| Literature DB >> 35957014 |
Yiteng Xing1,2, Pierre Bernstein1, Muralidhar Miryala2, Jacques G Noudem1.
Abstract
In situ MgB2 superconducting samples were prepared by using the spark plasma sintering method. The density of the obtained bulks was up to 95% of the theoretical value predicted for the material. The structural and microstructural characterizations of the samples were investigated using X-ray diffraction and SEM and correlated to their superconducting properties, in particular their critical current densities, Jc, which was measured at 20 K. Extremely high critical current densities of up to 6.75 × 105 A/cm2 in the self-field and above 104 A/cm2 at 4 T were measured at 20 K, indicating that vortex pinning is very strong. This property is mainly attributed to the sample density and MgB2 nanograins in connection to the presence of MgO precipitates and areas rich in boron.Entities:
Keywords: MgB2; critical current density; nano grains; spark plasma sintering; superconductivity
Year: 2022 PMID: 35957014 PMCID: PMC9370100 DOI: 10.3390/nano12152583
Source DB: PubMed Journal: Nanomaterials (Basel) ISSN: 2079-4991 Impact factor: 5.719
Figure 1X-ray diagram of sample A.
Figure 2(A) SEM micrograph of sample A showing the unreacted boron and MgO regions in the MgB2 matrix. (B) High-magnification SEM image of nano MgB2 grains. The inset of Figure 2A shows the EDS red-line region scan curves of boron (cyan line), oxygen (magenta line) and magnesium (orange line).
Figure 3(A) Magnetic moment of sample A as a function of the temperature. (B) Magnetic field dependence of the critical current density Jc of sample A at various temperatures. The figure also shows Jc for sample R at 20 K (blue stars). The inset shows the crossover field Bsb as a function of temperature.
Characterization of MgB2 bulks prepared using different techniques.
| Method | Sintering/ | Density | Grain Size | Jc-0T
| Jc-4T
| Reference |
|---|---|---|---|---|---|---|
| Conventional sintering (CC) | 775–800 °C | 50–60% | ~100 | 2–3 × 105 | 102–103 | [ |
| Infiltration and growth process (IG) | 750 °C | ~90% | 500 | 2 × 105 | 102 | [ |
| Hot-pressing or high-pressure processing (HP) | 1050 °C | 99% | 17–37 | 5–9 × 105 | 1–2 × 104 | [ |
| Spark plasma sintering (SPS) | 750–850 °C | 75–88% | ~132 | 5 × 105 | 4 × 103 | [ |
| In this work | 750 °C | 95% | ~58 | 7 × 105 | 104 | - |
Figure 4(A) Temperature dependence of the resistivity of sample A at 0 T with a 5 mA direct current. (B) Temperature dependence of Bc2 and Birr for the same sample. The inset shows the resistivity transition at fields ranging between 0 T and 14 T with a direction perpendicular to the SPS sintering pressure.