| Literature DB >> 35209643 |
A Bjelajac, M Gromovyi, E Sakat, B Wang, G Patriarche, N Pauc, V Calvo, P Boucaud, F Boeuf, A Chelnokov, V Reboud, M Frauenrath, J-M Hartmann, M El Kurdi.
Abstract
GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn.Entities:
Year: 2022 PMID： 35209643 DOI： 10.1364/OE.449895
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894