| Literature DB >> 35458052 |
Alla I Vorobjova1, Daria I Tishkevich2,3, Elena A Outkina1, Dmitry L Shimanovich1, Ihar U Razanau2, Tatiana I Zubar2,3, Anastasia A Bondaruk2, Ekaterina K Zheleznova1,2, Mengge Dong4, Dalal A Aloraini5, M I Sayyed6,7, Aljawhara H Almuqrin5, Maxim V Silibin8, Sergey V Trukhanov2, Alex V Trukhanov2,3.
Abstract
The paper discusses the formation of Ta2O5 pillars with Ni tips during thin porous anodic alumina through-mask anodization on Si/SiO2 substrates. The tantalum nanopillars were formed through porous masks in electrolytes of phosphoric and oxalic acid. The Ni tips on the Ta2O5 pillars were formed via vacuum evaporation through the porous mask. The morphology, structure, and magnetic properties at 4.2 and 300 K of the Ta2O5 nanopillars with Ni tips have been studied using scanning electron microscopy, X-ray diffraction, and vibrating sample magnetometry. The main mechanism of the formation of the Ta2O5 pillars during through-mask anodization was revealed. The superparamagnetic behavior of the magnetic hysteresis loop of the Ta2O5 nanopillars with Ni tips was observed. Such nanostructures can be used to develop novel functional nanomaterials for magnetic, electronic, biomedical, and optical nano-scale devices.Entities:
Keywords: nanoparticles; nanopillars; nanotips; porous anodic alumina; superparamagnetic behavior
Year: 2022 PMID: 35458052 PMCID: PMC9025906 DOI: 10.3390/nano12081344
Source DB: PubMed Journal: Nanomaterials (Basel) ISSN: 2079-4991 Impact factor: 5.719
The deposition parameters for the tantalum and aluminum thin films.
| Deposition Process Parameters | Tantalum | Aluminum |
|---|---|---|
| Residual gas pressure, Pa | 1.3 × 10−3 | 1.4 × 10−4 |
| Substrate temperature, K | 523 | 423 |
| Accelerating voltage, kV | 8 | 8 |
| Beam current, A | 0.4 | 1.2 |
| Deposition rate, nm·s−1 | 1.0 ± 0.2 | 5.0 ± 0.5 |
| Thickness, nm | 450 ± 50 | (1000–2000) ± 50 |
Parameters of the TPAA samples and their preparation procedures.
| Sample Type | Sample No. | Electrolyte | Voltage, | Voltage, UTa, V | Pillar (Pore) Diameter, | Interpore | Pillar Height, | Pillar Density, |
|---|---|---|---|---|---|---|---|---|
| type I | 1 | C2H2O4 | 40 | 40 | 40 ± 5 | 100 ± 5 | 150 ± 10 | 10 × 109 |
| 2 | 70 | 40 ± 5 | 100 ± 5 | 160 ± 10 | 10 × 109 | |||
| type II | 3 | H3PO4 | 80 | 80 | 100 ± 5 | 200 ± 5 | 180 ± 10 | 3 × 109 |
| 4 | 90 | 100 ± 5 | 210 ± 5 | 220 ± 10 | 2 × 109 |
Figure 1Schematic representation of possible shadowing effects of the Ni coating deposited onto a thin porous anodic film. The thickness of the Ni coating increases and the ratio of the pore diameter to the oxide thickness decreases from (A–D) [50].
Figure 2Schematic diagram of the main steps for nanopillars forming from Al/Ta metal sputter-deposited layers on a Si substrate: (A) porous anodizing of the Al film to a certain depth; (B) porous anodization of the Al film to Ta film; (C) anodization of a Ta layer at the Al anodizing voltage (UAl); (D) formation of Ta2O5 pillars at Ta anodizing voltage (UTa).
Figure 3CVA curves of the simultaneous anodic treatment of the two-layer thin-film composition of Al (1000 nm) on Ta (400 nm) for type I samples: 1—sample No. 1; 2—sample No. 2; 3—Al only (1000 nm).
Figure 4CVA curves of the simultaneous anodic treatment of the two-layer thin-film composition of Al (100 nm) on Ta (400 nm) for type II samples: 1—sample No. 3; 2—Al only (1000 nm).
Figure 5Surface and cross-section SEM images and size histograms for the Ta2O5 pillars after the Al2O3 selective etching: (A,B)—sample 4 of type II; (C,D)—sample 3 of type II; (E–H)—sample 1 of type I.
Figure 6Cross-section SEM images of sample 3 (Si/SiO2/Ta/Ta2O5/TPAA/Ni) after the first stage of double-layer Al/Ta composition anodization and Ni deposition.
Figure 7XRD spectrum of the experimental sample of the Ta/Ta2O5 pillars with Ni tips.
Results of the X-ray structural analysis of the Ta/Ta2O5/Ni experimental samples. The values in parentheses in the 2θ column are the corresponding angles from the JCPDS database.
| Material | Crystallographic Direction | 2θ, deg. | I, | Coherence Region Size L, nm |
|---|---|---|---|---|
| β-Ta | (002) | 36.4 (35.61) | ||
| α-Ta | (110) | 38.37 (38.4) | 100 | - |
| Ni | (111) face-centered cubic | 44.15 (44.51) | 32 | 13 |
| NiO | (111) | 37.8 (38.33) | - | - |
Figure 8Comparison of the hysteresis loops for two samples of Ta2O5 pillars with Ni tips at different temperatures: (A)—sample 2 (type I), (B)—sample 3 (type II).
Figure 9Comparison of the hysteresis loops for two samples of the Ta2O5 pillars with Ni tips at 300 K.
The results of the magnetic measurements for the samples of the Ta2O5 pillars with Ni tips.
| Type | Sample | Temperature, K | Hc, kOe | Mr, emu/g | Ms, emu/g | Mr/Ms |
|---|---|---|---|---|---|---|
| I | 2 | 4.2 | 511 | 0.007 | 0.127 | 0.06 |
| 300 | - | - | - | - | ||
| II | 3 | 4.2 | 525 | 0.007 | 0.087 | 0.08 |
| 300 | - | - | - | - |
Figure 10SEM image of the test sample with Ta2O5/Ni pillars after submersion in a diluted aqueous solution of phosphoric acid (sample 2, type I).