| Literature DB >> 35564170 |
Artem Denisov1,2, Anton Bubis1,3, Stanislau Piatrusha1, Nadezhda Titova4, Albert Nasibulin3, Jonathan Becker5, Julian Treu5, Daniel Ruhstorfer5, Gregor Koblmüller5, Evgeny Tikhonov1, Vadim Khrapai1,6.
Abstract
Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them-the charge-mode-being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation branches. Other modes carrying heat or even spin, valley etc. currents populate the branches equally and are charge-neutral, which makes them much harder to control. This noticeable gap in the experimental studies of mesoscopic non-equilibrium superconductivity can be filled by going beyond the conventional DC transport measurements and exploiting spontaneous current fluctuations. Here, we perform such an experiment and investigate the transport of heat in an open hybrid device based on a superconductor proximitized InAs nanowire. Using shot noise measurements, we investigate sub-gap Andreev heat guiding along the superconducting interface and fully characterize it in terms of the thermal conductance on the order of Gth∼e2/h, tunable by a back gate voltage. Understanding of the heat-mode also uncovers its implicit signatures in the non-local charge transport. Our experiments open a direct pathway to probe generic charge-neutral excitations in superconducting hybrids.Entities:
Keywords: Andreev reflection; charge–heat separation; shot noise
Year: 2022 PMID: 35564170 PMCID: PMC9101060 DOI: 10.3390/nano12091461
Source DB: PubMed Journal: Nanomaterials (Basel) ISSN: 2079-4991 Impact factor: 5.719
Figure 1Outline and charge transport data. (a) Scanning electron microscope image of the typical device (false color). InAs NW is equipped with two N terminals (Ti/Au) on the sides and one S-terminal (Al) in the middle. (b) Separation of charge and heat currents at the InAs/Al interface and two noise measurement configurations. The three-terminal device layout allows studying thermal conductance of the proximitized NW region by measuring shot noise in the transmission configuration. Note that in the present experiment, only terminal N2 is connected to the low temperature amplifier, so that switching between the reflection noise and transmission noise is achieved by interchanging the biased and floating N-terminals, see the Supplemental Materials for the wiring scheme. (c) Local differential conductance of NS junction in device NSN-II measured at in different magnetic fields. (d) Non-local differential resistance for two devices plotted at different B and .
Figure 2Reflected and transmitted shot noise. (a) Reflection noise configuration in device NSN-I. Noise spectral density of the biased NS junction as a function of current at two values of . Dotted line is the fit with and charge ; dashed line slope corresponds to and charge equal to e. Green symbols are shifted vertically by to coincide with red ones at zero bias. (b) Transmission noise configuration in device NSN-I. Noise spectral density of the floating NS junction as a function of current at different B, T and (see legend). (c) Reflected shot noise in the reference two-terminal NS device as a function of current at two values of . Dotted line is the fit with ; dashed line slope corresponds to and charge equal to e.
Figure 3Thermal conductance in the device NSN-I. (a) Noise temperature measured in the transmission configuration as a function of bias (solid lines, same data as in the lower part of Figure 2b) along with the model fits (dashed lines). (b,c) (symbols) Sub-gap thermal conductance and interface resistance parameter r plotted as a function of . (lines) Linear response conductances of the left/right () NS junctions.
Figure 4Resistive thermometry and non-local I-Vs in device NSN-II. (a) Linear response resistance of the floating NS junction as a function of bias in the neighboring junction. (b) The same data converted to the effective temperature . (c) The non-local I-V characteristics measured at three representative values. (d) Symmetric component of the non-local I-Vs. The dashed lines are the calculated thermoelectric voltage values for different energy-independent Seebeck coefficients of and (from top to bottom). Upper sketch: setup for resistive thermometry. Lower sketch: setup for non-local I-Vs.