The chemical capacitance of La0.6Sr0.4CoO3-δ (LSC) thin film microelectrodes with different microstructures was investigated upon varying anodic DC voltages. Dense and porous electrodes (open porosity) were prepared by using different parameters during pulsed laser deposition (PLD). Furthermore, electrodes with closed porosity were fabricated by depositing a dense capping layer on a porous film. Electrochemical impedance spectroscopy (EIS) was performed in synthetic air at 460 and 608 °C with anodic DC voltages up to 440 mV. Chemical capacitance values of the electrodes were derived from the obtained spectra. While the chemical capacitance of dense and porous electrodes decreased as expected with increasing anodic overpotential, electrodes with closed pores exhibited very unusual peaks with extremely high values of >8000 F/cm3 at overpotentials of >100 mV. We demonstrate that this huge capacitance increase agrees very well with calculated chemical capacitances deduced from a real gas equation. Hence, we conclude that the formation of highly pressurized oxygen (up to gas pressures of ∼104 bar) in closed pores is responsible for this strong capacitive effect at anodic overpotentials. Such measurements can thus detect and quantify the buildup of high internal gas pressures in closed pores at the anode side of solid oxide electrolysis cells.
The chemical capacitance of La0.6Sr0.4CoO3-δ (LSC) thin film microelectrodes with different microstructures was investigated upon varying anodic DC voltages. Dense and porous electrodes (open porosity) were prepared by using different parameters during pulsed laser deposition (PLD). Furthermore, electrodes with closed porosity were fabricated by depositing a dense capping layer on a porous film. Electrochemical impedance spectroscopy (EIS) was performed in synthetic air at 460 and 608 °C with anodic DC voltages up to 440 mV. Chemical capacitance values of the electrodes were derived from the obtained spectra. While the chemical capacitance of dense and porous electrodes decreased as expected with increasing anodic overpotential, electrodes with closed pores exhibited very unusual peaks with extremely high values of >8000 F/cm3 at overpotentials of >100 mV. We demonstrate that this huge capacitance increase agrees very well with calculated chemical capacitances deduced from a real gas equation. Hence, we conclude that the formation of highly pressurized oxygen (up to gas pressures of ∼104 bar) in closed pores is responsible for this strong capacitive effect at anodic overpotentials. Such measurements can thus detect and quantify the buildup of high internal gas pressures in closed pores at the anode side of solid oxide electrolysis cells.
The
energy sector has to face drastic changes if the ever-growing
global demand for energy shall be met with zero- or low-emission technologies.
This change will certainly include a high share of renewable electricity
production from wind and solar power. However, these technologies
suffer from problems in matching supply and demand as their energy
production fluctuates on a daily, weekly, and seasonal basis, which
is why they are also referred to as variable or intermittent renewable
energy sources.[1−5] Therefore, sector coupling as well as energy-storage systems may
play an important role in the future energy supply, and hydrogen technologies
could become a key solution in both of these areas.[1−3,5−7] Especially, solid oxide electrolysis
cells (SOECs) may have a significant impact for both storage and sector
coupling because of their potential for highly efficient production
of hydrogen.[8−11] Combined with solid oxide fuel cells (SOFCs), high round trip system
efficiencies up to about 44% can be achieved (assuming 10% energy
loss by compressing hydrogen for storage purposes[12]).[9,13] Moreover, SOECs can be used for
low-emission production of syngas or CH4 via carbon capture
from fossil-fuel-fired plants and coelectrolysis of water steam and
carbon dioxide.[14,15]Nevertheless, SOECs need
to overcome obstacles concerning performance
degradation and stability of stack and cell components.[16−23] Although the materials used in SOECs are similar to those in SOFCs,
degradation phenomena can be quite different because of inverse operating
conditions. Particularly, microstructural and morphological changes
at the oxygen electrode (anode) side occurring under electrolysis
operation (i.e., anodic polarization) are a common problem, leading
to severe performance deterioration. Postoperation analyses revealed
pore and crack formation in the electrolyte material[23,24] or at the anode/electrolyte interface[22,25,26] as well as delamination of the anode from the electrolyte
or the barrier layer.[19,24,25,27−31] These degradation phenomena were reported for cells
using yttria-stabilized zirconia (YSZ) and La1–SrMnO3−δ (LSM) or La1–SrCoFe1–O3−δ (LSCF), which are the
most common SOEC materials for the electrolyte and the oxygen electrode,
respectively. Several reports suggested that the buildup of high internal
gas pressures in closed pores of the electrolyte, the anode, or at
the anode/electrolyte interface causes mechanical stress and is thus
responsible for the above-described degradation phenomena.[19,25,28,31−33] So far, the values of these gas pressures have been
estimated on the basis of the corresponding overpotential,[23,31−34] however considering their potentially detrimental effects, a method
which directly quantifies these pressures would be highly desirable.Here, we propose a novel approach to determine these internal gas
pressures which includes the analysis of the oxygen electrode’s
chemical capacitance. The chemical capacitance of an oxide Cchem is typically used to obtain information
about the defect chemistry[35−37] and is then defined as follows[38,39]where F denotes the Faraday
constant and V the electrode’s (bulk) volume.
Thus, the chemical capacitance scales with the volume and is determined
by the derivative of the oxygen chemical potential μO with respect to the concentration of oxygen cO. This approach can be extended to the gas phase, present
in a given volume V viawith the chemical potential and concentration
of O2 being (= 2 μO) and (= cO/2), respectively.
Since the derivative depends on the oxygen partial pressure, the chemical
capacitance may be used for the determination of internal gas pressures.This is demonstrated for La0.6Sr0.4CoO3−δ (LSC) thin film electrodes with closed pores
operated upon anodic polarization (corresponding to the SOEC mode).
Closed porosity was introduced by depositing a dense capping layer
on top of a porous thin film using pulsed laser deposition. Very unusual
peaks of the chemical capacitance resulted from impedance measurements,
with values exceeding 8000 F/cm3 at overpotentials
higher than 100 mV. It turned out that explaining these capacitive
peaks is nontrivial since it requires to include a real gas equation,
yielding extremely high gas pressure and fugacity values. However,
our model calculations clearly indicate that the anodic peak of the
chemical capacitance is caused by highly compressed oxygen in closed
pores corresponding to gas pressures of ∼104 bar.
Experimental Section
Sample Preparation
Yttria-stabilized
zirconia (YSZ) single crystals (5 × 5 × 0.5 mm3, (100)-oriented, 9.5 mol % Y2O3; CrysTec, Germany) were used as electrolyte substrates. For the
fabrication of the working and the counter electrodes, LSC thin films
were deposited on the YSZ single crystals using pulsed laser deposition
(PLD). The corresponding target was prepared via Pecchini synthesis
followed by a calcination of the obtained powder for 2 h at
1000 °C. Afterward the powder was pressed to a pellet
by cold isostatic pressing (300–310 MPa) and subsequently
sintered in air for 12 h at 1200 °C.Ablation
of the target was done in a vacuum chamber using a KrF excimer laser
(Complex Pro 201F, Coherent LaserSystems GmbH & Co. KG, Germany)
with a wavelength of 248 nm. In the first step, porous LSC
counter electrodes were deposited at an oxygen partial pressure of
0.4 mbar and at a substrate temperature of 450 °C.
Earlier studies revealed that electrodes prepared with these parameters
exhibit very low polarization resistances because of an increased
inner surface area (open porosity).[40,41] Three sample
types were then prepared, which differ in microstructure (i.e., porosity
and surface area) of the working electrode: (a) polycrystalline dense,
(b) porous, and (c) porous films with a dense capping layer on top
(denoted as porous/capped) (see Figure ).
Figure 1
Sketches of the different sample types investigated in
this study:
dense (a), porous (b), and porous/capped (c).
Sketches of the different sample types investigated in
this study:
dense (a), porous (b), and porous/capped (c).Table displays
the deposition parameters for the three different sample types. The
deposition temperatures were measured with a pyrometer which was adjusted
to the emissivity of YSZ. For the deposition of dense films, the laser
energy was adjusted such that the fluence inside the vacuum chamber
was approximately 1.1 J/cm2. For porous films of
similar composition, the laser energy was increased prior to the deposition
yielding a fluence of about 1.4 J cm2.
Table 1
Deposition Parameters for the Five
Different Sample Types Investigated in This Study
sample type
temperature (°C)
oxygen partial
pressure (mbar)
target–substrate distance (cm)
dense
600
0.04
6
porous
450
0.4
5
porous/capped
450/600
0.4/0.04
5/6
For all different sample types, the laser
was operated with a pulse
repetition rate of 5 Hz. By varying the pulse number, total
electrode thicknesses between 40 and 100 nm were obtained (slightly
thicker films were used for transmission electron microscopy (TEM)
measurements). The film thicknesses were determined using a profilometer
(DektakXT, Bruker, U.S.A.). The porous part of the porous/capped films
accounted for about 80% of the total electrode thickness. Immediately
after the deposition of this porous part, the parameters were changed
to those for the dense films in order to deposit a dense capping layer
with a thickness in the range of 10 to 20 nm. The deposition parameters of the dense films were chosen on the
basis of earlier studies, which confirmed dense packing of columnar
grains by TEM cross sections.[42,43] The parameters for
the porous films were also taken from a previous study, where the
porosity of the respective films was confirmed via TEM bright field
cross sections and high-angle annular dark field (HAADF) measurements.[40] After the deposition, all samples were cooled
with a rate of 15 °C per minute. The compositions of the
films were analyzed by dissolving them in hydrochloric acid and using
inductively coupled plasma-mass spectroscopy (ICP-MS). This revealed
an average film composition for all sample types of La0.599±0.019Sr0.411±0.010Co0.990±0.016O3−δ.After the PLD process, microstructuring of the working electrodes
was done via photolithography and ion beam etching. For the photolithography
process, the samples were coated with 4 × 100 μL
of photoresist (ma-N 1420 MicroResist Technology, Germany) using a
spin-coater, spinning the samples for 1 min every 100 μL.
After heating the samples for 5 min at 100 °C in
order to evaporate the excess solvent, they were exposed to UV light
(350 W, USHIO 350DP Hg, Ushio, Japan) for 1 min through a patterned
shadow mask to obtain circular microelectrodes with a diameter of
250 μm. The nonilluminated parts of the photoresist were
removed with a developer solution (ma-D 533/s, MicroResist Technology,
Germany). These areas of the LSC films were then removed via ion beam
etching (KDC 40, Kaufman & Robinson Inc., U.S.A.) using a diffuse
Ar plasma operated at 9 × 10–4 mbar
Ar with a beam voltage of 500 V and a beam current of 10 mA.
Finally, the remaining photoresist was carefully removed with a clean
room wipe, which was soaked in ethanol.
Impedance
Spectroscopy
Measurements
were performed by placing the samples in a closed fused silica apparatus
and heating them in a tube furnace to temperatures between 460 and
608 °C. The temperature was measured with a type S thermocouple,
which was positioned within 1 cm distance to the sample. Electrical
contact of the counter electrodes was realized by placing the samples
on a platinum mesh. The (working) microelectrodes were contacted by
means of platinum–rhodium needles using a microscope camera.
Impedance measurements with DC bias voltages from 0 to 440 mV
were carried out using an Alpha-A High Performance Frequency Analyzer
with an Electrochemical Test Station POT/GAL 30 V/2 A
(both: Novocontrol Technologies GmbH & Co. KG, Germany). An alternating
root-mean-square voltage of 10 mV was employed, and impedance
spectra were measured in the frequency range of 106 to
10–2 Hz with 5 data points per decade. DC
voltages and currents were also measured with the Electrochemical
Test Station. All measurements were performed in synthetic air (99.999%,
Messer Austria GmbH, Austria).
X-ray
Diffraction
The crystal structure
of differently prepared LSC thin films was analyzed via X-ray diffraction
(XRD) with a Cu radiation source in grazing incidence geometry using
an Empyrean X-ray diffractometer (Malvern Panalytical, U.K.). A parallel
beam mirror on the incident beam side and a parallel plate collimator
together with a scintillation detector on the diffracted beam side
were used for the scans, which were performed at an incidence angle
of 2°.
Inductively Coupled Plasma
Mass Spectrometry
To determine the elemental composition
of LSC thin films, an inductively
coupled plasma mass spectrometer (ICP-MS) equipped with a quadrupole
mass filter and a collision cell (iCAP QC, ThermoFisher Scientific,
Germany) was used. Prior to the analysis, a two-step dissolution process
was applied according to a previous study[43]: In a first step, the water-soluble species of Sr possibly formed
on the surface of pristine LSC samples were dissolved in 5 mL
freshly prepared ultrapure water (BarnsteadTM EasypureTM II, 18.2 MΩcm) for 30 min. In a second
step, the remaining LSC thin film was completely dissolved with 100 μL
of concentrated HCl. The obtained data was processed using Qtegra
software (ThermoFisher Scientific, U.S.A.). To minimize the influence
of polyatomic interferences, the kinetic energy discrimination (KED)
mode was used. Herein undesirable molecule ions are suppressed in
the collision cell containing a mixture of helium with 7% hydrogen.
Observed signal intensities were normalized using the signal response
for the internal standard and finally converted into concentration
units by means of external aqueous calibration. Derived Cu signals
were constant over each measurement session (less than 5% relative
standard deviation for the whole measurement period, indicating the
absence of temporal trends), and no significant difference in Cu-response
between samples and calibration standards was observed.
Transmission Electron Microscopy
Electron-transparent
lamellae of about 10 μm length
were prepared from additional films of each sample type via standard
lift-out techniques with a focused ion beam/scanning electron microscopy
(FIB/SEM) system (Scios 2 DualBeam, Thermo Fisher Scientific, Germany),
operating with a Ga-ion beam at 30 kV accelerating voltage.
Final low-voltage cleaning of the lamellae was conducted at 5 and
2 kV. Bright field transmission electron microscopy (BF-TEM)
was performed on a 200 kV FEI TECNAI F20.
Results
Film Characterization
XRD measurements
revealed the same crystal structure for LSC films of all different
sample types, and all reflexes could be assigned to the LSC perovskite
phase. In Figure ,
all LSC peaks in the different diffractograms were labeled according
to the pseudocubic structure. For the porous LSC film, only one distinct
peak is visible, which indicates a low degree of crystallinity.
Figure 2
XRD diffractograms
of dense, porous, and porous/capped films measured
in the grazing incidence geometry.
XRD diffractograms
of dense, porous, and porous/capped films measured
in the grazing incidence geometry.In order to investigate the open porosity (i.e., the surface area)
of the three different sample types, the surface compositions of the
LSC thin films were analyzed via ICP-MS measurements in accordance
with the approach described in previous works.[40,43,44] Former studies reported a water-soluble
Sr surface species being present at the surface after the preparation
of the thin films.[40,43,45] Thus, by analyzing the amount of this species, it is possible to
compare the surface area of the different thin films. At first, leaching
was done with pure H2O, particularly dissolving surface
species, followed by a subsequent chemical analysis via ICP-MS. Then
the films were completely dissolved in hydrochloric acid and an ICP-MS
measurement was again conducted to examine the amount of Sr in the
bulk (cbulk). In order to compare the
data obtained for the three different sample types, the amount of
water-soluble Sr (csurf) was related to
the total amount of Sr in the film (ctotal = csurf + cbulk). The corresponding results are shown in Table .
Table 2
Ratio of Water-Soluble
Surface Sr
(csurf) to Total Sr (ctotal = csurf + cbulk) of LSC Thin Films
sample type
csurf/ctotal (%)
dense
0.86
porous
6.75
porous/capped
1.09
We assume that the water-soluble Sr species is homogeneously
distributed
across the surface of all different films. A higher amount of dissolved
Sr thus suggests a larger accessible surface area. The poly/dense
and the porous/capped films have similar amounts of water-soluble
surface Sr, which indicates that the top layer of the porous/capped
films has a similar morphology as the dense films. Moreover, we can
conclude that the majority of the initially open pores in the bottom
layer of the porous/capped films becomes closed because of the deposition
of a dense film on top. The amount of water-soluble Sr of the porous
films is much higher than for the dense and the porous/capped samples.
In accordance with a former study,[40] we
therefore assume open porosity for the porous films leading to a surface
area that is 7 to 8 times larger compared with the dense films.BF-TEM measurements were performed to further analyze the porosity
and nanostructure of the different LSC thin films (see Figure ). TEM cross sections of a
dense film reveal dense packed and columnar growth in accordance with
an earlier study,[42] where the same oxygen
partial pressure and substrate temperature was used during deposition.
Figure 3
BF-TEM
cross sections of dense, porous, and porous/capped LSC films.
BF-TEM
cross sections of dense, porous, and porous/capped LSC films.Similar to a previous work on LSC,[40] porous films exhibit a rather dense growth in the first
approximately
25 nm followed by a porous nanostructure confirming the findings
from the ICP-MS measurements. A similar nanostructure is found for
the porous/capped film; however, above the porous layer, the film
looks dense. This is again in accordance with the conclusion from
the ICP-MS analysis suggesting that the pores get closed because of
the deposition of a dense capping layer on top.
Impedance Spectroscopy
Figure shows exemplary impedance
spectra of the different thin film microelectrodes used in this study
at various anodic DC bias voltages.
Figure 4
Impedance spectra of a dense (a), a porous
(b), and a porous/capped
(c) LSC thin film microelectrode at various anodic DC bias voltages
(UDC) measured at 460 °C.
Lines represent fits according to the sketched equivalent circuit
in (a) (with the exception of spectra at 440 mV in (a) and
(c) and at 300 mV in (b), where an additional R/CPE element
was used).
Impedance spectra of a dense (a), a porous
(b), and a porous/capped
(c) LSC thin film microelectrode at various anodic DC bias voltages
(UDC) measured at 460 °C.
Lines represent fits according to the sketched equivalent circuit
in (a) (with the exception of spectra at 440 mV in (a) and
(c) and at 300 mV in (b), where an additional R/CPE element
was used).The four spectra displayed in
each plot are examples of measurement
cycles with bias voltages from 0 to 440 mV and steps of 20 mV.
All impedance spectra contain a high frequency x-axis
intercept which corresponds to the ionic transport resistance of the
YSZ electrolyte (RYSZ), in accordance
with the literature.[37,40,46] This electrolyte resistance is temperature dependent[46] but shows no dependence on the applied bias
voltage. RYSZ was determined by extrapolating
the electrode-related impedance to the x-axis, and
this value was also used for subtracting the ohmic overpotential from
the applied bias (see the section Chemical Capacitance
Analysis). The slightly different electrolyte resistance for
the spectrum at open circuit conditions in Figure b compared with the spectra under DC bias
voltages of the porous electrode reflects a temperature difference
of about 2 °C. In addition, a semicircular feature at
low frequencies is obtained for all spectra. The size of this feature
varies depending on the applied DC bias. In agreement with former
studies, this low-frequency arc is attributed to the oxygen surface
exchange resistance Rs and the chemical
capacitance Cchem of the LSC working electrode.[36,37,40,41,43,47] Please note
that the oxygen exchange kinetics at open circuit conditions is much
faster than for similar bias-dependent measurements for LSCF reported
in literature[37] (Rs = 50 Ω cm2 at a significantly higher
temperature of 700 °C[37]), most
probably because of the different preparation parameters and thermal
history of the films. It is therefore not surprising that the bias
dependence of Rs is also different for
the measurements of this study. Moreover, the oxygen exchange rates
are strongly affected by defect concentrations (holes, oxygen vacancies)[48,49] and those vary with the applied anodic bias. Finally, also some
surface changes at high voltages may occur.[50] Thus, different and also complicated bias dependencies of the differential
resistance Rs may result (e.g., the surprising
increase and decrease of Rs for the dense
film in Figure a).
However, a more detailed analysis of the oxygen surface exchange resistance
is beyond the scope of this paper.Furthermore, additional electrode-related
features can be observed
at intermediate frequencies. As can be seen in Figure , those differ between sample types and show
a dependency on the applied DC voltage. The shape of these intermediate
frequency features varies between arc-like and Warburg-like slopes,
though a finite Warburg element alone could never fit the spectra
properly. Such intermediate frequency contributions are known from
literature data on LSC electrodes[40,42,43] and are usually attributed to processes which are
located at the YSZ/LSC interface. The Warburg-like behavior found
here in some cases may also indicate the onset of an oxygen diffusion
limitation in LSC. In general, intermediate frequency contributions
become larger with increasing DC voltage. Since the focus of this
study is on the analysis of the chemical capacitance Cchem, we did not further investigate those intermediate
frequency features.Cchem was evaluated
as long as the
low frequency semicircle was clearly separated and accounted for a
major part of the respective spectrum (i.e., when the polarization
resistance of the electrode was determined by the surface exchange
reaction). Then, one can assume that a major part of the electrode
overpotential is transferred to an oxygen chemical potential change
in the electrode.[35,36] When the intermediate and the
low-frequency contributions were similar in size (e.g., spectra at
440 mV in Figure a,c and at 300 mV in Figure b), the determination of Cchem and the corresponding chemical potential from the nominal electrode
overpotential (see below) became somewhat doubtful. Therefore, such
data were excluded from the following chemical capacitance analysis
and a different equivalent circuit was used to describe these spectra
(two R/CPE elements and a resistance in series). However, the majority
of the obtained spectra allow a reasonable analysis of Cchem since the resistance associated with the intermediate
frequency feature is considerably smaller than Rs as can be seen in Figure . The low-frequency feature of these spectra was described
by a parallel connection of a constant phase element (CPEchem) and a resistance (Rs). A constant phase
element with the impedanceconsiders the nonideal behavior of a capacitance.
The CPE parameter Q and the exponent n, which quantifies the deviation from an ideal capacitance, were
both obtained from nonlinear least-squares fitting and used to calculate
the corresponding capacitance via[51]An additional serial resistance in the equivalent circuit
(R1) considers the above-mentioned contributions
from the electrolyte (RYSZ) and the intermediate
frequency feature (see circuit in Figure a). Fitting of the spectra to one R/CPE element,
considering the low frequency semicircle, and a serial resistance R1 allowed the most reliable determination of
the chemical capacitance, which was the focal point of this paper. Tables S1–S3 show exemplary fitting results
for each sample type according to this equivalent circuit.
Chemical Capacitance Analysis
As
shown in a previous study,[40] the porous
counter electrodes exhibit very low polarization resistances. Moreover,
they have an active area being at least 500 times larger than that
of the microelectrodes. Thus, their influence on the measured impedances
is negligible and the overpotential of the (working) microelectrodes
ηWE is determined as followswhere UDC stands
for the applied DC bias voltage, IDC is
the DC current, and ηYSZ denotes the ohmic overpotential
caused by the finite ionic conductivity of the electrolyte.Figure shows the
chemical capacitances of the three different sample types, measured
at 460 °C in synthetic air. All values were normalized
to the respective electrode volume, without correcting for the pore
volume of porous and porous/capped electrodes. In the case of porous
electrodes, the chemical capacitance could only be evaluated up to
ηWE ≈ 130 mV because of a strong merging
of the intermediate and the low frequency feature.
Figure 5
Chemical capacitance
of a dense, a porous, and a porous/capped
thin film microelectrode as a function of the electrode overpotential,
measured at 460 °C.
Chemical capacitance
of a dense, a porous, and a porous/capped
thin film microelectrode as a function of the electrode overpotential,
measured at 460 °C.While the curves for the dense and the porous films are somewhat
similar, a very different and completely unexpected behavior is found
for porous/capped electrodes: a capacitance peak with extremely high
values. The latter is in the main focus of our study; however, we
first discuss the ”standard behavior” of the other films.
The chemical capacitances of these films decrease with increasing
overpotential and level off at about 250 and 60 mV,
respectively. Such a behavior is qualitatively consistent with previous
studies on LSC and similar mixed conducting oxides upon anodic polarization.[35−37] The corresponding chemical capacitance is caused by the redox reaction
of the transition metal cations and its dependence on the oxygen chemical
potential. This reaction is accompanied by a change in concentration
of oxygen vacancies, which are the minority charge carriers under
these conditions. The general behavior of a decreasing chemical capacitance
with increasing overpotential can thus be attributed to the decrease
of the oxygen vacancy concentration with increasing chemical potential
of oxygen.[52−57] As shown in the literature,[35,36] the concentration of
oxygen vacancies and other defects solely depend on the chemical potential
of oxygen in the electrode according toregardless of the respective contribution
of the overpotential ηWE and the actual atmospheric
partial pressure (assuming an ideal gas). Here, stands for
the chemical potential of oxygen
at 1 bar and R, T are the
usual notations of the universal gas constant and the temperature,
respectively. Hence, applying anodic (i.e., positive) overpotential
leads to an increase of the chemical potential of oxygen. The validity
of eq requires that
the transport of charge carriers in the thin film is fast compared
to the oxygen surface exchange reaction. In addition, we neglect that
a certain part of the electrode overpotential ηWE refers to the intermediate frequency feature and does not change in the entire electrode. However, as long
as the low-frequency arc is the dominant feature in the corresponding
impedance spectra (see above), eq is a reasonable approximation.Moreover, one
may introduce a nominal oxygen partial pressure inside
the working electrode , as similarly done in former studies,[35,36] according toand thus we getwhich further illustrates the relation between
oxygen partial pressure, the electrode’s overpotential, and
the oxygen chemical potential. However, please note that considering
the high anodic overpotentials of the measurements in this study, eqs and 8 exceed their range of validity, since ideal gas behavior is assumed.
The extension to a real gas is discussed in more detail below.The overall lower capacitance values for the porous films may be
a result of the oxygen exchange reaction taking place along the open
pores, which can lead to inactive parts of the film. Apart from not
considering the porosity of these films for the volume normalization,
this effect contributes to a further reduction of the effective volume.
This explanation is also supported by the higher capacitance values
of the porous/capped electrodes at low overpotentials. The different
slopes of the dense and the porous electrodes may be attributed to
strain effects and/or contributions from grain boundaries since porous
films show a low degree of crystallinity (see Figure ). A more detailed analysis of the decreasing
chemical capacitance is beyond the scope of this study.The
chemical capacitance of porous/capped electrodes also decreases
with increasing overpotential, however only up to about 40 mV.
At higher overpotentials, these electrodes exhibit a pronounced capacitance
peak at about 150 mV with maximum values up to 8200 F/cm3. Thus, they display a completely different and unexpected
behavior. After reaching this maximum, the chemical capacitance again
decreases with increasing overpotentials. This capacitive peak was
found for all porous/capped microelectrodes on several different samples
at overpotentials of about 150 and 190 mV for temperatures
of 460 and 608 °C, respectively (see Figure a). Interestingly, the chemical capacitances
for different temperatures show a considerable overlap when plotting
against the electrodes’ oxygen fugacity (see discussion below)
as depicted in Figure b. Additionally, the peak remains with only little changes if electrodes
were cycled stepwise up to about 300 mV and subsequently back
to 0 mV. To the best of the authors’ knowledge, such
an increase of the chemical capacitance under anodic polarization
in synthetic air has not been reported in the literature yet.
Figure 6
Chemical capacitance
of porous/capped thin film microelectrodes
measured at 460 and 608 °C as a function of the electrodes’
overpotential (a) and equivalent fugacity (b). Two different samples
were used for the different temperatures.
Chemical capacitance
of porous/capped thin film microelectrodes
measured at 460 and 608 °C as a function of the electrodes’
overpotential (a) and equivalent fugacity (b). Two different samples
were used for the different temperatures.This behavior cannot be explained by the standard defect chemical
interpretation of the chemical capacitance[35,36] and clearly suggests the involvement of an additional species in
the redox reaction contributing to the chemical capacitance. Since
this phenomenon was only observed for the porous/capped samples, we
may conclude that closed porosity is required for the occurrence of
this chemical capacitance peak.In the following discussion,
we show that the appearance of this
pronounced capacitance maximum, its temperature dependence and overpotential
dependence, as well as its absolute value can be excellently explained
by high pressure oxygen storage in closed pores, provided that real
gas equations instead of ideal gas laws are considered.
Mechanistic Discussion
A mixed ionic and electronic
conducting oxide has the ability to
shift its nonstoichiometry (i.e., to change δ of La0.6Sr0.4CoO3−δ, upon external drivers
such as oxygen partial pressure, temperature, or bias voltage). However,
as already discussed above, this phenomenon can only explain the baseline
of the chemical capacitance curve with decreasing Cchem values. Therefore, another redox process has to contribute
to the chemical capacitance. On the basis of the requirement of closed
porosity in order to obtain the capacitive peak at anodic overpotentials,
we now consider the formation and storage of neutral oxygen gas in
closed pores as an additional contribution to Cchem. Figure depicts this reaction in closed pores of a porous/capped film.
Figure 7
Sketch
of neutral oxygen gas formation and storage in closed pores
of a porous/capped film.
Sketch
of neutral oxygen gas formation and storage in closed pores
of a porous/capped film.Assuming ideal gas behavior,
the corresponding O2 gas
reservoir acts as a chemical capacitor with a capacitance according
towith the film porosity λ and the oxygen
partial pressure in closed pores . This relation yields a continuous increase
of the capacitance with increasing partial pressure or correspondingly,
with increasing anodic overpotential (see Figure ). Even though a strong increase was indeed
found above 40 –60 mV, the measured capacitance
curve is not predicted by eq . Rather, the capacitance decreased after reaching a maximum
value which appeared at overpotentials at about 150 and 190 mV for
temperatures of 460 and 608 °C, respectively. According to eq , these overpotentials
correspond to high equivalent partial pressures between 1.5 ×
103 and 8 × 103 bar, respectively,
and thus to values beyond the limits of ideal gas behavior. This is
even more true for overpotentials far beyond the maximum; 300 mV
at 460 °C, for example, results in a nominal pressure
of 3.7 × 107 bar.
Figure 8
Calculated
chemical capacitance of an ideal and a
real high-pressure oxygen gas and experimentally
obtained chemical capacitance of a porous/capped electrode at 460 °C
as a function of the electrode overpotential. The gray dashed line
represents the fit and the corresponding extrapolation of the experimental
capacitance values at low overpotentials . Additionally, the green curve shows the
sum of this extrapolation and the capacitance of the real gas approach.
Calculated
chemical capacitance of an ideal and a
real high-pressure oxygen gas and experimentally
obtained chemical capacitance of a porous/capped electrode at 460 °C
as a function of the electrode overpotential. The gray dashed line
represents the fit and the corresponding extrapolation of the experimental
capacitance values at low overpotentials . Additionally, the green curve shows the
sum of this extrapolation and the capacitance of the real gas approach.Consequently, we have to consider real gas behavior.
In the following,
we do this in terms of the Soave–Redlich–Kwong (SRK)
equation of state[58] according towith denoting
the molar volume of O2 and Tc = 154.6 K and pc = 50.46 bar
being the critical temperature
and critical pressure of O2,[59] respectively. The α parameter contains the acentric factor
of oxygen ωa = 0.022, which takes account of the
influence of intermolecular forces depending on the orientation of
the molecule.[59] The fugacity coefficient
ϕ corresponding to the Soave–Redlich–Kwong (SRK)
equation of state can be calculated as follows[58]with the fugacity f and the
compressibility factor Z beingFor the calculation
of the chemical capacitance of a real gas,
it is necessary to consider the fugacity coefficient for the oxygen
chemical potential according toBy taking the values for and ϕ
calculated according to eqs and 14, respectively, in eq was determined numerically.In order to compare
the capacitance obtained from this calculation
with our experimental data, the overpotential ηWE relative to the oxygen partial pressure in synthetic air is related
to the fugacity f and the fugacity coefficient ϕ
byAs a consequence, for high
anodic overpotentials, the equivalent
oxygen partial pressure defined in eq should be replaced by the equivalent oxygen
fugacity as followsFigure shows
the
calculated chemical capacitance of an ideal and a real oxygen gas
as well as the experimental values of a porous/capped electrode for
a temperature of 460 °C. The overall closed porosity of
the porous/capped film (including the dense capping layer) of the
calculated curves was the only free parameter in the calculation and
was adjusted in order to obtain the best agreement with the experimental
data. This yielded a closed porosity of λ = 0.0425. The chemical
capacitance of a real gas thus exhibits an increase with a maximum
at a very similar overpotential as the experimentally determined capacitance.
Moreover, unlike for the ideal gas approach, the capacitance of the
real gas decreases with increasing overpotential, that is, with increasing
oxygen concentration, after reaching a maximum at 140.5 mV.
The sum of the calculated real gas capacitance and the extrapolation
of the defect-related LSC chemical capacitance at low overpotentials
agrees rather well with the experimentally obtained capacitance of
a porous/capped electrode.At high overpotentials, the calculated
capacitances are lower than
the experimental values. This deviation may have several possible
reasons including a continuous loss of oxygen e.g. via leaky grain
boundaries in the dense top layer or some errors in determining the
proper local fugacity due to neglecting any interfacial and/or transport
overpotentials. Additionally, the high oxygen pressure may induce
redox processes in or near pores which could further contribute to
the increased experimental capacitances at high overpotentials, for
example, SrO2 formation from SrO and O2. From
thermodynamic data,[60] the stability limit
for the reaction of SrO to SrO2 would correspond to an
overpotential of 67 mV at 445 °C, which is lower than
the overpotentials for which deviations from our model are observed.
However, for the system in our study, it needs to be considered that
the thermodynamics of SrO on or in LSC are different than for bulk
SrO. We therefore expect a shift of the corresponding stability limit
to higher overpotentials at which the reaction could also contribute
to the increased chemical capacitance. Further deviations may occur
because of particle interactions at extremely high densities.However, because of the very good agreement of the calculated curve
with the experimental data at moderate overpotentials and the fact
that the suggested mechanism explains the decrease of the capacitance
with increasing overpotential after reaching a maximum, we conclude
that the formation of high-pressure oxygen gas in closed pores is
responsible for the strong capacitance increase upon anodic polarization.
Furthermore, calculations based on the presented real gas model yield
a shift of the capacitance maximum to higher overpotentials with increasing
temperature as observed in our experiments. The calculations based
on the real gas model predict a peak shift from 141 mV at 460 °C
to 174 mV at 608 °C and the corresponding experiments
yield peaks at 154 mV and 194 mV, respectively. As already
described above, the chemical capacitance curves measured at 460 and
608 °C overlap when they are plotted as a function of the electrodes’
oxygen fugacity according to eq . This overlap indicates that the storage of highly
pressurized O2, which causes the Cchem increase, occurs at particular fugacity values.As already mentioned above, the capacitance peak was reproducibly
found when performing several measurements on one electrode. Besides,
no morphological changes were visible in the optical microscope after
measurements on porous/capped electrodes at overpotentials >300 mV.
This indicates that closed pores were largely not destructed (i.e.,
opened) in our measurements despite (mechanical) gas pressure values
in the range of 104 bar. Nevertheless, the long-term
stability of such closed pores upon polarization can still be a serious
issue in real SOEC electrodes. Tiny closed pores at interfaces or
within electrode particles may be exposed to extremely high true (mechanical)
gas pressures of ∼104 bar for long times
which may cause degradation (e.g., delamination or pore and crack
formation).The existence of this capacitance peak due to closed
porosity may
also be used as a nondestructive observation tool during cell operation
for detecting the presence of closed pores at an early stage in a
real SOEC anode. Even if the ratio between closed pore volume to LSC
bulk is a factor of 300 lower than in our model electrodes, a shoulder
is visible on the defect-related Cchem baseline. Moreover, the presented electrochemical method is capable
of detecting any high pressure oxygen build-up in closed porosity
at the anode side of SOECs, regardless of the location, as the internal
oxygen formation is always associated with an increased chemical capacitance.
Thus, it should be possible to detect closed pores or cracks (and
the development of high pressure oxygen therein) at the anode/electrolyte
interface and even in the electrolyte close to that interface. Nevertheless,
the kinetics of the associated oxygen exchange reaction is important
since 1/(R·Cchem) determines the frequency of the respective feature in the impedance
spectrum (R being the resistance of the oxygen production).
Therefore, a large exchange resistance R and slow
electron transport in the electrolyte might lead to extremely low
frequencies of <10–3 Hz, which may render
impedance measurements difficult.In addition to the implications
of this effect for the oxygen electrode
of SOECs, we can also attempt to extract fundamental data of pressurized
O2 at high temperatures that are otherwise hardly accessible. Figure displays the oxygen
molar volume calculated from a cumulative numerical integration over
the peak of the experimental capacitance data shown in Figure . Subtracting the extrapolation
of the fit at low overpotentials according toyields the volume specific charge QO of the oxygen gas formation. The corresponding
molar volume was calculated as follows:with the Avogadro constant NA. The oxygen
molar volume obtained from integrating the
curve of
the real gas model in Figure is also displayed. Both curves demonstrate that we may face
oxygen molar volumes in the 30 cm3/mol range. For
the purpose of comparison it is worth mentioning that solid oxygen
exhibits about 15 cm3/mol at 10 GPa and room
temperature.[61]
Figure 9
Molar volume according
to the real gas model shown in eq compared to the molar
volume Vm calculated from experimental
chemical capacitance data shown in Figure as a function of the electrode overpotential
and the corresponding fugacity.
Molar volume according
to the real gas model shown in eq compared to the molar
volume Vm calculated from experimental
chemical capacitance data shown in Figure as a function of the electrode overpotential
and the corresponding fugacity.Figure a illustrates
the deviation of the gas pressure according to the real gas model
from the equivalent partial pressure calculated via Nernst’s
equation as shown in eq . Here it is clearly demonstrated that at overpotentials higher than
approximately 140 mV (equivalent to a fugacity of about 148 MPa)
the oxygen gas pressure does not increase exponentially with increasing
overpotential (or linearly with the fugacity). In particular, the
capacitance maximum obtained for the porous/capped electrode at 460 °C
corresponds to a (mechanical) gas pressure of about 2000 bar
and thus already deviates from the equivalent partial pressure according to Nernst’s equation
as
defined in eq which
yields 2800 bar and is actually the fugacity f of oxygen (see eq ). The difference between gas pressure and fugacity becomes even
larger at higher overpotentials (or fugacities) which is further demonstrated
by plotting the fugacity coefficient ϕ (see Figure a). For overpotentials (fugacities)
< 130 mV (<103 bar) ϕ ≈
1 results, indicating ideal gas behavior. However, at higher overpotentials
(fugacities), ϕ increases drastically which reflects that at
these overpotentials, the O2 gas formation and storage
in our LSC films occurs at conditions far beyond ideal gas limitations.
Figure 10
(a):
Oxygen gas pressure and
fugacity coefficient ϕ obtained
from eqs and 14, respectively. (b): Oxygen concentration according
to the ideal and real gas model,
respectively. All quantities are plotted as a function of the fugacity
and the corresponding electrode overpotential at 460 °C.
(a):
Oxygen gas pressure and
fugacity coefficient ϕ obtained
from eqs and 14, respectively. (b): Oxygen concentration according
to the ideal and real gas model,
respectively. All quantities are plotted as a function of the fugacity
and the corresponding electrode overpotential at 460 °C.Figure b displays
the oxygen concentration as a function of the fugacity and the corresponding
electrode overpotential at 460 °C. The chemical capacitance is determined by the derivative
of the
oxygen concentration with
respect to the fugacity as shown in eq . This corresponds to
the slope of the concentration
curve in Figure b. Hence, the increasing slope of the concentration curve with a
maximum at 140 mV directly reflects the increasing Cchem curve and the maximum peak values at similar
overpotentials. Furthermore, the decreasing concentration slope at
higher overpotentials explains the peak-shaped Cchem curve with decreasing values beyond the maximum.
Conclusion
The chemical capacitance of LSC thin film
microelectrodes with
different microstructures was analyzed upon varying anodic DC voltages.
In the case of dense and porous electrodes (open porosity), the chemical
capacitance decreased with increasing overpotential in accordance
with literature due to the decrease of the oxygen vacancy concentration.
However, porous electrodes with a dense capping layer (closed porosity)
exhibited an increase of the chemical capacitance with extremely high
peak values 8000 F/cm3 at
anodic
overpotentials above 100 mV. In addition, it was shown that
a higher measurement temperature leads to a shift of the capacitive
peak to higher overpotentials.Since this novel capacitive effect
requires closed porosity, we
considered the formation of high pressure oxygen in closed pores and
calculated the corresponding chemical capacitance according to the
Soave–Redlich–Kwong real gas equation. The thus calculated
capacitance curve agrees very well with the experimental data at moderate
overpotentials. Moreover, the real gas behavior explains the unexpected
decrease of the chemical capacitance with increasing overpotential
beyond the maximum despite increasing oxygen concentration in the
closed pores. Therefore, we conclude that the formation of high pressure
oxygen in closed pores is responsible for the observed peak of the
chemical capacitance upon anodic polarization. This capicitive peak
was reproducibly found even when measuring one electrode several times,
which indicates that closed pores largely withstood gas pressures
of ∼104 bar.More specifically the
present study shows the following:The chemical capacitance of LSC thin film electrodes
can be used to observe and quantify oxygen gas pressures in closed
pores upon anodic polarization in synthetic air. This capacitive effect
can also be of importance for SOEC applications. Whenever some sort
of closed porosity occurs in such SOEC anodes or at the anode/electrolyte
interface, either due to degradation phenomena or simply because of
the configuration of the cell (i.e., current collector or interconnect
on top of the electrode), high pressure oxygen will form and lead
to high mechanical load.Analyzing the
chemical capacitance of an electrode in
SOEC mode could be used for detecting any kind of closed porosity
at an early stage and thus may prevent destructive processes due to
high pressure build-up. Since even ratios of closed porosity to bulk
volume in the order of 10–4 should be detectable,
this method might be used as a nondestructive measurement tool during
SOEC operation.The formation of high
pressure oxygen in closed pores
corresponds to extremely high oxygen densities approaching molar volumes
in the 30 cm3/mol range. The closed pores thus act
as kind of nanovessels which can withstand pressures in the gigapascal
range. Accordingly, determining mechanical gas pressures on the anode
side of SOECs requires the application of real gas equations and fugacities.Closed pores in thin films can act as a
chemical oxygen
storage with capacitances 8000 F/cm3 or 400 mAhg-1V-1 and thus may be technologically
interesting.
Authors: Matthäus Siebenhofer; Christoph Riedl; Alexander Schmid; Andreas Limbeck; Alexander Karl Opitz; Jürgen Fleig; Markus Kubicek Journal: J Mater Chem A Mater Date: 2021-11-05
Authors: Markus Kubicek; Tobias M Huber; Andreas Welzl; Alexander Penn; Ghislain M Rupp; Johannes Bernardi; Michael Stöger-Pollach; Herbert Hutter; Jürgen Fleig Journal: Solid State Ion Date: 2014-03-01 Impact factor: 3.785