| Literature DB >> 35198770 |
Rokhsareh Akbarzadeh1, Olusola Olaitan Ayeler2, Qusai Ibrahim3, Peter Apata Olubambi2, Patrick Ndungu1.
Abstract
DFT calculations using Material Studio (2019) were used to ascertain the changes in electronic properties of recycled expanded polystyrene (rEPS) after modification with nanoparticles of ZnS and ZnO. The nanocomposites were obtained using rEPS and suitable metal salt precursors via a solvothermal method. The XRD analysis was conducted to obtain the crystallography data of the new rEPS-based nanocomposites. Using Material Studio simulation software, the potential photocatalytic properties of the new prepared material was predicted and information on the electronic band structure was extracted. The calculated band gap values for rEPS and ZnS-ZnO-rEPS nanocomposite were 4.217 eV and 2.698 eV, respectively. Furthermore, our results showed that the nanocomposite is a p-type semiconductor. From the electronic structure and the band gap narrowing, these nanocomposites obtained from a waste material may have some potential in photocatalytic applications.Entities:
Keywords: Density functional theory; Electronic structure; Recycled expanded polystyrene; ZnO; ZnS
Year: 2022 PMID: 35198770 PMCID: PMC8841380 DOI: 10.1016/j.heliyon.2022.e08903
Source DB: PubMed Journal: Heliyon ISSN: 2405-8440
Lattice constants for rPES, ZnO and ZnS.
| Nanocomposite | rPES | ZnO | ZnS | |
|---|---|---|---|---|
| Lattice constants (Å) | a | 21.90 | 3.2420 | 5.40 |
| b | 21.90 | 3.2420 | 5.40 | |
| c | 6.65 | 5.1760 | 5.40 | |
| corresponding angle | α | 90° | 90° | 90° |
| β | 90° | 90° | 90° | |
| γ | 90° | 120° | 90° | |
Figure 1X-ray powder diffraction pattern for rEPS, ZnS–ZnO and ZnS–ZnO-rEPS.
Figure 2Molecular structure of ZnO–ZnS-rEPS nanocomposite, ZnO atoms with (Zn atoms in blue, Oxygen atoms in red), ZnS (Zn atoms in blue, Sulfide atoms in yellow), and rEPS (Carbon atoms in dark grey, and Hydrogen atoms in white). a) side view, b) top view.
Figure 3Calculated band structures for (a) rEPS (b) ZnO–ZnS (c)ZnS–ZnO-rEPS.
The band gap information for the starting materials and the prepared materials.
| Material | Bandgap (eV) | Band type | Conduction band (eV) | Valence band (eV) |
|---|---|---|---|---|
| rEPS | 4.217 | Direct | 3.852 | 0.365 |
| ZnO–ZnS | 1.389 | Direct | 1.106 | 0.283 |
| ZnS–ZnO-rEPS | 2.698 | Indirect | 2.2521 | 0.4459 |
Figure 4Density of States for (a) rEPS (b) ZnO–ZnS (c)ZnS–ZnO-rEPS.
Figure 5Projected density of states of (a)rEPS, (b)ZnO–ZnS and (c)ZnS–ZnO-rEPS.