A label-free photoelectrochemical sensor of S, N co-doped graphene quantum dot (S, N-GQD)-modified electrode for ultrasensitive detection of bisphenol A.

S, N co-doped graphene quantum dot (S, N-GQD) materials have been composited via a one-pot pattern and used as photosensitive materials to construct a label-free photoelectrochemical (PEC) sensor. The PEC experiments show an enhanced photocurrent response toward Bisphenol A (BPA) sensing due to the increased charge transfer rate and the enhanced absorption of visible light. Compared with dark conditions, the photocurrent signal (- 0.2 V vs. SCE) is greatly increased because of the effective oxidation of BPA by photogenerated holes and the rapid electron transfer of S, N-GQDs on the PEC sensing platform. Under optimal conditions linear current response to BPA is in two ranges of 0.12-5 µM and 5-40 µM. The limit of detection is 0.04 µM (S/N = 3). The designed sensor has enduring stability and admirable interference immunity. It  provides an alternative approach for BPA determination in real samples with recoveries of 99.3-103% and  RSD of 2.0-4.1%.