| Literature DB >> 35836003 |
Kin Fai Mak1,2,3, Jie Shan4,5,6.
Abstract
Moiré materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moiré materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane-Mele-Hubbard physics and equilibrium moiré excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moiré materials.Entities:
Year: 2022 PMID: 35836003 DOI: 10.1038/s41565-022-01165-6
Source DB: PubMed Journal: Nat Nanotechnol ISSN: 1748-3387 Impact factor: 40.523