| Literature DB >> 35373205 |
Shaoxian Li1, Mohammad Tohidi Vahdat1,2, Shiqi Huang1, Kuang-Jung Hsu1, Mojtaba Rezaei1, Mounir Mensi3, Nicola Marzari2, Kumar Varoon Agrawal1.
Abstract
Oxidation of graphitic materials has been studied for more than a century to synthesize materials such as graphene oxide, nanoporous graphene, and to cut or unzip carbon nanotubes. However, the understanding of the early stages of oxidation is limited to theoretical studies, and experimental validation has been elusive. This is due to (i) challenging sample preparation for characterization because of the presence of highly mobile and reactive epoxy groups formed during oxidation, and (ii) gasification of the functional groups during imaging with atomic resolution, e.g., by transmission electron microscopy. Herein, we utilize a low-temperature scanning tunneling microscope (LT-STM) operating at 4 K to solve the structure of epoxy clusters form upon oxidation. Three distinct nanostructures corresponding to three stages of evolution of vacancy defects are found by quantitatively verifying the experimental data by the van der Waals density functional theory. The smallest cluster is a cyclic epoxy trimer. Their observation validates the theoretical prediction that epoxy trimers minimize the energy in the cyclic structure. The trimers grow into honeycomb superstructures to form larger clusters (1-3 nm). Vacancy defects evolve only in the larger clusters (2-3 nm) in the middle of the cluster, highlighting the role of lattice strain in the generation of vacancies. Semiquinone groups are also present and are assigned at the carbon edge in the vacancy defects. Upon heating to 800 °C, we observe cluster-free vacancy defects resulting from the loss of the entire epoxy population, indicating a reversible functionalization of epoxy groups.Entities:
Year: 2022 PMID: 35373205 PMCID: PMC8970004 DOI: 10.1021/jacsau.1c00570
Source DB: PubMed Journal: JACS Au ISSN: 2691-3704
Figure 1STM images of O3-treated HOPG with a scanning area of (A) 300 nm × 300 nm, (B) 75 nm × 75 nm, and (C) 10 nm × 10 nm. Bias voltage: −0.05 V. Tunneling current: 0.5 nA. (D) Cross-sectional profile of the line A–A′ drawn in C. (E) Three-dimensional STM images of C. Statistical analysis of the dimension of the donut-shaped cluster for (F) cluster width and (G) cluster length.
Figure 2XPS spectra of O3-treated HOPG. (A) C1s spectrum. (B) O1s spectrum.
Figure 3Nanostructure analysis for the oxygen clusters. (A) STM image of a single epoxy cyclic trimer. (B) Structure of the single epoxy cyclic trimer. (C) Simulated STM image for the single epoxy cyclic trimer. (D) STM image of a large oxygen cluster. (E) High-magnification STM image of the area circled in (D). (F) Configuration of the epoxy cyclic trimers in the oxygen cluster shown in E. (G) Structure of the epoxy cyclic trimers formed an infinite oxygen cluster. (H) Simulated STM image for the epoxy cyclic trimers formed infinite oxygen cluster as shown in G. Bias voltage: −0.05 V. Tunneling current: 0.5 nA.
Figure 4(A) XPS O1s spectrum of O3-treated HOPG after 800 °C heating treatment. The STM images of the O3-treated HOPG surface after annealing at 800 °C with a scanning area of (B) 30 nm × 30 nm, (C) 6 nm × 6 nm, and (D) 3.2 nm × 2.6 nm. (E) 3D STM images of the nanopore shown in panel D. (F) Cross-sectional profile of line B–B′ in C. Bias voltage: −0.05 V. Tunneling current: 0.5 nA.
Figure 5Three-dimensional STM images (5 nm × 5 nm) of the oxidized HOPG surface to illustrate the different etching stages. (A) Several images of small epoxy clusters. (B) Several examples of larger clusters where carbon vacancies are not yet formed. (C) Several examples of donut-shaped clusters where carbon vacancies form in the middle of the cluster. Bias voltage: −0.05 V. Tunneling current: 0.5 nA.