high as 8.41 mA cm-2 (a 14.11% enhancement) and a PCE value of 3.91% (a 19.57% enhancement). The systematic study clearly reveals that the remarkable enhancement of OSC efficiency is achieved by incorporating both AuQD and plasmonic grating. This journal is © The Royal Society of Chemistry.Entities:
Year: 2020 PMID: 36132386 PMCID: PMC9419240 DOI: 10.1039/d0na00169d
Source DB: PubMed Journal: Nanoscale Adv ISSN: 2516-0230
Fig. 1Schematic diagram of the fabricated green-AuQD/grating structured OSC device.
Fig. 2AFM images of the HTL films prepared from (a) PEDOT:PSS and (b) green-AuQD-loaded PEDOT:PSS. The white circles in (b) indicate the domains of aggregated green-AuQDs. AFM images of the (c) flat and (d) BD-R imprinted photoactive layers. (e) and (f) AFM line profiles that correspond to lines 1–2 and 3–4 in (f), respectively.
Fig. 3Reflectivity curves of (a) flat and (b) green-AuQD/BD-R OSCs. The reflectivity curves were recorded at various incident angles under p-pol light illumination.
Fig. 4J–V characteristics of the fabricated OSCs under illumination with an intensity of 75 mW cm−2. The OSCs were illuminated at the normal incidence angle.
Electrical parameters of the fabricated OSCs under illumination with an intensity of 75 mW cm−2. The OSCs were illuminated at the normal incidence angle
| Devices | Electrical parameters | ||||
|---|---|---|---|---|---|
|
|
| FF (%) | IPCE (%) | IPCE enhancement (%) | |
| Flat OSC | 7.37 ± 0.08 | 0.61 | 0.54 | 3.27 ± 0.03 | — |
| Green-AuQD OSC | 7.83 ± 0.07 | 0.62 | 0.54 | 3.54 ± 0.04 | 8.26 |
| BD-R OSC | 7.89 ± 0.05 | 0.63 | 0.54 | 3.61 ± 0.02 | 10.40 |
| Green-AuQD/BD-R OSC | 8.41 ± 0.11 | 0.62 | 0.55 | 3.91 ± 0.04 | 19.57 |
Fig. 5IPCE enhancement spectra of green-AuQD/BD-R OSCs under the irradiation of non-polarized light at various angles of incidence. (a) Green-AuQDs OSC, (b) BD-R OSC and (c) green-AuQD/BD-R OSC.
Fig. 6(a) Nyquist plots and (b) Bode phase plots of the fabricated OSCs. Electrochemical impedance spectroscopy (EIS) was performed under illumination with an intensity of 75 mW cm−2. The inset in (a) illustrates the equivalent circuit model of the fabricated OSC.
Fig. 7(a) Fluorescence enhancement (p/s) spectra of G-AuQDs deposited on a flat Al film and an Al-coated BD-R. (b) Fluorescence enhancement (p/s) spectra of G-AuQDs deposited on a flat Al/P3HT:PCBM film and an Al-coated BD-R/P3HT:PCBM film. The fluorescence of G-AuQDs at 530 nm was recorded under illumination with a wavelength of 350–500 nm.