| Literature DB >> 35011518 |
Shuonan Chen1, Hai Bi2, Wenjing Tian1, Yu Liu1.
Abstract
Six novel Ir(C^N)2(L^X)-type heteroleptic iridium complexes with deep-red and near-infrared region (NIR)-emitting coverage were constructed through the cross matching of various cyclometalating (C^N) and ancillary (LX) ligands. Here, three novel C^N ligands were designed by introducing the electron-withdrawing group CF3 on the ortho (o-), meta (m-), and para (p-) positions of the phenyl ring in the 1-phenylisoquinoline (piq) group, which were combined with two electron-rich LX ligands (dipba and dipg), respectively, leading to subsequent iridium complexes with gradually changing emission colors from deep red (≈660 nm) to NIR (≈700 nm). Moreover, a series of phosphorescent organic light-emitting diodes (PhOLEDs) were fabricated by employing these phosphors as dopant emitters with two doping concentrations, 5% and 10%, respectively. They exhibited efficient electroluminescence (EL) with significantly high EQE values: >15.0% for deep red light0 (λmax = 664 nm) and >4.0% for NIR cases (λmax = 704 nm) at a high luminance level of 100 cd m-2. This work not only provides a promising approach for finely tuning the emission color of red phosphors via the easily accessible molecular design strategy, but also enables the establishment of an effective method for enriching phosphorescent-emitting molecules for practical applications, especially in the deep-red and near-infrared region (NIR).Entities:
Keywords: deep-red and near-infrared; iridium complexes; organic light-emitting diodes (OLEDs); phosphorescent
Year: 2022 PMID: 35011518 PMCID: PMC8746706 DOI: 10.3390/molecules27010286
Source DB: PubMed Journal: Molecules ISSN: 1420-3049 Impact factor: 4.411
Scheme 1Synthesis and chemical structures of the iridium complexes.
Figure 1(a) UV–Vis absorption and emission spectra with 470 nm excitation in oxygen-free DCM (5 × 10−5 M) at 298K of all new complexes. Inset: enlarged absorption spectra in the range 550–700 nm. (b) Photoluminescence decay curves of the doped films based on Bebq2 doped with each complex (5 wt%). Inset: the corresponding PL spectra of these doped films with 365 nm excitation.
Photophysical data of all new complexes.
| Complex | Abs. | ||
|---|---|---|---|
| 300(5.85), 342(3.03), 474(1.35) | 684/688 | 0.05, 0.19/0.26, 0.37 | |
| 297(4.40), 457(1.02) | 663/663 | 0.12, 0.37/0.56, 0.69 | |
| 300(3.31), 337(1.82), 471(0.83) | 679/678 | 0.11, 0.26/0.33, 0.40 | |
| 302(3.30), 346(1.77), 478(0.85) | 697/693 | 0.04, 0.15/0.13, 0.28 | |
| 300(3.66), 461(0.97) | 676/675 | 0.10, 0.28/0.28, 0.50 | |
| 301(4.29), 342(2.48), 475(1.19) | 692/693 | 0.06, 0.18/0.16, 0.25 |
a Measured in oxygen-free dichloromethane solution at room temperature (5 × 10−5 M). b Measured in doped film based on Bebq2 host (5%) at room temperature.
Figure 2Cyclic voltammograms of all complexes recorded versus Fc+/Fc in newly distilled DMF solution with 0.1 M n-Bu4NPF6 supporting electrolyte and the scan rate being set to 100 mV s−1.
Electrochemical and thermal data of all new complexes.
| Complex | Eox (V) a | Ered (V) a | HOMO/LUMO b | |
|---|---|---|---|---|
| 0.17 | −1.98 | −4.97/−2.82 | 310 | |
| 0.21 | −1.99 | −5.01/−2.81 | 335 | |
| 0.15 | −2.00 | −4.95/−2.80 | 323 | |
| 0.11 | −1.99 | −4.91/−2.81 | 310 | |
| 0.14 | −1.99 | −4.94/−2.81 | 319 | |
| 0.13 | −1.98 | −4.93/−2.82 | 312 |
a Performed in DMF solvent with 0.1 M n-Bu4PF6 electrolyte with scan rate of 100 mV s−1 using a platinum wire as counter electrode and a porous glass wick Ag/AgNO3 as reference electrode. Potentials are referenced against the Fc+/Fc redox couple. b HOMOs and LUMOs are calculated according to the formula: −[4.8 + Eox/red-E(Fc/Fc+)] eV. c Corresponding to 5% weight loss.
Figure 3Thermal analyses for all complexes: TGA and DSC (inset) thermograms.
Figure 4(a) Schematic energy level diagram of all the devices and chemical structures of various materials being used. (b) EL spectra of all the devices with the luminance of 100 cd m−2.
Figure 5Current density–voltage–luminance (J–V–L) curves of series of devices with doping concentrations of 5 wt% (a) and 10 wt% (b).
Figure 6External quantum efficiency–luminance (EQE–L) curves of the devices with doping concentrations of 5 wt% (a) and 10 wt% (b).
Summary of the EL performance for all devices.
| Device | ||||
|---|---|---|---|---|
| 2.8 | 2660 (8.2) | 7.5, 6.4 | 684 | |
| 2.9 | 2350 (8.2) | 6.2, 5.0 | 688 | |
| 3.0 | 1090 (8.0) | 4.3, 3.8 | 700 | |
| 3.2 | 1140 (8.4) | 4.6, 3.6 | 704 | |
| 2.6 | 9560 (7.6) | 15.5, 14.1 | 664 | |
| 2.6 | 8380 (8.0) | 14.0, 12.3 | 668 | |
| 2.6 | 4700 (8.0) | 10.8, 9.3 | 672 | |
| 2.6 | 3120 (7.8) | 9.3, 7.7 | 680 | |
| 2.8 | 3390 (8.1) | 9.3, 8.1 | 680 | |
| 2.9 | 3070 (8.2) | 8.5, 7.0 | 684 | |
| 2.8 | 1710 (7.8) | 5.4, 4.6 | 692 | |
| 3.0 | 1880 (8.5) | 5.1, 4.2 | 696 |
a Recorded at 1 cd m−2. b In order of the values at 100 and 1000 cd m−2. c Measured at 100 cd m−2.