| Literature DB >> 35222934 |
Musen Li1, Rika Kobayashi2, Roger D Amos2, Michael J Ford3, Jeffrey R Reimers1,3.
Abstract
Five effects of correction of the asymptotic potential error in density functionals are identified that significantly improve calculated properties of molecular excited states involving charge-transfer character. Newly developed materials-science computational methods are used to demonstrate how these effects manifest in materials spectroscopy. Connection is made considering chlorophyll-a as a paradigm for molecular spectroscopy, 22 iconic materials as paradigms for 3D materials spectroscopy, and the VN - defect in hexagonal boron nitride as an example of the spectroscopy of defects in 2D materials pertaining to nanophotonics. Defects can equally be thought of as being "molecular" and "materials" in nature and hence bridge the relms of molecular and materials spectroscopies. It is concluded that the density functional HSE06, currently considered as the standard for accurate calculations of materials spectroscopy, should be replaced, in most instances, by the computationally similar but asymptotically corrected CAM-B3LYP functional, with some specific functionals for materials-use only providing further improvements. This journal is © The Royal Society of Chemistry.Entities:
Year: 2021 PMID: 35222934 PMCID: PMC8809424 DOI: 10.1039/d1sc03738b
Source DB: PubMed Journal: Chem Sci ISSN: 2041-6520 Impact factor: 9.825
Fig. 1Atomic models used to consider the spectroscopy of the VN− defect in h-BN: compounds 1, 2, 3, and 4, and 2D-periodic layers P53, P64, and P75 (N-blue, B-beige, H-white).
Effect of functional variation from HSE06 to B3LYP to CAM-B3LYP (and ωB97xD) on calculated energiesa (and differences from experimentb), in eV, of chlorophyll-a
| State | HSE06 | B3LYP | CAM-B3LYP | ωB97xD |
|---|---|---|---|---|
| HOMO–LUMO | 2.04 | 2.54 | 4.19 | 5.22 |
|
| 2.21 (0.27) | 2.19 (0.25) | 2.17 (0.23) | 2.16 (0.22) |
|
| 2.40 (0.26) | 2.37 (0.23) | 2.56 (0.42) | 2.58 (0.44) |
|
| 3.26 (0.18) | 3.23 (0.15) | 3.49 (0.41) | 3.51 (0.43) |
|
| 3.41 (0.03) | 3.38 (0.00) | 3.75 (0.37) | 3.77 (0.39) |
|
| 3.16 (<−0.1) | 3.13 (<−0.1) | 3.83 (<0.6) | 3.72 (<0.5) |
|
| 3.12 (<−0.1) | 3.10 (<−0.1) | 3.66 (<0.4) | 3.89 (<0.7) |
| CT to carbonyl | 3.25 (<0.0) | 3.21 (<0.0) | 3.83 (<0.6) | 3.83 (<0.6) |
Vertical excitation energies at the CAM-B3LYP/6-31G*/D3(BJ) ground-state geometry.[91]
Gas-phase,[92] with the Q band centre (an absorption minimum) estimated using established methods:[26]Q = 1.94 eV, Q = 2.14 eV, B = 3.08 eV, B = 3.38 eV, N,N > 3.2 eV.
Known effects of asymptotic correction on calculated molecular spectroscopic properties
| Effect | Description |
|---|---|
| (1) | Significant increase in the HOMO–LUMO bandgap |
| (2) | Significant increase in exciton binding energies for charge-localised transitions, cancelling the increase in the HOMO–LUMO gap |
| (3) | Effects (1) and (2) combine to produce a significant increase in the relative energy of charge-transfer transitions |
| (4) | Reduction in the differential error in state energies to provide an improved description of the excited-state manifold |
| (5) | Improved description of the shapes of potential energy surfaces, and hence reorganisation energies, Franck–Condon (Huang–Rhys) factors, Herzberg–Teller couplings, |
MAD and/or MAX errors in lattice parameters, exciton binding energies, and band gaps for up to 22 materials, evaluated using various density functionals (see ESI for details) blocked into those with (bottom) and without (top) asymptotic correction[32–34,41,44,71,93–121]
| Method | Lattice const. MAD/Å | Orbital bandgap MAD/eV | Orbital bandgap MAX/eV |
|---|---|---|---|
| PBE[ | 0.044 | 2.01 | 4.9 |
| SCAN[ | 0.021 | 1.30 | 4.1 |
| mBJLDA[ | 0.52 | 1.8 | |
| PBE0 (ref. | 0.60 | 2.0 | |
| HSE06 (ref. | 0.033 | 0.86 | 2.7 |
| B3LYP | 0.020 | 0.81 | 1.8 |
| CAM-B3LYP[ | 0.004 | 0.33 | 1.1 |
| WOT-SRSH[ | 0.35 | 1.2 | |
| PBE0(α)[ | 0.40 | 1.1 | |
| SC-hybrid[ | 0.30 | 1.5 | |
| RSH μWS[ | 0.20 | 1.0 | |
| RSH μTF[ | 0.20 | 1.0 | |
| RSH μerfc-fit[ | 0.30 | 1.2 | |
| DD-PBEH[ | 0.28 | 0.7 | |
| RS-DDH[ | 0.23 | 0.7 | |
| DD0-RSH-CAM[ | 0.30 | 1.8 | |
| DD-RSH-CAM[ | 0.031 | 0.25 | 1.4 |
This work also, see ESI.
Reported[71] for a large data set: PBE 1.2 eV, SCAN 0.9 eV, PBE0 0.6 eV, HSE06 0.5 eV.
Excludes data for semiconductors predicted to be metals.
Other data set:[33] RSH μWS 0.29 eV, RSH μTF 0.30 eV.
Other data set after correction for zero-point energy[44] 0.08 eV.
Other data set:[34] PBE 1.10 eV, DD-PBEH 0.90 eV, RS-DDH 0.68 eV, DD-RSH-CAM 0.41 eV.
Other data set[94] 0.47 eV.
Other data sets give 0.030 Å (ref. 94) and 0.025 Å.[105]
Other data set, evaluated using numerical functional derivatives, gives[104] 0.053 Å.
Calculated vertical excitation energies for the VN− defect in h-BN, in eV, from the (1)1A1′ ground state of the model compounds 1–4 (Fig. 1), obtained using time-dependent methods
| State | EOM-CCSD | TD-CAM-B3LYP | TD-HSE06 | ||||||
|---|---|---|---|---|---|---|---|---|---|
| 1 | 1 | 2 | 3 | 4 | 1 | 2 | 3 | 4 | |
| (1)1 | 3.65 | 3.36 | 3.11 | 3.02 | 2.97 | 3.26 | 3.10 | 3.02 | 2.99 |
| (1)1 | 4.82 | 4.53 | 3.79 | 3.64 | 3.63 | 4.25 | 2.78 | 2.21 | 1.85 |
| (2)1 | 4.09 | 3.85 | 3.74 | 3.42 | 2.69 | 2.26 | |||
| (1)1 | 3.54 | 3.77 | 3.62 | 2.52 | 2.59 | 1.81 | |||
| (2)1 | 5.47 | 5.20 | 4.67 | 3.61 | 3.84 | 4.77 | 3.85 | 2.10 | 2.20 |
| (1)3 | 3.09 | 2.77 | 2.33 | 2.21 | 2.18 | 2.66 | 2.27 | 2.16 | 2.13 |
| (1)3 | 3.65 | 3.19 | 2.73 | 2.62 | 2.58 | 2.99 | 2.47 | 2.18 | 1.85 |
| (2)3 | 5.28 | 3.75 | 3.61 | 3.59 | 4.87 | 2.78 | 2.39 | 2.22 | |
| (1)3 | 3.46 | 3.71 | 3.61 | 2.43 | 2.54 | 1.80 | |||
| (1)3 | 4.86 | 4.43 | 4.32 | 3.60 | 3.82 | 3.97 | 3.51 | 2.08 | 2.19 |
Fig. 2Comparison of low-energy singlet and triplet state vertical excitation energies for the VN− defect of h-BN (Tables 3 and 4) for varying ring-size models (Fig. 1): (a)-by TD-CAM-B3LYP, (b)-by TD-HSE06, (c)-from DFT calculated state-energy differences. (d) Shows the key orbitals of 4 involved in a localized defect transition and in a charge-transfer transition (CAM-B3LYP orbitals are indicated, analogous HSE06 orbitals are shown in ESI Fig. S1† and are very similar).
Calculated vertical excitation energies for the VN− defect in h-BN, in eV, from the (1)1A1′ ground statea of the model compounds 1–4 (in D3h symmetry), and the periodic layers P53, P64, and P75 (in just C2v symmetry as necessitated by the boundary conditions, utilizing either 1 × 1 × 1 or 1 × 2 × 2 k-points), obtained from state energy differences
| Method | (1)3 | (1)3 | (1)3 | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| 1 | 2 | 3 | 4 | 2 | P53 1 × 1 × 1 | P64 1 × 1 × 1 | P75 1 × 1 × 1 | P53 1 × 2 × 2 | P64 1 × 2 × 2 | P75 1 × 2 × 2 | |
| CAM-B3LYP | 2.89 | 2.48 | 2.36 | 2.33 | 3.25 | 2.14 | 2.24 | 2.25 | 2.30 | 2.38 | 2.39 |
| HSE06 | 2.74 | 2.41 | 2.30 | 2.27 | 2.55 | 1.36 | 1.57 | 1.63 | 1.52 | 1.64 | 1.66 |
| HF | 2.53 | 1.95 | 1.82 | 4.11 | |||||||
| MP2 | 3.25 | 2.83 | 2.72 | 3.48 | |||||||
| CCSD | 3.06 | 2.59 | 3.63 | ||||||||
| CCSD(T) | 3.12 | ||||||||||
For 1–4, CAM-B3LYP/6-31G* geometries are used, except for the HSE06 calculations for which HSE06/6-31G* ones are used; for P53–P75, HSE06 geometries at 1 × 1 × 1 k-points are used.
Using the cc-pVTZ basis set yields 2.36 eV for CAM-B3LYP and 2.25 eV for HSE06.
Fig. 3Shown for of the VN−1 defect in h-BN are the HOMO and LUMO relative electron densities, along a plane 0.8 Å above the atoms, for orbitals #278 and #279 involved in the (1)3B1 (b1 → a1) component of the (1)3E′′ lowest-energy state. These are based upon 2D model P75, using 1 × 2 × 2 k-points, and list each orbital energy, symmetry, and occupancy (see SI for many more frontier orbitals and analogous results for P53 and P64); for the triplet state, only densities for the spin-up component reflecting the electron majority are shown.