Literature DB >> 35487891

Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.

Hongliang Chang1,2, Zhetong Liu3,4,5,6, Shenyuan Yang2,7, Yaqi Gao1,2, Jingyuan Shan3,5, Bingyao Liu3,4,5,6, Jingyu Sun5, Zhaolong Chen3,5, Jianchang Yan1,2, Zhiqiang Liu1,2, Junxi Wang1,2, Peng Gao8,9,10,11, Jinmin Li12,13, Zhongfan Liu14,15, Tongbo Wei16,17.   

Abstract

Entities:  

Year:  2022        PMID： 35487891      PMCID： PMC9054817          DOI： 10.1038/s41377-022-00802-y

Source DB:  PubMed          Journal:  Light Sci Appl        ISSN： 2047-7538            Impact factor:   17.782


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Correction to: Light Science & Applications 10.1038/s41377-022-00756-1 published online 07 April 2022 Following publication of this article[1], it is noticed Fig. 6d contained a typo: the unit of x-coordinate should be A, not mA. The correct Fig. 6d is provided in this Correction. The original article has been updated.
  1 in total

1.  Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.

Authors:  Hongliang Chang; Zhetong Liu; Shenyuan Yang; Yaqi Gao; Jingyuan Shan; Bingyao Liu; Jingyu Sun; Zhaolong Chen; Jianchang Yan; Zhiqiang Liu; Junxi Wang; Peng Gao; Jinmin Li; Zhongfan Liu; Tongbo Wei
Journal:  Light Sci Appl       Date:  2022-04-07       Impact factor: 20.257
  1 in total

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