| Literature DB >> 35701392 |
Hans H Gorris1, Zdeněk Farka2.
Abstract
A nanocomposite consisting of a cubic EuSe semiconductor material grown on a hexagonal upconversion nanoparticle has overcome the crystal lattice mismatch that typically prevents the epitaxial growth of such heterogeneous nanocrystals. Eu3+ at the interface layer shows its characteristic red emission band both under UV excitation light due to energy transfer from the semiconductor and under NIR excitation light due to energy transfer after photon-upconversion. Data storage and security applications are suggested for this new nanocomposite.Entities:
Year: 2022 PMID: 35701392 PMCID: PMC9197932 DOI: 10.1038/s41377-022-00875-9
Source DB: PubMed Journal: Light Sci Appl ISSN: 2047-7538 Impact factor: 20.257
Fig. 1Upconversion nanocrystal and semiconductor material fused into a single nanocomposite.
a Epitaxial growth of the cubic semiconductor EuSe on hexagonal NaYF4 is facilitated by replacing some surface lanthanide ions in the NaYF4 host matrix by Eu3+, which is then reduced to Eu2+. b Energy transfer steps in the nanocomposite under UV (365 and 394 nm) excitation, which yields Stokes luminescence, and under NIR (980 nm) excitation, which yields anti-Stokes luminescence