| Literature DB >> 35468289 |
Yu Kang1, Yangkun He1, Darius Pohl2, Bernd Rellinghaus2, Dong Chen1, Marcus Schmidt1, Vicky Süß1, Qingge Mu1, Fan Li3, Qun Yang1, Hedong Chen1, Yufei Ma1, Gudrun Auffermann1, Guowei Li4,5, Claudia Felser1.
Abstract
Transition metal chalcogenides such as CoS2 have been reported as competitive catalysts for oxygen evolution reaction. It has been well confirmed that surface modification is inevitable in such a process, with the formation of different re-constructed oxide layers. However, which oxide species should be responsible for the optimized catalytic efficiencies and the detailed interface structure between the modified layer and precatalyst remain controversial. Here, a topological CoS2 single crystal with a well-defined exposed surface is used as a model catalyst, which makes the direct investigation of the interface structure possible. Cross-sectional transmission electron microscopy of the sample reveals the formation of a 2 nm thickness Co3O4 layer that grows epitaxially on the CoS2 surface. Thick CoO pieces are also observed and are loosely attached to the bulk crystal. The compact Co3O4 interface structure can result in the fast electron transfer from adsorbed O species to the bulk crystal compared with CoO pieces as evidenced by the electrochemical impedance measurements. This leads to the competitive apparent and intrinsic reactivity of the crystal despite the low surface geometric area. These findings are helpful for the understanding of catalytic origins of transition metal chalcogenides and the designing of high-performance catalysts with interface-phase engineering.Entities:
Keywords: cobalt disulfide; cobalt oxide; interface structure; oxygen evolution reaction; topological metal
Year: 2022 PMID: 35468289 PMCID: PMC9073842 DOI: 10.1021/acsami.1c24966
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 10.383
Figure 1(a)Photograph and (b,c) pyrite structure of the CoS2 single crystal. (d) XRD pattern, (e) HRTEM with the corresponding FFT image, and (f) resistivity vs temperature curve of the CoS2 crystal.
Figure 2OER performance of the CoS2 single crystal and reference materials with 90% iR correction. (a) LSV curves with the scanning rate of 5 mV s–1 and (b) Tafel slope (CoS2 was tested at the steady state from 1.40 to 1.66 V at the interval of 0.02 V). (c) Cyclic voltammetry results comparison based on the geometric area and ECSA of the single crystal. The inset is the difference in current density between anodic and cathodic sweeps vs scan rate. (d) Apparent overpotential comparison (left) at 10 mA cm–2 normalized to the geometric surface area and the intrinsic current density comparison (right) at 1.55 V based on ECSA. (e) Stability test at a static current density of 10 mA cm–2. (f) Nyquist plots under different potentials. The inset shows the equivalent circuit for the two semicircles.
Figure 3SEM image of (a) surface pieces on the CoS2 single crystal after OER, (b) one of the pieces after depositing the protective layer for FIB, and (c) cross section of the cut piece after FIB. (d) STEM annular dark-field (ADF) image of the cross-section and (e–g) corresponding EDS elemental mappings. (h) SAED pattern of the cut piece, which was fitted with (111), (200), and (220) reflections of CoO.
Figure 4SEM image of (a) thin oxidation layer on CoS2 surface after OER. (b) High-resolution TEM of the cross section of the surface oxidation layer (c) and the corresponding amplified area in the red square frame. (d) STEM ADF of the cross section and (e–g) corresponding EDS elemental mappings of the marked area in (d). (h) Illustration of the interface of Co3O4 and CoS2 crystal in the TEM.
Figure 5XPS spectra of (a) Co 2p and (b) O 1s. (c) Raman spectra of the CoS2 crystal after the measurements at 1.4, 1.5, and 1.6 V.