Kanimozhi Balakrishnan1, Vasu Veerapandy1, Helmer Fjellvåg2, Ponniah Vajeeston2. 1. Department of Computational Physics, School of Physics, Madurai Kamaraj University, Palkalai Nagar, Madurai 625021, Tamil Nadu, India. 2. Center for Materials Science and Nanotechnology, Department of Chemistry, University of Oslo, Oslo 0371, Norway.
Abstract
Tin dioxide (SnO2) is one of the transparent conductive oxides that has aroused the interest of researchers due to its wide range of applications. SnO2 exists in a variety of polymorphs with different atomic structures and Sn-O connectivity. However, there are no comprehensive studies on the physical and chemical properties of SnO2 polymorphs. For the first time, we investigated the structural stability and ground-state properties of 20 polymorphs in the sequence of experimental structures determined by density functional theory. We used a systematic analytical method to determine the viability of polymorphs for practical applications. Among the structurally stable polymorphs, Fm3̅m, I41/amd, and Pnma-II are dynamically unstable. As far as we know, no previous research has investigated the electronic properties of SnO2 polymorphs from the hybrid functional of Heyd, Scuseria, and Erhzerhof (HSE06) except P42/mnm, with calculated band gap values ranging from 2.15 to 3.35 eV. The dielectric properties of the polymorphs have been reported, suggesting that SnO2 polymorphs are also suitable for energy storage applications. The bonding nature of the global minimum rutile structure is analyzed from charge density, charge transfer, and electron localization function. The Imma-SnO2 polymorph is mechanically unstable, while the remaining polymorphs met all stability criteria. Further, we calculated Raman and IR spectra, elastic moduli, anisotropic factors, and the direction-dependent elastic moduli of stable polymorphs. Although there are many polymorphic forms of SnO2, rutile is a promising candidate for many applications; however, we investigated the feasibility of the remaining polymorphs for practical applications.
Tin dioxide (SnO2) is one of the transparent conductive oxides that has aroused the interest of researchers due to its wide range of applications. SnO2 exists in a variety of polymorphs with different atomic structures and Sn-O connectivity. However, there are no comprehensive studies on the physical and chemical properties of SnO2 polymorphs. For the first time, we investigated the structural stability and ground-state properties of 20 polymorphs in the sequence of experimental structures determined by density functional theory. We used a systematic analytical method to determine the viability of polymorphs for practical applications. Among the structurally stable polymorphs, Fm3̅m, I41/amd, and Pnma-II are dynamically unstable. As far as we know, no previous research has investigated the electronic properties of SnO2 polymorphs from the hybrid functional of Heyd, Scuseria, and Erhzerhof (HSE06) except P42/mnm, with calculated band gap values ranging from 2.15 to 3.35 eV. The dielectric properties of the polymorphs have been reported, suggesting that SnO2 polymorphs are also suitable for energy storage applications. The bonding nature of the global minimum rutile structure is analyzed from charge density, charge transfer, and electron localization function. The Imma-SnO2 polymorph is mechanically unstable, while the remaining polymorphs met all stability criteria. Further, we calculated Raman and IR spectra, elastic moduli, anisotropic factors, and the direction-dependent elastic moduli of stable polymorphs. Although there are many polymorphic forms of SnO2, rutile is a promising candidate for many applications; however, we investigated the feasibility of the remaining polymorphs for practical applications.
Although
oxides are insulators, some metal oxides like simple binary
oxides, including ZnO2, In2O3, SnO2, and so forth, and complex oxides, like Zn–Sn–O
and In–Sn–O, actually have properties of semiconductors
as well as metals. SnO2 is a well-studied wide band gap
semiconductor because of its excellent physical and chemical properties.
SnO2 has received a lot of attention as a potential substitute
for conventional titanium dioxide (TiO2) in dye-sensitized
solar cells (DSSCs) because of its wide band gap, electron mobility,
and excellent optical and chemical stability.[1] Apart from this, SnO2 is a non-toxic, inexpensive, and
high surface-to-volume ratio material.[2] Currently, SnO2 is recognized for its properties as a
most popular gas sensor[3−5] and, most recently, in catalysis as a thin-film transistor,[6] as well as a potential candidate for electrode
materials for batteries.[7] In the photovoltaic
industry, SnO2 is a highly promising material to be used
as a transparent conductive oxide. F-doped SnO2 has the
highest work function compared to other transparent conductive oxide
materials. It has the best contact with Si and forms a highly stable
nanocrystal electron transport layer (ETL) in devices such as organic
light-emitting diodes (OLEDs) and perovskite solar cells.[8,9]The United States Geological Survey (USGS) reports that 31,000
tons of tin were produced in 2019, with China accounting for 27% of
the total.[10] Tin-based materials, especially
SnO2, have attracted a lot of attention in the field of
sensors because they have the most chemically and thermally stable
oxidation states and are amazingly sensitive to various gas species.
Even though SnO2 has been studied for a variety of applications,
37% of research has focused on its gas sensing property, with mixed
oxides and TiO2 in the second and third places, respectively.[11] Most of the research groups are concerned with
the synthesis, characterization, and application of SnO2 as a gas sensor. According to a review of the literature, modified
nanostructured SnO2 is used as an electrode for chemical
sensors.[12] Wang et al. demonstrated that
when carbon derivatives are combined with SnO2 nanomaterials,
their sensing performance improves. When compared to reduced graphene
oxide (rGO), they demonstrated that the rGO/SnO2 composite
is the greatest sensor of NO2.[13] Therefore, SnO2 is an excellent material as a gas sensor
for flammable and dangerous gases, such as hydrogen, NO2, acetone, CO, H2S, and methane.[14−16]Many
applications of inorganic crystals are derived from the crystal
structure. SnO2 exists in a variety of polymorphic forms
with varying utility. Experiments show that the SnO2 crystal
lattice is highly pressure sensitive, implying that phase transition
occurs.[17] The phase transition of SnO2 follows the trend of phase transition of some other dioxides,
such as SiO2, MnO2, and RuO2. One
of the most common SnO2 polymorphs is rutile.[18] The majority of the experimental work has focused
on the rutile phase because it is a naturally occurring form of SnO2.[19−21] Recent developments in crystallographic techniques
under high pressure have made it possible to investigate pressure-induced
phase transitions. The pressure-dependent phase transition of SnO2 has been studied experimentally by J. Haines et al. However,
a fundamental understanding of phase transition has been reported.[17] The rutile polymorph of SnO2 underwent
a phase transition to a CaCl2 polymorph at 11.8 GPa under
hydrostatic conditions; the next transition was observed for the α-PbO2 polymorph beginning at above 12 GPa. It was also found that
above 21 GPa, both the α-PbO2 and CaCl2 polymorphs transformed into a modified fluorite polymorph. Similarly,
Erdem et al. theoretically investigated the transition pressures and
phase sequences of SnO2 polymorphs.[22] The authors discussed the transition pressures of the phases
in the structural sequences of P42/mnm–Pnnm–Pbcn–Pa3̅–Pbca–Pnma with pressures of 7.59, 11.50, 18.70, 25.69, 32.71,
and 19.70 GPa, respectively. The authors also determined the mechanical
properties of all polymorphs at different pressures, such as 0, 5,
10, 15, and 18 GPa. The authors concluded that as the pressure increases,
the elastic stiffness constant for all polymorphs increases.[22] Jiang et al. studied that the room-temperature
phase transition of rutile-to-pyrite type occurs slowly around 18
GPa. This finding contradicts the findings of Ono et al. who found
that, at 300 K, no rutile-pyrite type transformation occurred.[23,24] This occurs due to the phase transition at room temperature, but
it is rectified at high temperatures. There are several DFT studies
available on SnO2, which are comprehensively reported by
Das et al.[25] In addition, there are many
DFT works that have been carried out on SnO2.[26−30]Further, Erdem et al.[31] carried
out
a theoretical study of the electronic structure and elastic and thermal
properties on seven known polymorphs of SnO2. However,
in-depth studies on theoretical analysis of physical and chemical
properties of SnO2 polymorphs are still lacking. In this
paper, we suggested that 20 polymorphs of SnO2 and DFT
calculations were used to perform an in-depth theoretical analysis
of their properties for the first time. We verified the structural,
dynamical, and mechanical stability of the involved polymorphs. The
Raman and infrared spectra of SnO2 polymorphs were theoretically
investigated for the first time. This paper presents an overview of
the possible metastable phases of SnO2 and their stability
in comparison to the reported stable experimental polymorphs and also
analyzes their mechanical and dynamical stability.
Results and Discussion
Structural Properties
SnO2 exists in a number of polymorphic forms that have
various utilities.
Here in this study, we have investigated the relative stability of
20 polymorphs of SnO2, which are as follows: (the number
of formula units, as well as the Materials Project ID, are given in
parenthesis) P42/mnm (2,
856), Pa3̅ (12, 697), Pbcn-I (12, 12978), Fm3̅m (4, 12979), Pnnm (2, 41011), Pbcn-II (12, 555487), Pbca (8, 560417), Pnma-I (4, 562610), I41/amd (4, 755071), Imma (8, 1041584), P63/mmc (6,1041584), R3m-I (12, 1044721), Cmcm (12, 1047381), Fd-3m (12, 1118394), P3m1-I (36, 5236), Cm (48, 5316), Pnma-II (24, 5659), P3m1-II (36, 9896), R3m-II (3, 11686), and I4/m (8, 15363). Only 11 low-energy SnO2 polymorphs were considered for further analysis, which are as follows: Pa3̅ (4, 697), Fm3̅m (4, 12979), I41/amd (4, 755071), P42/mnm (2, 856), I4/m (8, 15363), Imma (8, 1041584), Pnnm (2, 41011), Pbcn (12, 555487), Pbca (8, 560417), Pnma-I (4, 562610), and Pnma-II (8, 5659).
The crystal structures of these 11 polymorphs are given in Figure . Other polymorphs
were excluded from this study because their energy volume curves are
presented above the range of 1 eV from the minimum energy polymorph,
as shown in Figure .
Figure 1
Optimized crystal structures of 11 polymorphs of SnO2,
O atoms are in red color and Sn atoms are in gray color. (a) Pa3̅, (b) Fm3̅m, (c) I41/amd, (d) P42/mnm (e) I4/m, (f) Imma, (g) Pnnm, (h) Pbcn, (i) Pbca, (j) Pnma-I (k), and Pnma-II are the low-energy
polymorphs that lie within 1 eV.
Figure 2
Calculated
total energy as a function of the volume of different
polymorphs of SnO2. (a) Total energy vs equilibrium volume
of considered 20 polymorphs and (b) total energy as a function of
volume for 11 low-energy polymorphs. All the energy volumes are normalized
to one formula unit (f.u).
Optimized crystal structures of 11 polymorphs of SnO2,
O atoms are in red color and Sn atoms are in gray color. (a) Pa3̅, (b) Fm3̅m, (c) I41/amd, (d) P42/mnm (e) I4/m, (f) Imma, (g) Pnnm, (h) Pbcn, (i) Pbca, (j) Pnma-I (k), and Pnma-II are the low-energy
polymorphs that lie within 1 eV.Calculated
total energy as a function of the volume of different
polymorphs of SnO2. (a) Total energy vs equilibrium volume
of considered 20 polymorphs and (b) total energy as a function of
volume for 11 low-energy polymorphs. All the energy volumes are normalized
to one formula unit (f.u).Pa3̅ and Fm3̅m polymorphs have a cubic structure, and I41/amd, P42/mnm, I4/m, and Imma are tetragonal, while the remaining polymorphs are orthorhombic.
The structures of different polymorphs contain different SnO2 formula units, with the most studied experimental polymorph being
rutile (P42/mnm) containing
two formula units, and Pbcn being the largest containing
12 formula units. The structural optimization was performed on the
structures under zero pressure and zero kelvin, and the optimized
structures were then used in subsequent calculations. 4 of the 11
phases were reported for the first time here, so we need to determine
their relative stability with the global minimum polymorph by calculating
total energy as a function of volume for 11 polymorphs. The lowest
energy configuration is shared by three polymorphs: Imma, P42/mnm, and Pnnm. It is important to highlight the fact that even though
their E-V curves are similar to these three polymorphs, there is the
smallest energy difference between them: 0.3 meV/f.u for P42/mnm to Pnnm and 0.4
meV/f.u for P42/mnm to Imma. As a result, by varying the temperature or pressure,
one polymorph can be easily transformed into another. They also differ
in b/a values due to their different
lattice structures. The E–V curve for the P42/mnm polymorph is the lowest among
these three lowest energy shared polymorphs. With only minor distortions
in the structures Pnnm, P42/mnm, and Imma exhibit similar
properties in our result. The energy minima of the three newly identified
polymorphs, I41/amd, I4/m, and Pnma-II, were
observed in the expanded lattice when compared to P42/mnm, indicating that we can experimentally
stabilize these polymorphs. In general, the structures in the expanded
lattice are loosely packed crystal structures that are porous in nature.
In SnO2, I41/amd and I4/m structures are much porous
than the low-energy structure, as shown in Figure . Moreover, these three polymorphs may form
experimentally in the nanophase. I41/amd, I4/m, Pbcn, and Pbca are metastable polymorphs that were converted
to low-energy polymorphs under certain experimental conditions such
as pressure, temperature, and other experimental data. The equilibrium
volume of the polymorphs varies from 32.8 to 46.8 Å3, whereas the energy of all 11 polymorphs are in an energy range
of 0.98 eV. Also, nine polymorphs were above 100 meV higher than the
low-energy configuration; hence, we omit 9 out of 20 polymorphs. In
addition, our results are in accordance with the stated values of
researchers that have previously found SnO2 polymorphs
with rutile and CaCl2.[31] The
calculated lattice parameters and equilibrium volumes for various
polymorphs are shown in Table . The calculated lattice constants of the rutile-SnO2 are a = b = 4.83 Å and c = 3.24 Å, and this seems to be in agreement with
experimental and other theoretical reports.[17,24,30−32] The calculated lattice
constants of the polymorphs differ from 0.3 to 2% from the experimental
and other theoretical findings.[25,32−38] Especially, the lattice constants were compared with the high-pressure
phase transition of the polymorphs.[32,35] The third-order
Birch–Murnaghan equation of state (BM-EOS) fits with the calculated
energy as a function of volume data to obtain the bulk modulus of
the polymorphs, as well as its first-order pressure derivatives, also
shown in Table . The
bulk modulus values were varying from 171 to 279 GPa and minimum in Pnma-I and maximum in I4/m; hence, the polymorphs of SnO2 are comparable with the
modulus of cast iron. The bulk modulus calculated from B-M fit is
consistent with the bulk modulus calculated from Voigt–Reuss–Hill
approximation.
Figure 3
Optimized low-energy crystal structure of P42/mnm (a) view along [001] and structures
at the expanded lattice for I41/amd (b) view along [100] and I4/m (c). To have a better view ability on the porous nature
of the involved structures, the view angle is projected in different
directions.
Table 1
Calculated Equilibrium
Lattice Constants a, b, and c (Å),
Equilibrium Volume V0 (Å3), Bulk Modulus B0 (GPa), and Its Pressure
Derivative B0′, Band Gap (Eg) eV, and Band Type of SnO2 Polymorphs
polymorphs
a (Å)
b (Å)
c (Å)
V0 (Å3)
B0 (GPa)
B0′
band type
Eg (eV)
Pa3̅ (205) pyrite
4.99
139.05
229
3.1
indirect
3.35
4.90[17]
226[17]
3[17]
0.84[17]
5.116[32]
216[32]
4.7[32]
3.45[35]
Fm3̅m (225) fluorite
5.06
137.05
207
3.5
direct
1.83
4.99[35]
288[35]
6[35]
5.08[32]
204[32]
4.5[32]
I41/amd (141)
3.98
3.98
10.19
172.53
121
2.8
indirect
3.38
P42/mnm (136) rutile
4.83
4.83
3.24
76.30
190
3.3
direct
2.30
4.77[32]
3.212[32]
192[32]
4.8[32]
2.58[37]
4.72[35]
3.19[35]
204[35]
2.72[37]
3.49[38]
0.83[32]
I4/m (87)
10.75
10.75
3.22
396.68
279
2.7
direct
2.41
Imma (74)
6.48
6.83
6.83
302.64
201
3.3
direct
2.37
Pnnm (58) CaCl2
4.82
3.24
76.27
191
3.3
direct
2.34
4.827[17]
3.236[17]
173[17]
4[17]
0.89[22]
4.808[32]
3.226[32]
195[32]
4.6[32]
3.66[35]
Pbcn (60) PbO2
4.786
5.840
16.12
452.59
185
3.3
direct
2.31
1.16[17]
3.76[35]
Pbca (61) ZrO2
9.35
4.95
4.74
276.78
178
3.5
indirect
2.31
9.97[35]
5.11[35]
5.02[35]
4[35]
0.84[22]
Pnma-I (62)
cotunnite
5.21
3.20
6.21
155.72
249
4.8
indirect
2.15
5.33[35]
3.38[35]
6.67[35]
229[35]
4
0.52[35]
Pnma-II (62) cotunnite
9.30
3.22
11.38
346.19
171
0.6
indirect
2.72
Optimized low-energy crystal structure of P42/mnm (a) view along [001] and structures
at the expanded lattice for I41/amd (b) view along [100] and I4/m (c). To have a better view ability on the porous nature
of the involved structures, the view angle is projected in different
directions.
Dynamical Properties
PHONOPY is a
computational pre-/post-processing tool for the calculation of lattice
dynamic and vibrational properties of solids from first-principles.[39] SnO2 is a polar crystal that exhibits
the splitting (LO/TO splitting) of infrared (IR) active modes into
longitudinal and transverse modes at Γ due to dipole moments.
Here, we have used the frozen phonon method to find the lattice dynamic
properties of the polymorphs at the equilibrium volumes. Figure depicts the phonon
dispersion curve for minimum energy polymorphs, including an unstable Fm3̅m; the remaining polymorphs are
shown in Figure S1 in the Supporting Information.
The results show that the cubic fluorite (Fm3̅m) structure has imaginary phonon frequencies, indicating
that it is a dynamically unstable phase; the imaginary frequencies
were accrued at Γ. As well as Pnma-II and I41/amd also have an imaginary
frequency at X, which seems to be dynamically unstable and may not
form under any experimental conditions. Our results of phonon frequencies
of the rutile, CaCl2, PbO2, pyrite, ZrO2, and cotunnite structures are in good agreement with those
calculated by Erdem et al. as well as other theoretical and experimental
findings.[31,40−42] The rest of the polymorphs
are reported here for the first time. In the orthorhombic Pbca, and Pnma-I SnO2 structures,
there is no separation between the acoustic and optical branches.
The acoustic branches of the polymorphs Pa3̅, P42/mnm, I4/m, Imma, Pnnm, and Pbcn, lie in the range 0–11 THz, while optical branches
are from 13 to 26 THz. The separation of the branch acoustics and
optics is well suited for photovoltaic purposes. From the phonon density
of states, it is clear that the mode of vibration of the polymorphs
varies due to the crystal structure. The vibration of acoustical branches
is mainly due to the Sn atom with a small contribution of the oxygen
atom, which is observed from the phonon density of states. The optical
branches arise from the oxygen atom hybridized with the Sn atom. In
all the low-energy configurations, the phonon dispersion curves are
well separated; hence, all these phases might have less thermal recombination
loss. Among the 11 low-energy polymorphs, only 8 polymorphs are both
structurally and dynamically stable, so in the following sections,
we considered only the stable polymorphs.
Figure 4
At high symmetric points,
the calculated phonon dispersion with
phonon density of states of the low-energy polymorphs (a) P42/mnm, (b) Pnnm, and (c) Imma with a dynamically unstable polymorph
of SnO2 and (d) Fm3̅m.
At high symmetric points,
the calculated phonon dispersion with
phonon density of states of the low-energy polymorphs (a) P42/mnm, (b) Pnnm, and (c) Imma with a dynamically unstable polymorph
of SnO2 and (d) Fm3̅m.
Electronic
Properties
In this section,
we present the energy band structure and the electron density of states
(DOS) of the polymorphs at equilibrium volume using the first-principles
augmented plane wave (APW) method within the density functional theory.
The band structures of the eight stable polymorphs are calculated
for the highly symmetric points across the first Brillouin zone at
zero pressure. Figure depicts the band structures of the minimum energy polymorphs, as
well as the highest and lowest band gap polymorphs, and the remaining
polymorphs can be found in Figure S2. While
analyzing the electronic properties, the SnO2 polymorphs
show a semiconducting behavior, the corresponding band gap values
are calculated by HSE06, and the type of band is given in Table . However, the polymorphs
of SnO2 all fall into the category of wide band gap semiconductors,
indicating that the material will be used in photovoltaics, photocatalysis,
and a variety of other applications. When comparing the band structures
of eight stable polymorphs, Pa3̅ (X−Γ), Pbca (Y−Γ), and pnma-I–SnO2 possess an indirect band gap, while the rest have a direct
band gap. The direct band gap of the phases is observed at the high
symmetric Γ-point.
Figure 5
Calculated band structure at the HSE06 level
for the low-energy
polymorphs of SnO2, (a) P42/mnm, (b) Pnnm, (c) Imma, as well as the low- and high-band gap polymorphs (d) Pnma-I, and (e) Pa3̅, the remaining phases are given
in Figure S2 of Supporting Information.
Calculated band structure at the HSE06 level
for the low-energy
polymorphs of SnO2, (a) P42/mnm, (b) Pnnm, (c) Imma, as well as the low- and high-band gap polymorphs (d) Pnma-I, and (e) Pa3̅, the remaining phases are given
in Figure S2 of Supporting Information.The band gap of the polymorphs Pnma-I and Pa3̅ are at the two extremes, the band
gap of Pnma-I is 2.15 and of Pa3̅
is 3.35
eV due to different crystal structures. Interestingly, by using the
hybrid functional, the calculated band gap agrees well with the experimental
results.[34,43] Tingting et al. reported the band gap of
rutile-structured SnO2 at different functionals, particularly
at B3LYP and PBE0, which vary from 10 to 14% with our findings.[37] Further, Gilani et al. investigated the band
gap of rutile-SnO2 from the CASTEP code, which is 3.494
eV for the HSE06 functional.[38] We also
examine the band gap quantitatively, and it improved by 63% when we
employed HSE instead of GGA with the reported values for the rutile
polymorph.[22] Other polymorphs are reported
for the first time with a HSE06 functional. Thus, the usual problem
of band gap discrepancy is overcome by using the hybrid functional.
The band gap of the tetragonal and orthorhombic structures is almost
similar; it is approximately 2.3 eV. The population of bands in all
the cases, near the Fermi level (valence band maximum—VBM)
between 0 and −8 eV is mainly due to O-2p-stated hybridizing
with the Sn-5s states. The conduction band is dominated by 5s and
2p orbitals of Sn, with a small contribution from the O-2s orbital,
as shown in Figure . Among the structurally stable polymorphs, some have a dense band
population due to a higher population of free elections. For stable
polymorphs, the bands were well separated especially at the gamma
point, as observed for Pa3̅, P42/mnm, Pnnm polymorphs.
Figure 6
Partial
DOS (PDOS) of rutile–SnO2 and O–P
orbitals tends to produce the prominent peak in the valance band maximum,
while the Sn-s orbital provides the maximum along the conduction band
minimum.
Partial
DOS (PDOS) of rutile–SnO2 and O–P
orbitals tends to produce the prominent peak in the valance band maximum,
while the Sn-s orbital provides the maximum along the conduction band
minimum.
Dielectric
Properties
Born Effective Charge Analysis
Polarization P induced on the atom by a lattice distortion is related
to the Born effective charge (BEC) tensor Z*. In
this work, the Z* of eight polymorphs involved is
calculated and listed in Table S1 of Supporting
Information. The interaction of lattice displacements and electrostatic
fields is described by BEC. BEC predicts long-range Coulomb interactions
for the splitting of LO and TO in phonons. Because of the structural
symmetry, the charge tensor of each ion has anisotropic diagonal elements
and finite off-diagonal elements. The formal valances of Sn and O
ions are +4 and −2, respectively, and the charge tensors for
pure ionic bonds are greater than the allowed values. Because the
effective charge for a specific ion varies significantly, BEC is found
to be quite sensitive to the ion position and crystal symmetry. We
can see isotropy in the BEC of cubic structures (Z* = Z* = Z*) because all the diagonal elements have roughly the same value.
However, for the tetragonal structures (Z* = Z*; Z*), two different
values of BEC were Z* > Z* observed
in
the diagonal tensors, indicated by charge anisotropy. For orthorhombic
structures, the degree of anisotropy increases, and all three diagonal
tensors differ. The effective charge of Sn scatter ranged from 3.79
to 4.26, and the effective charge of the O atom ranged from −1.93
to −2.44, indicating that the charges changed as the Sn–O
bond length changed. The effective charge differs from the principle
value along the c-axis by only 6% for Sn atoms and
7% for O atoms. The computed BEC values differ from 0.2 to 3% with
the reported values for the rutile SnO2 and other polymorphs
of SnO2 reported for the first time.[31,42]
Dielectric Constant
Dielectric
materials play an important role in many electronic devices, including
capacitors, computer memory (DRAM), sensors, and communication circuits.
The calculated static dielectric constants are well matched with the
experimental results for the naturally occurring SnO2 as
9.81 along the a-axis and 7.97 along the c-axis,[20,42,44−46] as given in Table S1 in
the Supporting Information. The dielectric constants of cubic structures
are greater than the rest of the structures; therefore, the ionic
polarizability is much greater for this phase. The material with a
high dielectric constant can be used as a good capacitor; hence, the
dielectric constant of SnO2 is also related to the dielectric
constant of capacitors.[47] As a result,
SnO2 polymorphs could be used in storage applications.
The anisotropy trend of the polymorph dielectric constants follows
the anisotropy trend of the BEC.
Bonding
Nature
To gain a better understanding
of bonding interactions, the calculated valence-charge-density distribution
was used. All the polymorphs considered in this study are having almost
a similar feature; hence, we have displayed only the charge density,
charge transfer, and ELF plots of the lowest energy rutile polymorph
is given in Figure , and it can be seen that the maximum charge density is accumulated
at the O atom’s sites. There is no charge transfer between
the cations indicated by blue. The fact that electrons are strongly
localized on anions demonstrates the ionic nature of bonding in the
rutile phase. All the stable polymorphs involved are ionic not just
the rutile. In a practical system, the charge density is different
because valance electrons take part in the calculations and leave
out core electrons. When comparing this analysis with the experimental
results, the d electron population of Sn ions also takes part in the
bonding; hence, there are non-spherical valance electrons distributed
around the cation.[48] The bluish-green on
the Sn site indicates that meager charges have been associated with
Sn. Because the d-orbital is a core electron in the cation, the population
becomes zero, and electrons from the 5s and 2p orbitals are transferred
from Sn to the nearest O atom. We observed a quantitative charge transfer
between the ions in Figure b, with 95% of electron transfer from Sn to O ion and only
5% from bonding between these, indicating that a dominant ionic character,
which is similar to the charge density plot. The ELF confirms the
charge localization only on anions, with electrons being depleted
from the Sn site and accumulating on the O site. The accumulation
of ions on the O site indicates the system’s ionic nature.
A similar pattern has been observed in all the stable polymorphs of
SnO2. The calculated bonding nature of rutile SnO2 in comparison to the reported values[49,50] also is in
good agreement with the PDOS analysis.
Figure 7
Calculated charge density
(a), charge transfer (b), and electron
localization function (c) plots for SnO2 in the rutile
structure.
Calculated charge density
(a), charge transfer (b), and electron
localization function (c) plots for SnO2 in the rutile
structure.
Mechanical
Properties
Mechanical Stability
So far, most
theoretical studies are concerned with the mechanical and thermal
properties of the rutile SnO2 alone. Only a very few reports
are available on their mechanical properties. For example, Das et
al.[51] investigated the elastic properties
of four polymorphs of SnO2 under different pressures and
demonstrated the directional dependence of Young’s modulus
of the four polymorphs. We determined the elastic constant by applying
strain to a crystal and measured the associated stress in order to
understand the mechanical stability of the identified stable polymorphs.
In general, the elastic properties of a material are associated with
the arrangement and strength of bonds between the atoms that make
up the material. Hooke’s law related the elastic constants
in a bulk solid with the linear response of stress tensor σ
to external strain ε applied on a system. These elastic tensor
components are calculated from the derivatives of energy as a function
of the lattice strain asTable gives the
three independent elastic constants, C11, C12, and C14 calculated for the two cubic structures in
their equilibrium lattice parameters. For the tetragonal system, there
are six independent elastic constants C11, C12, C13, C33, C44, and C66, which should satisfy Born’s
stability criteria.[52,53] Whereas for the orthorhombic
structures, there are nine elastic tensors C11, C12, C13, C22, C23, C33, C44, C55, and C66. Based on the Voigt–Reuss–Hill approximation,[54−56] mechanical parameters, such as bulk modulus B,
sheared modulus G, Young’s modulus E, and Poisson’s ratio ν, are determined. From
the results of the elastic constants, Young’s modulus (E) and Poisson’s ratio (ν) of the polycrystalline
materials are expressed as follows.
Table 2
Elastic Constants, Shear Modulus (G), Young’s Modulus (E), Bulk Modulus
(B), and Poisson’s Ratio (σ) of SnO2 Polymorphsa
S. No
polymorphs
C11
C12
C13
C22
C23
C33
C44
C55
C66
σ
Au
E (GPa)
G (GPa)
B (GPa)
1
Pa3̅
417
209
134
0.31
0.08
317
121
279
327[22]
135[22]
104[22]
2
P42/mnm
207
140
126
373
84
177
0.29
1.65
215
84
170
199[22]
131[22]
126[22]
389[22]
86[22]
180[22]
0.27[22]
211[22]
81[22]
167[22]
3
I4/m
101
90
62
270
55
25
0.36
9.77
80
30
96
4
Imma
374
126
126
351
–3
351
84
34
84
0.29
1.72
216
84
170
5
Pnnm
209
142
127
210
128
376
84
85
178
0.29
1.72
216
84
172
215[22]
147
133
215
134
388
86
86
181
6
Pbcn
221
152
138
275
117
327
107
83
129
0.30
1.80
222
86
181
241[22]
154[22]
121[22]
256[22]
83[22]
257[22]
74[22]
92[22]
111[22]
7
Pbca
325
88.3
88.4
314.1
127.7
333.9
78.2
68.6
55.0
0.32
0.33
365
138
347
329[22]
164[22]
135[22]
353[22]
127[22]
346[22]
61[22]
82[22]
75[22]
8
Pnma-I
587
307
297
489
261
520
112
87
196
0.39
0.32
333
123
397
The modulus is in GPa.
The modulus is in GPa.The computed elastic constants are displayed in Table . All of the 11 polymorphs that
satisfy structural stability and 8 polymorphs that met the dynamical
stability; hence, we studied the mechanical stability criteria of
the 8 SnO2 polymorphs from the elastic constants. Imma is a mechanically unstable phase, which is observed
from the Born’s stability criteria. In total, seven polymorphs
met all of the stability criteria and may form during the experimental
synthesis. The bulk modulus calculated by BM-EOS (B0) is comparable with that of the values calculated from
both the Voigt–Reuss–Hill approximations (BH) and experimental data.[22,32,35] According to the Pugh criterion, the B/G ratio identifies the ductility/brittleness, which
is an important mechanical factor for gauging the plastic deformation
and braking ability of a material.[57] While
the Young’s modulus measures the stiffness of the material,
the shear modulus is a measure of its resistance to plastic deformation.
Further, we can also study the shear modulus over the bulk modulus
for all the polymorphs of SnO2 are ductile with B/G > 1.75 and ν > 0.26, which
suggests
that they are all ductile at zero pressure. Here, B/G and ν, the Poisson’s ratio, are
greater than the critical values. The bulk modulus of the three equally
stable polymorphs are approximately equal.[36] The calculated moduli of the polymorphs do not follow any particular
order, which scattered 2–20% from the reported values.[22] In addition, Pnma-I and Pbca having the highest elastic nature among the stable
polymorphs mean that they have strong resistance toward the applied
pressure. Moreover, from the Vickers hardness test, it is evident
that it is a weakly compressible material. The B/G values and the compressibility of the polymorphs are given
in Table S2 in the Supporting Information.
This study shows how SnO2 polymorphs react to mechanical
energy and are more advantageous under force.
Elastic Anisotropy
Almost all crystalline
solids are anisotropic, which means that physical quantities and orientations
vary within the same crystal. This crystal anisotropy is relevant
to a wide range of crystalline properties, including optical, magnetic,
dielectric, and surface properties. Researchers are mostly interested
in understanding crystal anisotropy and being able to control and
predict crystal anisotropy, especially in the pharmaceutical industry.
In the present work, the anisotropic properties of the SnO2 polymorphs can be determined from universal anisotropic index Au and shear anisotropic indexes A1, A2, and A3, from the following equations.[58]where, GV and BV are shear and bulk
moduli obtained from the
Voigt approximation, respectively.In general, the quantitative
measurement
of Au specifies the elastic anisotropy
of a single crystal. Normally, for an isotropic solid, Au is equal to zero. Therefore, any deviation of Au from zero signifies the degree of anisotropy.
Hence, the value of A1, A2, and A3 is unity for an
isotropic solid.Table S3 of the
Supporting Information
contains the anisotropic indices of seven stable polymorphs of SnO2. The values of A1, A2, and A3 show the degree
of anisotropy along the xy, xz,
and yz planes, respectively. It is obvious that the I4/m polymorph is much more anisotropic
as they have strongly deviated from the isotropic value. P42/mnm, Pnnm, and Pbcn come next to I4/m, with finally Pa3̅ having the lowest anisotropic
index.Usually, in an isotropic material, the 3D surface becomes
spherical,
and any deviation from the perfect sphere indicates higher anisotropy.
Therefore, Figure provides a comprehensive 3D visualization of the anisotropic properties
of the SnO2 polymorphs for the orientation-dependent Young’s
modulus along the xy, xz, and yz planes under ambient conditions for the minimum energy
polymorphs with a newly identified I4/m polymorph. The anisotropic orientations of the minimum energy polymorphs P42/mnm and Pnnm are similar. Because of their instability in structure and mechanical
and thermodynamic properties, Fm3̅m and I41/amd deviate
from the sphere. In addition, from the compressibility values, Fm3̅m and I41/amd are the most anisotropic polymorphs,
which are omitted due to instability. Figure S3 of the Supporting Information shows that the spatial-dependent Young’s
modulus of (a) Pa3̅ and (e) Pbca exhibits a spherical shape, presenting a homogeneous nature, while
the rest of the polymorphs have multiple valleys indicating inhomogeneity.
Additionally, the shear anisotropy and Poisson’s ratio of the
polymorphs along the planes xy, xz, and yz are given in Figures S4 and S5 of the Supporting Information. Specifically,
from the results of Vicker’s hardness test, it is inferred
that Pnma-I is the strongest phase.
Figure 8
3D spatial dependence
of Young’s modulus of the three minimum
energy polymorphs (a) P42/mnm, (b) Pnnm, (c) Imma and of (d) I4/m, the newly identified expended lattice
polymorph of SnO2. The rest of the polymorphs are seen
in the S3.
3D spatial dependence
of Young’s modulus of the three minimum
energy polymorphs (a) P42/mnm, (b) Pnnm, (c) Imma and of (d) I4/m, the newly identified expended lattice
polymorph of SnO2. The rest of the polymorphs are seen
in the S3.
Raman
and IR Vibrational Studies of SnO2 Polymorphs
The Imma polymorph is
mechanically unstable, and Fm3̅m, Pnma-II, and I41/amd are dynamically unstable from phonon studies; hence,
we investigated the vibrational studies of the remaining seven stable
polymorphs. The Raman and IR activity of the seven crystalline polymorphs
of SnO2 can be identified from the irreducible representation.
The mode of vibration at zone centers in the Brillouin zone of the
respective polymorphs are given in Figure S5 and Table S4. From these representations, it is observed that the
orthorhombic structures exhibit more vibrations than other cubic and
tetragonal structures. Although the five crystals have orthorhombic
structures, due to different molecular structures and different lattice
constants, their vibrational frequencies are different. We have calculated
the Raman and IR frequencies of all the stable polymorphs of SnO2 as shown in Figure .
Figure 9
IR and Raman vibrational spectra of the stable polymorphs involved
in the calculation with their vibrational assignments.
IR and Raman vibrational spectra of the stable polymorphs involved
in the calculation with their vibrational assignments.A complete description of the calculated Raman and IR frequencies
are tabulated in Table S4 with the corresponding
modes of vibrations. The suffix g in the irreducible representations
represents the Raman active and u represents the IR active modes.
The modes Ag and B1g and B2g and
B3g correspond to the vibrations in a plane perpendicular
to the c-axis, whereas mode Eg corresponds
to vibrations in the direction of the c axis. The
two orthorhombic structures Pbcn and Pbca show similar modes of vibrations but their frequencies are different,
which belong to the D2 point group, and their structures are different. In addition, there
is a shift in the Raman frequencies, which is observed for all the
modes of these structures. The double degenerated Eg mode
was observed in all the cubic, tetragonal, and Pnnm of the orthorhombic structures. Particularly, this Eg mode corresponds to vibrations of O atoms in the direction parallel
to the c axis. In the Raman active modes, the O atom
vibrates with respect to the Sn atom, whereas Ag and B2g correspond to the expansion and contraction of the Sn–O
bond. The B1g mode has the rotation of the O atom around
the Sn atom. The Raman peaks differ for different structures and offer
an efficient way to differentiate the various forms of polymorphism.
In the orthorhombic structures, the intensity of the A1g mode of vibrations is prominent, whereas, in the tetragonal structures,
the intensity of the Eg mode is prominent. When compared
to the remaining structures, Pbcn has a greater number
of absorption frequencies.
Conclusions
We used first-principles calculations to investigate 11 distinct
SnO2 polymorphs so as to determine their relative stability,
mechanical stability, and dynamical stability for the first time.
Extensive research demonstrates the following: rutile is the global
minimum structure among the identified polymorphs based on E–V
data, also the new polymorph I4/m in the expanded lattice may form during the nanosynthesis of SnO2. The possible other metastable polymorphs I41/amd, Pbcn, Pnma-II, and I4/m-SnO2 have been identified; however, under certain experimental
conditions, these polymorphs may be stable. Furthermore, Fm3̅m, I41/amd, and Pnma-II are unstable in the dynamical
stability criteria, so we omitted these structures due to their imaginary
frequency and may not be used to synthesize even under experimental
conditions. The electronic structural studies of eight dynamically
stable polymorphs were reported; from this, it is proved that all
the structurally and dynamically stable SnO2 polymorphs
were semiconductors obtained from the hybrid XC functional HSE06,
which overcomes the underestimation of the band gap of the polymorphs
by other theoretical reports. All polymorphs under this study are
wide band gap semiconductors, which are inferred from the band gap
values. Pa3̅, Pbca, and Pnma-I-SnO2 have an indirect band gap, while
the rest of the stable polymorphs have a direct band gap. It is suitable
for photocatalytic and photovoltaic gas sensors and also as a chemical
sensor because its band gap scatters from 2.15 to 3.38 eV. The ionic
bonding nature of the polymorphs makes them suitable for use as a
base material in a variety of applications such as window materials
in solar cells. Imma is a mechanically unstable phase;
hence, it is not suitable for experimental synthesis. The orthorhombic Pbca (ZrO2) is the stiffest material because
their shear modulus is the highest among the stable polymorphs. The
high B/G values of all the polymorphs
indicate that they are ductile in nature. Specific properties such
as Young’s modulus, shear modulus, and Poisson’s ratio
are studied. From this, it is concluded that I41/amd has the most deviated in Young’s
modulus, whose contour has several valleys. Our work has led us to
conclude that 7 of the 11 polymorphs met all of the stability conditions,
with rutile being the experimentally proven phase and I4/m the newly identified polymorph of SnO2. The newly found polymorphs may have evolved during the synthesis
of the SnO2 nanostructure.
Methodology
Total energies were calculated by the projected APW implementation
of the Vienna ab initio simulation package (VASP).[59−62] These calculations were made
with the Perdew, Burke, and Ernzerhof (PBE) exchange–correlation
functional.[63] The interaction between the
core and the valence electrons was described using the PAW method.[64,65] Ground-state geometries were determined by minimizing stresses and
Hellman–Feynman forces using the conjugate gradient algorithm
with a force convergence of less than 10–3 eV Å–1. Brillouin zone integration was performed with a
Gaussian broadening of 0.1 eV during all relaxations. From various
sets of calculations, it was found that 512 -points in the whole Brillouin zone for the structure with
a 600 eV plane wave cutoff are sufficient to ensure optimum accuracy
in the computed results. The k-points were generated
using the Monkhorst–Pack method with a grid size of 8 ×
8 × 8 for structural optimization. A similar density of -points and energy cutoff is used to estimate
the total energy as a function of volume for all the structures considered
in the present study as given in Table S5 of Supporting Information. Iterative relaxation of atomic positions
was stopped when the change in the total energy between successive
steps was less than 1 meV/cell. For improving the electronic energy
level, the HSE (Heyd–Scuseria–Ernzerhof) exchange–correlation
functional is used. This approach will provide accurate results that
are comparable with experimental measurements.A frozen phonon
calculation was performed using suitable supercell
models, using the Phonopy software to calculate the phonon dispersion
and the associated density of states.[39] The suitable supercell models are given in Table S5 of Supporting Information. A displacement of 0.0075 Å
was applied to the atoms, with a symmetry consideration, to obtain
the force constant matrix. Displacements along the opposite directions
were included to improve the accuracy. The dynamical matrices were
calculated from the force constants, and phonon density of state (PhDOS)
curves were computed on a Monkhorst–Pack grid.[66]The Raman and IR spectra for all the
polymorphs of SnO2 are obtained from density functional
perturbation theory as implemented
in the CASTEP package.[67] For the CASTEP
computation, we have used the optimized VASP structures with a similar point mesh as the input with Norm-conserving
pseudopotentials (energy cutoff of 800 eV) and the GGA exchange correlation
functional proposed by PBE. Full geometry optimization was made, and
we found that both codes gave almost similar lattice parameters and
atomic positions.
Authors: Lindsay R Merte; Mathias S Jørgensen; Katariina Pussi; Johan Gustafson; Mikhail Shipilin; Andreas Schaefer; Chu Zhang; Jonathan Rawle; Chris Nicklin; Geoff Thornton; Robert Lindsay; Bjørk Hammer; Edvin Lundgren Journal: Phys Rev Lett Date: 2017-08-31 Impact factor: 9.161
Authors: A Biaggi-Labiosa; F Solá; M Lebrón-Colón; L J Evans; J C Xu; Gw Hunter; G M Berger; J M González Journal: Nanotechnology Date: 2012-10-12 Impact factor: 3.874
Authors: Weiwu Chen; Zhaojun Qin; Yingkai Liu; Yan Zhang; Yanbo Li; Si Shen; Zhiming M Wang; Hai-Zhi Song Journal: Nanoscale Res Lett Date: 2017-06-12 Impact factor: 4.703