| Literature DB >> 36081838 |
Igor Moravcik1,2, Martin Zelený1, Antonin Dlouhy3, Hynek Hadraba3, Larissa Moravcikova-Gouvea1, Pavel Papež1, Ondřej Fikar1,3, Ivo Dlouhy1,3, Dierk Raabe2, Zhiming Li2,4.
Abstract
We investigated the effects of interstitial N and C on the stacking fault energy (SFE) of an equiatomic CoCrNi medium entropy alloy. Results of computer modeling were compared to tensile deformation and electron microscopy data. Both N and C in solid solution increase the SFE of the face-centered cubic (FCC) alloy matrix at room temperature, with the former having a more significant effect by 240% for 0.5 at % N. Total energy calculations based on density functional theory (DFT) as well as thermodynamic modeling of the Gibbs free energy with the CALPHAD (CALculation of PHAse Diagrams) method reveal a stabilizing effect of N and C interstitials on the FCC lattice with respect to the hexagonal close-packed (HCP) CoCrNi-X (X: N, C) lattice. Scanning transmission electron microscopy (STEM) measurements of the width of dissociated ½<110> dislocations suggest that the SFE of CoCrNi increases from 22 to 42-44 mJ·m-2 after doping the alloy with 0.5 at. % interstitial N. The higher SFE reduces the nucleation rates of twins, leading to an increase in the critical stress required to trigger deformation twinning, an effect which can be used to design load-dependent strain hardening response.Entities:
Keywords: ab initio calculations; interstitials; medium entropy alloy; scanning transmission electron microscopy; stacking fault energy; strengthening
Year: 2022 PMID: 36081838 PMCID: PMC9448438 DOI: 10.1080/14686996.2022.2080512
Source DB: PubMed Journal: Sci Technol Adv Mater ISSN: 1468-6996 Impact factor: 7.821
Chemical compositions of the as-cast CoCrNi and CoCrNiN alloys analyzed by inductively coupled plasma mass spectrometry.
| Alloy | N | Co | Cr | Ni | Fe | O | S | |
|---|---|---|---|---|---|---|---|---|
| CoCrNi | (wt. %) | 0.005 | 35.2 | 30.7 | 34.0 | 0.06 | 0.012 | 0.0013 |
| (at. %) | 0.02 | 33.7 | 33.4 | 32.7 | 0.06 | 0.04 | 0.0015 | |
| CoCrNi-N | (wt. %) | 0.117 | 34.7 | 31.3 | 33.2 | 0.67 | 0.017 | 0.0019 |
| (at. %) | 0.470 | 33.1 | 33.8 | 31.8 | 0.67 | 0.06 | 0.0025 | |
Figure 1.Ab initio γAIM1 values of CoCrNiN andCoCrNiC alloys at 0 K calculated without spin-polarization for N and C atoms situated in different octahedral sites. The horizontal dashed line corresponds to the calculated γAIM1 of the CoCrNi alloy without interstitials. The results are sorted in order of increasing number of Ni atoms and then increasing number of Cr atoms forming the octahedral site. Vertical thin dashed lines separate the results for octahedral sites with the same number of Ni atoms. Schematic representation of each octahedral site is shown in the bottom part of the figure.
Figure 2.Ab initio heat of formation of CoCrNiN and CoCrNiC alloys at 0 K calculated without spin-polarization for N and C atoms situated in the same octahedral sites as on Figure 1. The black horizontal lines correspond to the calculated of the interstitial-free CoCrNi alloy with FCC and HCP structures. The results are sorted in the same order as in Figure 1. Thin color lines join the results for octahedral sites formed by the same number of Cr atoms (2 Cr atoms). Vertical thin dashed lines separate the results for octahedral sites with the same number of Ni atoms. Schematic representation of each octahedral site is shown in the upper part of the figure. Atomic configurations are identical as in Figure 1.
Figure 3.Density of states (DOS) of CoCrNiN and CoCrNiC alloys with FCC structure and with interstitials in octahedral site formed by 2 Co, 3 Cr and 1 Ni atom calculated without spin polarization. Black solid line corresponds to the total DOS per atom. The total DOS is nearly identical for CoCrNiN and CoCrNiC alloys. Blue and green solid lines correspond to the DOS of N and C interstitial, respectively, whereas blue and green dashed lines correspond to the average DOS of first nearest neighbors around interstitial, which form the octahedral site. The zero energy corresponds to the Fermi level.
Gibbs energies of the HCP stacking fault phase and the FCC matrix phase calculated by the CALPHAD method for 298 K. Gibbs free energy differences represent the relative stability of the two lattices in the given system.
| CoCrNi (J·mol−1) | CoCrNiN (J·mol−1) | CoCrNiC (J·mol−1) | ||||||
|---|---|---|---|---|---|---|---|---|
| −7078 | −5763 | 1315 | −7533 | −5955 | 1578 | −7073 | −5611 | 1463 |
Figure 4.CALPHAD results showing the differences between the Gibbs free energies of the HCP phase and the FCC matrix phase . The relative thermodynamic stability of the FCC phase increases with temperature, with N alloying up to ~1400K and with C alloying beyond the studied temperature range.
Figure 5.Microstructure evolution upon tensile deformation of CoCrNi and CoCrNiN alloys. (a) Results of the tensile testing showing; (a1) distribution of local strains in the CoCrNiN tensile sample just before the rupture event as determined by the DIC method with the red area corresponds to the necking region; (a2) corresponding tensile curve and global mechanical properties of the CoCrNiN sample from which local strain distribution is displayed. (b) Fractions of Ʃ3 twin boundaries in sample areas with engineering local strains of 60% and 90%, representing average from three measurements. (c) EBSD inverse pole figure (IPF) map of the CoCrNi alloy at 90% local strain. Twin boundaries in the elliptical region are marked by light-green lines. (d) EBSD IPF map of the CoCrNiN alloy at 90% local strain.
Figure 6.STEM images of the microstructure formed in the CoCrNiN MEA upon deformation to 3% tensile strain. (a) Overview HAADF-STEM image showing FCC grains marked as 1, 2 and 3. The operating diffraction condition in grain 2 was g2 = (20). The annealing twin boundary, stacking fault and planar dislocation slip are marked by yellow, green and grey arrows, respectively. The yellow rectangle in grain 2 highlights the area with a dislocation dissociated into Shockley partials, which is displayed in detail in part b of the figure. (b) Contrast of the dissociated dislocation allows the experimental estimation of the dissociation distance between the two partial dislocations. The corresponding stacking fault width changes between 4.9–5.2 nm. The orientation of the grains is represented by the cube in the inset.
Figure 7.STEM bright field (BF) stereo pair documenting a nucleation of a fault (green arrow) from the grain boundary in the grain 3 marked in Figure 5(a). The diffraction condition in the grain 3 was g4 = g5 = (1). The orientation of the grains is represented by the cubes in the inset.