| Literature DB >> 35335707 |
Lei Wu1,2, Xiangyang Sun1, Feng Gong1, Junyi Luo1, Chunyu Yin2, Zhipeng Sun2, Rui Xiao1.
Abstract
Owing to the excellent thermal properties of graphene, silicon carbide (SiC) combined with graphene is expected to obtain more outstanding thermal performance and structural stability at high temperatures. Herein, the thermal conductivity of graphene/SiC heterostructures (GS-Hs) with different structures and atomic orientations was calculated through non-equilibrium molecular dynamics (NEMD) simulations. The temperature dependence and size effect on the thermal transport properties of GS-Hs were systematically investigated and discussed. The continuous addition of graphene layers did not always have a positive effect. The thermal transport performance of GS-Hs approached the intrinsic thermal conductivity of SiC when the interaction gradually decreased with the distance between SiC and graphene. Studies on temperature and size dependence show opposite trends. The enhancement effect of graphene was limited at small distances. The thermal conductivity of GS-Hs had a negative correlation with temperature and increased with the system size. Meanwhile, the thermal conductivity of GS-Hs was predicted to be 156.25 (W·m-1·K-1) at the macroscopic scale via extrapolation. The model established in this paper is also applicable to other material simulation processes, as long as the corresponding parameters and potential functions are available. This study will provide inspiration for the optimized design and preparation of highly efficient cladding materials in nuclear reactors.Entities:
Keywords: cladding material; graphene/SiC heterostructure; molecular dynamics simulation; nuclear reactor; thermal conductivity
Year: 2022 PMID: 35335707 PMCID: PMC8951570 DOI: 10.3390/nano12060894
Source DB: PubMed Journal: Nanomaterials (Basel) ISSN: 2079-4991 Impact factor: 5.076
Figure 1Top views of SiC (a), graphene (b) and GS-Hs (c). The interlayer distance between graphene and SiC is 3.4 Å (d). The yellow and gray balls represent Si and C atoms, respectively.
Lennard-Jones parameters.
| Elements | ε (eV) | σ (Å) |
|---|---|---|
| Si-C | 0.00891 | 3.629 |
| Si-Si | 0.01740 | 3.826 |
| C-C | 0.00455 | 3.431 |
Figure 2A typical schematic illustration of the NEMD simulation setup. Top (a) and side (b) views of GS-Hs. Heat flows from the heat source to the cool source, as indicated by the arrow pointing towards the cool source.
Figure 3Thermal conductivities and schematic structure of GS-Hs on (a) C-terminated surface and (b) Si-terminated surface. The error bars are the standard deviation obtained from 3 separate calculations.
Figure 4The temperature distribution and temperature gradient at (a) 300 K, (b) 400 K, (c) 500 K, (d) 1000 K, (e) 1800 K and (f) 2700 K.
Figure 5Thermal conductivity of GS-Hs in the substrate temperature range of 300 to 3000 K.
Figure 6The temperature distribution and temperature gradient at system size of (a) 20 Å, (b) 40 Å, (c) 140 Å, and (d) 200 Å.
Figure 7(a) Thermal conductivities as a function of the system size. (b) Inverse of thermal conductivity as a function of the inverse of the system size.