| Literature DB >> 35293734 |
Lisa Heymann1,2, Moritz L Weber1,2, Marcus Wohlgemuth1,2, Marcel Risch3, Regina Dittmann1,2, Christoph Baeumer1,2,4, Felix Gunkel1,2.
Abstract
The Co-O covalency in perovskite oxide cobaltites such as La1-xSrxCoO3 is believed to impact the electrocatalytic activity during electrochemical water splitting at the anode where the oxygen evolution reaction (OER) takes place. Additionally, space charge layers through band bending at the interface to the electrolyte may affect the electron transfer into the electrode, complicating the analysis and identification of true OER activity descriptors. Here, we separate the influence of covalency and band bending in hybrid epitaxial bilayer structures of highly OER-active La0.6Sr0.4CoO3 and undoped and less-active LaCoO3. Ultrathin LaCoO3 capping layers of 2-8 unit cells on La0.6Sr0.4CoO3 show intermediate OER activity between La0.6Sr0.4CoO3 and LaCoO3 evidently caused by the increased surface Co-O covalency compared to single LaCoO3 as detected by X-ray photoelectron spectroscopy. A Mott-Schottkyanalysis revealed low flat band potentials for different LaCoO3 capping layer thicknesses, indicating that no limiting extended space charge layer exists under OER conditions as all catalyst bilayer films exhibited hole accumulation at the surface. The combined X-ray photoelectron spectroscopy and Mott-Schottky analysis thus enables us to differentiate between the influence of the covalency and intrinsic space charge layers, which are indistinguishable in a single physical or electrochemical characterization. Our results emphasize the prominent role of transition metal oxygen covalency in perovskite electrocatalysts and introduce a bilayer approach to fine-tune the surface electronic structure.Entities:
Keywords: La1−xSrxCoO3; Mott−Schottky analysis; OER descriptor; band bending; covalency; interface hybridization; oxygen evolution reaction; perovskite oxide
Year: 2022 PMID: 35293734 PMCID: PMC8972245 DOI: 10.1021/acsami.1c20337
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229
Figure 1(a) Catalyst design: 52 uc of LSCO were deposited on NSTO by PLD. LCO was deposited subsequently in a thickness of 2, 4, or 8 uc. For a 26 uc LCO layer thickness, the LSCO thickness was decreased to 26 uc. (b) In situ RHEED data of the single LCO 52 uc and LSCO 52 uc and bilayer LSCO 52 uc/LCO 8 uc films. (c) X-ray diffractograms of single LCO 52 uc and LSCO 52 uc and bilayer LSCO 52 uc/LCO 8 uc films. (d) AFM scan of the bilayer sample 52 uc LSCO/8 uc LCO. (e) Sr/La ratio determined from the core-level XPS spectra Sr 3d and La 3d for single LSCO and bilayer samples.
Figure 2(a) LCO and LSCO XPS of the valence band states close to the Fermi level. LCO and LSCO signals are separated in three main domains as schematically drawn in the spectra with the peak A and B in blue representing two O 2p states and the red peak C representing the Co 3d states.[10,16] The valence band maximum (VBM) was determined via the zero-photoemission intensity intercept of a linear regression fit of the low-binding-energy edge of the valence band spectra.[23,24] (b) XPS spectra of the valence states close to the Fermi level of single LSCO and LCO and the bilayer films (2, 4, or 8 uc marked with *) and the single LCO film. Inset: Observed VBM as a function of LCO thickness. The error bars represent the possible maximum deviation of the consecutive measurements.
Figure 3(a) Staircase CP of LSCO to determine the Tafel plot. The red boxes mark the last minute of each current step. In this range, the applied voltage was averaged to determine the mean overpotential for the six data points in the Tafel plot in Figure c. (b) Nyquist plot of an NSTO/LSCO film. The thin films were iR-corrected with the Ru and additionally with the NSTO/LSCO substrate/thin film interfacial resistance (Rs/f). (c) Tafel plot of LSCO, LCO, and their bilayer films. The single LCO film results could not be corrected by the high NSTO/LCO resistance (Rs/f).
Figure 4MS plots of single LSCO and LCO and bilayer films in alkaline media shown from OCV to the OER voltage regime. The dashed lines represent the linear extrapolation of the depletion region to obtain the flat band potential (between 1.35 and 1.45 V vs RHE for all samples). The corresponding scheme of conduction and valence band (CB and VB) bending as a function of the applied voltage is shown above.