| Literature DB >> 35956649 |
Bowen Liu1, Fangcheng Lv1, Xiaozhou Fan1, Yuxuan Li1, Bowen Jiang1.
Abstract
The poly-m-phenyleneisophthalamide (PMIA) is widely used in the electrical field due to its numerous favorable characteristics, but its poor thermal conductivity limits its application. In this study, PMIA was modified with nano-silica (SiO2) to improve its thermal and mechanical properties. Using iso-phthalic acid and m-phenylenediamine as monomers, the changes in the thermodynamic properties and microstructure parameters of SiO2-modified PMIA were analyzed using molecular dynamics before and after modification in the temperature range of 250~450 K. It was found that adding SiO2 improves the Young's modulus and Shear modulus of PMIA, and the mechanical properties of PMIA, and SiO2/PMIA composites deteriorate with increasing temperature, but the mechanical properties of SiO2/PMIA composites are always better than those of pure PMIA in the temperature range of electrical equipment. Meanwhile, after doping SiO2 with the radius of 8 Å, the glass transition temperature of PMIA increases by 27.11 K, and its thermal conductivity increases from 0.249 W m-1 K-1 to 0.396 W m-1 K-1. When SiO2 is added to PMIA, the thermal expansion coefficient of PMIA will decrease in both glass and rubber states, and its thermal stability will improve. In terms of microstructure parameters, the free volume distribution of the SiO2/PMIA model is less easily dispersed than that of the PMIA model, indicating that the addition of SiO2 can improve the related properties of PMIA by hindering the movement of molecular chains.Entities:
Keywords: PMIA; molecular dynamics simulation; radial distribution function; thermal conductivity; thermodynamic properties
Year: 2022 PMID: 35956649 PMCID: PMC9370881 DOI: 10.3390/polym14153134
Source DB: PubMed Journal: Polymers (Basel) ISSN: 2073-4360 Impact factor: 4.967
Figure 1Establishment of the pure PMIA and SiO2/PMIA models.
Figure 2Establishment of thermal conductivity model and temperature distribution (a) The temperature distribution of the model; (b) PMIA model for heat conduction calculation; (c) SiO2/PMIA model for heat conduction calculation (4 Å); (d) SiO2/PMIA model for heat conduction calculation (8 Å); (e) SiO2/PMIA model for heat conduction calculation (12 Å).
Figure 3Thermal conductivity simulation results.
Thermal conductivity versus the nano-SiO2 radius.
| Radius of Nano-SiO2 | 0 Å | 4 Å | 8 Å | 12 Å |
|---|---|---|---|---|
| Thermal conductivity/(W m−1 K−1) | 0.249 | 0.286 | 0.396 | 0.387 |
Figure 4Coefficient of the thermal expansion of the model.
Figure 5Mechanical properties at different temperatures. (a) Young’s modulus, (b) Shear modulus.
Figure 6Free volume distribution of the model at different temperatures.
Free volume ratio of the PMIA and SiO2/PMIA models at different temperatures.
| 300 K | 350 K | 400 K | 450 K | 500 K | |
|---|---|---|---|---|---|
| 39,409.69 | 39,756.95 | 39,717.33 | 39,661.39 | 39,599.70 | |
| 6356.44 | 6517.82 | 6781.41 | 7738.20 | 8201.36 | |
|
| 0.139 | 0.141 | 0.146 | 0.163 | 0.172 |
| 41,472.52 | 41,421.98 | 41,609.79 | 41,510.58 | 41,735.27 | |
| 5537.94 | 6134.32 | 5977.88 | 6386.57 | 6318.73 | |
|
| 0.118 | 0.123 | 0.126 | 0.133 | 0.135 |
Figure 7Local enlargement of hydrogen bonding in the SiO2/PMIA model.
Figure 8RDF of total atoms of the system (a) PMIA system in different temperature; (b) PMIA and SiO2/PMIA systems.
Figure 9Schematic diagram of local structure (a) Covalent bond between N and H; (b) Covalent bond between C and H; (c) Covalent bond between C and O; (d) Distance between C atoms on benzene ring.