| Literature DB >> 35798983 |
Jun-Kyul Song1,2,3, Junhee Kim1,2,3, Jiyong Yoon4,5, Ja Hoon Koo1,3, Hyunjin Jung4,5, Kyumin Kang4,5, Sung-Hyuk Sunwoo1,2,3, Seungwon Yoo1,6, Hogeun Chang1,2,3, Jinwoung Jo1,2,3, Woonhyuk Baek1,2,3, Sanghwa Lee1,2,3, Mincheol Lee1,3, Hye Jin Kim1,3, Mikyung Shin4,7, Young Jin Yoo8, Young Min Song8, Taeghwan Hyeon9,10,11,12, Dae-Hyeong Kim13,14,15,16,17, Donghee Son18,19,20,21,22.
Abstract
High-performance photodetecting materials with intrinsic stretchability and colour sensitivity are key requirements for the development of shape-tunable phototransistor arrays. Another challenge is the proper compensation of optical aberrations and noises generated by mechanical deformation and fatigue accumulation in a shape-tunable phototransistor array. Here we report rational material design and device fabrication strategies for an intrinsically stretchable, multispectral and multiplexed 5 × 5 × 3 phototransistor array. Specifically, a unique spatial distribution of size-tuned quantum dots, blended in a semiconducting polymer within an elastomeric matrix, was formed owing to surface energy mismatch, leading to highly efficient charge transfer. Such intrinsically stretchable quantum-dot-based semiconducting nanocomposites enable the shape-tunable and colour-sensitive capabilities of the phototransistor array. We use a deep neural network algorithm for compensating optical aberrations and noises, which aids the precise detection of specific colour patterns (for example, red, green and blue patterns) both under its flat state and hemispherically curved state (radius of curvature of 18.4 mm).Entities:
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Year: 2022 PMID: 35798983 DOI: 10.1038/s41565-022-01160-x
Source DB: PubMed Journal: Nat Nanotechnol ISSN: 1748-3387 Impact factor: 40.523