Literature DB >> 34927808

Strain Engineering in 2D Material-Based Flexible Optoelectronics.

Junli Du1, Huihui Yu1, Baishan Liu1, Mengyu Hong1, Qingliang Liao1, Zheng Zhang1,2, Yue Zhang1,2.   

Abstract

Flexible optoelectronics, as promising components hold shape-adaptive features and dynamic strain response under strain engineering for various intelligent applications. 2D materials with atomically thin layers are ideal for flexible optoelectronics because of their high flexibility and strain sensitivity. However, how the strain affects the performance of 2D materials-based flexible optoelectronics is confused due to their hypersensitive features to external strain changes. It is necessary to establish an evaluation system to comprehend the influence of the external strain on the intrinsic properties of 2D materials and the photoresponse performance of their flexible optoelectronics. Here, a focused review of strain engineering in 2D materials-based flexible optoelectronics is provided. The first attention is on the mechanical properties and the strain-engineered electronic properties of 2D semiconductors. An evaluation system with relatively comprehensive parameters in functionality and service capability is summarized to develop 2D materials-based flexible optoelectronics in practical application. Based on the parameters, some strategies to improve the functionality and service capability are proposed. Finally, combining with strain engineering in future intelligence devices, the challenges and future perspective developing 2D materials-based flexible optoelectronics are expounded.
© 2020 Wiley-VCH GmbH.

Entities:  

Keywords:  2D materials; electric-optical-mechanical coupling effects; figure-of-metrics; flexible optoelectronics; strain engineering

Year:  2020        PMID: 34927808     DOI: 10.1002/smtd.202000919

Source DB:  PubMed          Journal:  Small Methods        ISSN: 2366-9608


  4 in total

1.  Transport properties of MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions tuned by bias and gate voltages.

Authors:  Hong Yu; Danting Li; Yan Shang; Lei Pei; Guiling Zhang; Hong Yan; Long Wang
Journal:  RSC Adv       Date:  2022-06-13       Impact factor: 4.036

2.  Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles.

Authors:  Mengying Liu; Weijie Li; Dan Cheng; Xuan Fang; Hongbin Zhao; Dengkui Wang; Jinhua Li; Yingjiao Zhai; Jie Fan; Haizhu Wang; Xiaohua Wang; Dan Fang; Xiaohui Ma
Journal:  RSC Adv       Date:  2022-05-13       Impact factor: 4.036

3.  Strain-Enhanced Thermoelectric Performance in GeS2 Monolayer.

Authors:  Xinying Ruan; Rui Xiong; Zhou Cui; Cuilian Wen; Jiang-Jiang Ma; Bao-Tian Wang; Baisheng Sa
Journal:  Materials (Basel)       Date:  2022-06-06       Impact factor: 3.748

4.  In Situ Measurements of Strain Evolution in Graphene/Boron Nitride Heterostructures Using a Non-Destructive Raman Spectroscopy Approach.

Authors:  Marc Mezzacappa; Dheyaa Alameri; Brian Thomas; Yoosuk Kim; Chi-Hou Lei; Irma Kuljanishvili
Journal:  Nanomaterials (Basel)       Date:  2022-09-03       Impact factor: 5.719

  4 in total

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