| Literature DB >> 35515464 |
S M Nikam1, A Sharma2, M Rahaman2, A M Teli3, S H Mujawar4, D R T Zahn2, P S Patil1,3, S C Sahoo5, G Salvan2, P B Patil6.
Abstract
The influence of the substrate temperature on pulsed laser deposited (PLD) CoFe2O4 thin films for supercapacitor electrodes was thoroughly investigated. X-ray diffractometry and Raman spectroscopic analyses confirmed the formation of CoFe2O4 phase for films deposited at a substrate temperature of 450 °C. Topography and surface smoothness was measured using atomic force microscopy. We observed that the films deposited at room temperature showed improved electrochemical performance and supercapacitive properties compared to those of films deposited at 450 °C. Specific capacitances of about 777.4 F g-1 and 258.5 F g-1 were obtained for electrodes deposited at RT and 450 °C, respectively, at 0.5 mA cm-2 current density. The CoFe2O4 films deposited at room temperature exhibited an excellent power density (3277 W kg-1) and energy density (17 W h kg-1). Using electrochemical impedance spectroscopy, the series resistance and charge transfer resistance were found to be 1.1 Ω and 1.5 Ω, respectively. The cyclic stability was increased up to 125% after 1500 cycles due to the increasing electroactive surface of CoFe2O4 along with the fast electron and ion transport at the surface. This journal is © The Royal Society of Chemistry.Entities:
Year: 2020 PMID: 35515464 PMCID: PMC9054038 DOI: 10.1039/d0ra02564j
Source DB: PubMed Journal: RSC Adv ISSN: 2046-2069 Impact factor: 4.036
Fig. 1Schematic crystal structure of spinel CoFe2O4 ferrite (Fd3̄m space group) showing Co and Fe cations as grey and gold spheres and O anions as red spheres, respectively.
Fig. 2X-ray diffraction patterns recorded for CoFe2O4 thin films deposited at substrate temperatures of RT (black) and 450 °C (red). The observed peaks in the scan are labelled with corresponding crystal planes of CoFe2O4.
Fig. 3Raman spectra of CoFe2O4 thin films deposited on fused quartz substrate at RT and 450 °C.
Fig. 4Pseudo-3D AFM images of CoFe2O4 thin films deposited at substrate temperatures of RT (a) and 450 °C (b).
Fig. 5Cyclic voltammograms at different scan rates of CoFe2O4 electrodes prepared at (a) RT and (b) 450 °C. (c) CV plots of both electrodes at 10 mV s−1 scan rate for comparison.
Fig. 6Galvanostatic charge–discharge curves for the CoFe2O4 electrodes prepared at RT and 450 °C in 1 M KOH electrolyte at 0.5 mA cm−2 current density.
Comparison of supercapacitive performances of various ferrite electrodes
| Material |
| E.D. (W h kg−1) | P.D. (W kg−1) | Ref. |
|---|---|---|---|---|
| MnCoFe2O4 | 670 | 3.15 | 2250 |
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| CuCoFe2O4 | 397 | 3.53 | 198 |
|
| ZnFe2O4 | 471 | 4.47 | 277 |
|
| MnFe2O4 | 245 | 12.60 | 1207 |
|
| CuFe2O4–graphene | 577 | 15.80 | 1100 |
|
| CoFe2O4 | 429 | 10.68 | — |
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Fig. 7The Nyquist impedance plots for CoFe2O4 electrodes prepared at RT and 450 °C. The inset shows a magnified image of the higher frequency region.
Fig. 8Cyclic stability of CoFe2O4 electrode prepared at RT at 0.5 mA cm−2 current density.