| Literature DB >> 35733115 |
Natsuki Mizutani1, Akira Kawanabe1, Yuka Jinno1, Hirotaka Narita2, Tomoko Yonezawa1, Atsushi Nakagawa2, Yasushi Okamura1,3.
Abstract
Voltage-sensing phosphatase (VSP) consists of a voltage sensor domain (VSD) and a cytoplasmic catalytic region (CCR), which is similar to phosphatase and tensin homolog (PTEN). How the VSD regulates the innate enzyme component of VSP remains unclear. Here, we took a combined approach that entailed the use of electrophysiology, fluorometry, and structural modeling to study the electrochemical coupling in Ciona intestinalis VSP. We found that two hydrophobic residues at the lowest part of S4 play an essential role in the later transition of VSD-CCR coupling. Voltage clamp fluorometry and disulfide bond locking indicated that S4 and its neighboring linker move as one helix (S4-linker helix) and approach the hydrophobic spine in the CCR, a structure located near the cell membrane and also conserved in PTEN. We propose that the hydrophobic spine operates as a hub for translating an electrical signal into a chemical one in VSP.Entities:
Keywords: Anap; hydrophobicity; phosphoinositide; voltage sensor domain; voltage-sensing phosphatase
Mesh:
Substances:
Year: 2022 PMID: 35733115 PMCID: PMC9245683 DOI: 10.1073/pnas.2200364119
Source DB: PubMed Journal: Proc Natl Acad Sci U S A ISSN: 0027-8424 Impact factor: 12.779