| Literature DB >> 35495445 |
Suraj Kumar Pathak1,2, Yepeng Xiang3, Manli Huang3, Taian Huang1, Xiaosong Cao1, He Liu1, Guohua Xie3, Chuluo Yang1,3.
Abstract
Tris[1,2,4]triazolo[1,3,5]triazine, a new acceptor based on a fused triazole and triazine moiety, is utilized to construct D3-A star-shaped tristriazolotriazine derivatives, named 3,7,11-tris(4-(10H-phenoxazin-10 yl)phenyl)tris([1,2,4]triazolo)[1,3,5]triazine (TTT-PXZ) and 3,7,11-tris(4-(9,9-dimethylacridin-10(9H)yl)phenyl)tris([1,2,4])triazolo[1,3,5]triazine (TTT-DMAC). Both TTT-PXZ and TTT-DMAC emitters feature TADF activities and AIEE properties. Consequently, solution processed OLEDs based on TTT-PXZ green emitters exhibited good performances, with an external quantum efficiency (EQE) of up to 6.2%. This journal is © The Royal Society of Chemistry.Entities:
Year: 2020 PMID: 35495445 PMCID: PMC9052375 DOI: 10.1039/d0ra01925a
Source DB: PubMed Journal: RSC Adv ISSN: 2046-2069 Impact factor: 4.036
Fig. 1The optimized geometric structures and DFT simulation of ground and excited states of TTT-PXZ and TTT-DMAC. (a) Optimized geometric structures and distribution of HOMO and LUMO, (b) natural transition orbitals (NTOs) of the hole-particle contribution for these two compounds at S1 and T1 excited state.
Scheme 1The synthetic routes for TTT-PXZ and TTT-DMAC.
Thermal, electrochemical and TD-DFT calculation data for TTT-PXZ and TTT-DMAC
| Compound | HOMO/LUMO | HOMO/LUMO | S1 | T1 | Δ |
|
|---|---|---|---|---|---|---|
| TTT-PXZ | −5.38/−2.65 | −4.77/−2.15 | 2.33 | 2.32 | 0.01 | 428 |
| TTT-DMAC | −5.61/−2.66 | −4.97/−1.38 | 2.70 | 2.66 | 0.04 | 241 |
Obtained from cyclic voltammograms in CH3CN solution.
Calculated.
Obtained from TGA measurements.
Photophysical characterization for two emitters of TTT-PXZ and TTT-DMAC
| Compound |
| S1 | T1 | Δ |
|
|
|
|
|
|
|
|---|---|---|---|---|---|---|---|---|---|---|---|
| TTT-PXZ | 522 | 2.71 | 2.64 | 0.07 | 36.2 | 4.2 | 39.5 | 3.5/36.0 | 0.098 | 2.55 | 2.69 |
| TTT-DMAC | 468 | 2.94 | 2.74 | 0.20 | 49.5 | 4.6 | 21.4 | 1.9/19.5 | 0.038 | 1.83 | 2.44 |
Measured in doped CzSi films (5 wt%) at room temperature.
Calculated from the onset of the fluorescence spectra of two emitters doped into CzSi films (5 wt%) at room temperature.
Calculated from the onset of the phosphorescence spectra of two emitters doped into CzSi films (5 wt%) at room temperature.
ΔEST = Sc1 − Td1.
The prompt and delayed fluorescence lifetimes of two emitters doped into CzSi films (5 wt%) at room temperature.
The total PLQYs of two emitters doped into CzSi films (5 wt%) under oxygen free condition at room temperature.
The prompt and delayed PLQY under oxygen free conditions in CzSi host film.
Rate constant of radiative, intersystem crossing and reverse intersystem crossing process in CzSi host film.
Fig. 2(a) UV-vis and fluorescence spectra of TTT-PXZ and TTT-DMAC in 10−5 M toluene solution, (b) in spin coating film.
Fig. 3Transient photoluminescence decay curves of (a) TTT-PXZ, (b) TTT-DMAC in CzSi doping film (5 wt%) under oxygen free condition. Fluorescence spectra at 300 K and phosphorescence spectra at 77 K of (c) TTT-PXZ and (d) TTT-DMAC doped into CzSi films (5 wt%).
Fig. 4(a) The energy level diagrams and (b) chemical structures of the materials used in the devices. (c) External quantum efficiency–current density curves; inset. (d) The EL spectra of devices. (e) Current density versus voltage versus luminance.
Electroluminescence performance data of OLEDs
| Emitter |
| EQE | CEmax | PEmax |
| CIE |
|---|---|---|---|---|---|---|
| TTT-PXZ | 8.7 | 6.2/5.3 | 19.2 | 5.2 | 530 | (0.32, 0.52) |
| TTT-DMAC | 10.6 | 1.9/— | 4.1 | 1.1 | 480 | (0.19, 0.29) |
Voltage in the luminance of 10 cd m2.
Maximum external quantum efficiency (EQE), maximum current efficiency (CE), maximum power efficiency (PE).
External quantum efficiency at 1000 cd m2.
Peak emission wavelength of the EL spectra.
The CIE coordinates.