| Literature DB >> 35496081 |
Jiayan Deng1, Min Peng1, Zhanyang Gao1, Yi Wang1, Baoshan Wang1, Wenjun Zhou2, Ruichao Peng1, Yunbai Luo1.
Abstract
Sulfur hexafluoride (SF6), which is known as a superior electrically insulating and arc-quenching medium, plays a decisive role in the modern transmission and distribution network of electric energy, especially in high-voltage power networks. However, the ever-increasing usage of SF6 also leads to the continuous escalation of atmospheric SF6 levels, which is considered to be the main cause of the greenhouse effect. To decrease this environmental impact, eco-friendly alternatives to SF6 have been researched for decades. To date, no significant success has been made regarding replacement gases for transmission networks. Some potential alternatives have comparatively lower global warming potential (GWP) but involve technical trade-offs. Thiazyl trifluoride, which has some excellent chemical and electric properties, is a novel substitution candidate for SF6. In this article, an efficient synthetic route starting from sulfur monochloride and followed by ammonization and fluorination was proposed. The structures of the intermediates and the target products were determined by X-ray diffraction (XRD), infrared spectroscopy (IR), and gas chromatography-mass spectrometry (GC-MS). The effects of some determining factors on the yield and purity, including the molar ratio of the reactants, recrystallization conditions and condensation temperature, were also investigated. The results showed that the overall yield of thiazyl trifluoride was approximately 25%, while the purity could be up to 90.6% under optimal conditions. This journal is © The Royal Society of Chemistry.Entities:
Year: 2020 PMID: 35496081 PMCID: PMC9048629 DOI: 10.1039/c9ra09256k
Source DB: PubMed Journal: RSC Adv ISSN: 2046-2069 Impact factor: 4.036
Fig. 1Two-step synthesis of NSF3 starting from sulfur monochloride.
Fig. 2X-ray diffraction spectrum of S4N4.
Fig. 3Configuration of the high-voltage analysis platform.
The parameters of the high-voltage test device
| Rated voltage | Rated capacity | Max output voltage | Protective resistor | Voltage divider |
|---|---|---|---|---|
| 220 V | 10 kVA | 100 kV | 5 kΩ | 1000 : 1 |
The dielectric strength of NSF3 and SF6
| Gas | Pressure | Purity | Breakdown voltage/kV |
|---|---|---|---|
| SF6 | 0.3 | 100 | 35.23 |
| NSF3 | 0.3 | 87 | 45.08 |
Isolated pressure.
The impurities of NSF3 were SF6, CCl3F, and SO2, as determined by GC-MS.
Effects of the various molar ratios of sulfur monochloride to ammonia on the yield of 2a
|
| ||
|---|---|---|
| Entry | S2Cl2 : NH3 | Yield |
| 1 | 1 : 6 | 30.3 |
| 2 | 1 : 8 | 45.6 |
| 3 | 1 : 10 | 58.9 |
| 4 | 1 : 12 | 73.2 |
| 5 | 1 : 14 | 81.8 |
| 6 | 1 : 16 | 83.0 |
| 7 | 1 : 17 | 83.8 |
| 8 | 1 : 18 | 84.3 |
Reaction conditions: S2Cl2 (0.19 mol), CCl4 (100 mL), NH3 at a rate of 1000 mL min−1, at −4 °C for 1 hour.
Isolated yield.
Fig. 4(a) The solubility of S4N4 varies with temperature in three solvents. (b) The solubility of sulfur varies with temperature in three solvents.
Effect of cooling temperature on recrystallization yielda
| Entry | Temperature/°C | Yield (%) |
|---|---|---|
| 1 | 5 | — |
| 2 | 10 | — |
| 3 | 15 | 27.1 |
| 4 | 20 | 38.4 |
| 5 | 25 | 50.4 |
| 6 | 30 | 52.2 |
| 7 | 35 | 48.1 |
Reaction conditions: impurity-containing S4N4 was dissolved by stirring with benzene, and the saturated solution was heated to 80 °C before cooling.
No expected product was obtained.
Fig. 5Pathway for the synthesis of thiazyl trifluoride from tetrasulfur tetranitride.
Effects of the AgF2 : S4N4 molar ratio on the yield of NSF3a
| Entry | Molar rate (AgF2/S4N4) | Reaction time/h | Temperature/°C | Yield |
|---|---|---|---|---|
| 1 | 8 : 1 | 2 | 78 | 21.32 |
| 2 | 10 : 1 | 2 | 78 | 32.32 |
| 3 | 12 : 1 | 2 | 78 | 44.79 |
| 4 | 14 : 1 | 2 | 78 | 53.44 |
| 5 | 16 : 1 | 2 | 78 | 57.38 |
| 6 | 18 : 1 | 2 | 78 | 58.27 |
Reaction conditions: S4N4 (3 mmol), CCl4 (waterless, 30 mL), and AgF2 were added in the specified proportions under stirring.
Isolated yield.
Effects of reaction time on the yield of NSF3a
| Entry | Time | Yield |
|---|---|---|
| 1 | 0.5 | 28.12 |
| 2 | 1 | 35.35 |
| 3 | 1.5 | 43.03 |
| 4 | 2 | 57.15 |
| 5 | 2.5 | 57.54 |
| 6 | 3 | 57.68 |
Reaction conditions: S4N4 (3 mmol), AgF2 (48 mmol), and CCl4 (waterless, 30 mL). The reaction was carried out under stirring at 78 °C.
Timing began after AgF2 was added.
Isolated yield, measured by GC-MS.
Effects of condensing temperature on the purity of NSF3a
| Entry | Condensing temperature/°C | Purity |
|---|---|---|
| 1 | −5 | 49 |
| 2 | −10 | 60 |
| 3 | −15 | 90 |
| 4 | −20 | 82 |
| 5 | −25 | 75 |
Reaction conditions: S4N4 (3 mmol), AgF2 (48 mmol), and CCl4 (waterless, 30 mL). The reaction was carried out under stirring at 78 °C for 2 hours, and the gas mixture was condensed at different temperatures.
GC purity.
Fig. 6Schematic illustration of the radical decomposition of a molecule.
Fig. 7Geometry of molecules after optimization with B3LYP/631G(d,p). (A) Geometry of NSF3 molecules. (B) Geometry of NSF2 after the first step of decomposition (losing a fluorine atom). (C) Geometry of SF3 after the first step of decomposition (losing a nitrogen atom). (D) Geometry of SF2 resulting from the decomposition of SF3.