Muneaki Yamamoto1, Akihide Kuwabara2, Tomoko Yoshida1. 1. Research Center for Artificial Photosynthesis, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan. 2. Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan.
Abstract
In order to understand the photocatalytic carbon dioxide reduction over Ag-loaded β-Ga2O3 photocatalysts, first principles calculations based on density functional theory were performed on the surface model of a Ag cluster-adsorbed β-Ga2O3 system. The stable adsorption structures of Ag n (n = 1 to 4) clusters on the β-Ga2O3 (100) surface were determined. In the electronic structure analysis, the valence states of all Ag clusters mixed with the top of the O 2p valence band of Ga2O3, leading the Fermi level of Ag n /β-Ga2O3 to shift to the bottom of the conduction band. It was also revealed that the unoccupied states of Ag n clusters overlapped with the Ga unoccupied states, and occupied electronic states of Ag clusters were formed in the band gap. These calculation results corresponded to the experimental ones obtained in our previous study, i.e., small Ag clusters had strong interaction with the Ga2O3 surface, enhancing the electron transfer between the Ag clusters and the Ga2O3 surface. That is, excited electrons toward Ag n clusters or the perimeter of Ag-Ga2O3 should be the important key to promote photocatalytic CO2 reduction.
In order to understand the photocatalytic carbon dioxide reduction over Ag-loaded β-Ga2O3 photocatalysts, first principles calculations based on density functional theory were performed on the surface model of a Ag cluster-adsorbed β-Ga2O3 system. The stable adsorption structures of Ag n (n = 1 to 4) clusters on the β-Ga2O3 (100) surface were determined. In the electronic structure analysis, the valence states of all Ag clusters mixed with the top of the O 2p valence band of Ga2O3, leading the Fermi level of Ag n /β-Ga2O3 to shift to the bottom of the conduction band. It was also revealed that the unoccupied states of Ag n clusters overlapped with the Ga unoccupied states, and occupied electronic states of Ag clusters were formed in the band gap. These calculation results corresponded to the experimental ones obtained in our previous study, i.e., small Ag clusters had strong interaction with the Ga2O3 surface, enhancing the electron transfer between the Ag clusters and the Ga2O3 surface. That is, excited electrons toward Ag n clusters or the perimeter of Ag-Ga2O3 should be the important key to promote photocatalytic CO2 reduction.
Photocatalytic
reduction of carbon dioxide by semiconductor photocatalysts
is drawing much attention as one of the solutions to environmental
and energy problems, because carbon dioxide as a causative substance
of global warming can be recycled by solar energy.[1−6] From the viewpoint of realizing artificial photosynthesis, it is
important to develop a material that can accelerate the carbon dioxide
reduction reaction in water using water as the electron source.Since the reduction of carbon dioxide in water competes with the
reduction of protons in water, which is thermodynamically favorable,
it is necessary to promote the carbon dioxide reduction by loading
an appropriate cocatalyst on the surface of a semiconductor photocatalyst.
In general, cocatalysts are considered to have the function of providing
reaction sites and reducing the activation energy of the reaction
and also promoting the charge separation of the electrons and holes
generated in the semiconductor by light.[5,6] Previous studies
have reported that the activity and the selectivity of the carbon
dioxide reduction reaction is improved when silver is loaded as a
cocatalyst on semiconductor photocatalysts.[7−15]Among semiconductor photocatalysts, β-gallium oxide
(β-Ga2O3) is known to be a highly active
semiconductor
photocatalyst for overall water splitting.[16] It has been also reported that β-Ga2O3 exhibits activity for reduction of carbon dioxide in water with
a silver cocatalyst.[10,11] In our previous research, the
adsorption behavior of carbon dioxide on silver-loaded β-Ga2O3 (Ag/β-Ga2O3) was
observed by in situ FT-IR measurement, and we have found that silver
clusters promote the formation of the intermediates in the carbon
dioxide reduction reaction.[11] However,
it is not clear how silver clusters on β-Ga2O3 work and promote the reduction of carbon dioxide. It is experimentally
difficult to investigate the local structure and electronic states
of minute reaction sites created by extremely small metal clusters
and metal oxide surfaces.In order to clarify the physical and
chemical properties of such
surface reaction sites and to understand the photocatalytic reaction
mechanism, theoretical research using first principles calculations
will be a powerful technique. For example, the first principles electronic
structure calculations were performed on metallic nickel and nickel
oxide-loaded β-Ga2O3 (Ni–NiO/β-Ga2O3) photocatalytic systems, and it was suggested
that metallic nickel contributes to the hydrogen evolution reaction
in the overall water splitting and nickel oxide would take part in
the oxygen evolution reaction.[17] However,
as far as we know, first principles calculations were not performed
on the surface model of the Ag cluster/β-Ga2O3 system.In this study, in order to understand the photocatalytic
carbon
dioxide reduction over the Ag/β-Ga2O3 photocatalyst,
first principles calculations were performed on the surface model
of the Ag cluster/β-Ga2O3 system for the
first time. It has been reported that the (100) plane is the most
stable in β-Ga2O3,[17,18] thus we chose the β-Ga2O3 (100) surface.
In this study, the surface structure and surface energy were calculated
for two different types of termination of β-Ga2O3 (100) surfaces. Ag (n = 1 to 4) clusters were adsorbed to the stable surface,
and the most stable adsorption structure was determined. Furthermore,
we examined the density of states (DOS) and the spatial distribution
of wave functions for the Ag/β-Ga2O3 system. DOS is a powerful tool to analyze the
energy levels of the system. The region between the top of the valence
band and the bottom of the conduction band are similar to the HOMO
and LUMO, which are related to the photocatalytic reactivity of Ag/β-Ga2O3.[19,20]
Results
and Discussion
First, structural optimization was performed
for the unit cell
of β-Ga2O3 (the left of Figure ). As a result, lattice constants
a, b, c and lattice angle β were calculated to be 12.42, 3.09,
5.88 Å and 103.74°, respectively. These values are almost
the same as previously reported calculation results and in good agreement
with the experimental result.[17,21]
Figure 1
Unit cell of β-Ga2O3 and (100) surface
models with different types of termination.
Unit cell of β-Ga2O3 and (100) surface
models with different types of termination.Structural optimization and surface energy calculations of a β-Ga2O3 (100) surface were carried out for two different
terminations of the (100) plane. One of the termination referred to
as (100)A is shown in the upper right of Figure and the other denoted as (100)B is represented
in the lower right of Figure . The surface energy γ was calculated by the following
equation:where Eslab is
the total energy of the surface slab model, Eperf is the total energy of the unit cell, n is the number of Ga2O3 units included in the
surface slab model, and S is the surface area of
the surface slab model.The surface energies are summarized
in Table . The (100)B
surface was more stable than
the (100)A surface. The values of the surface energy were almost the
same between 8 and 12 atomic layers with the difference within 0.01
J/m2. Therefore, we assumed that the surface energy sufficiently
converged at 12 layers.
Table 1
Surface Energies
of Different Numbers
of Atomic Layers and Termination Types of the β-Ga2O3 (100) Surface
slab
surface energy [J/m2]
(100)A–8 layers
0.783
(100)A–12 layers
0.779
(100)B–8 layers
0.457
(100)B–12 layers
0.449
Subsequently, the (100)B surface with 12 atomic layers was expanded
to (3 × 2) to make the surface model where the Ag (n = 1 to 4) cluster was adsorbed.
The adsorption energy of the Ag cluster Ead(n) was calculated by the
following equation:where Eslab + Ag(n) is the total energy of the Ag cluster-adsorbed
β-Ga2O3 (100)
surface slab model, Eslab is the total
energy of the bare β-Ga2O3 (100) surface
slab model, and EAg(n) is the is the total energy of the optimized Ag cluster in a vacuum.First, the Ag1 cluster
was arranged at six different
adsorption sites on the β-Ga2O3 (100)
surface as initial conditions as shown in Figure . Figure S1 shows
the structures of the Ag1/β-Ga2O3 (100) surface after optimization for each initial conditions. Bonds
are drawn between atoms within a distance of 3.5 Å. The relative
energies with respect to the most stable surface and the adsorption
energies of the Ag1 cluster are summarized in Table S1.
Figure 2
Side (upper) and top (lower) views of
structures of the Ag1/β-Ga2O3 (100) surface at different
sites as initial conditions.
Side (upper) and top (lower) views of
structures of the Ag1/β-Ga2O3 (100) surface at different
sites as initial conditions.For the case of n ≥ 2, initial structures
of Ag/β-Ga2O3 (100) were constructed by adding a Ag atom on one of the possible
adsorption sites near the Ag cluster of the most stable configuration of the Ag/β-Ga2O3 (100) models.
Results of optimized structures and adsorption energies of the Ag cluster (n = 2 to 4) on
the β-Ga2O3 (100) surface are shown in Figures S2–S4 and Tables S2–S4,
respectively.Figure shows the
most stable structures of the Ag/β-Ga2O3 (100) surface (n = 1 to 4).
Ag atoms and the O atoms that are the nearest neighbor to the Ag atoms
are labeled. By comparing with the adsorption energies of the most
stable structures of the Ag/β-Ga2O3 (100) surface (n = 1 to 4)
in Tables S1–S4, we found that the
adsorption energy tends to become less negative with increasing of
Ag atoms while odd number clusters (Ag1 or Ag3) were more stable, suggesting the Ag cluster size dependence of
the adsorption energy.[22]
Figure 3
Most stable structures
of the Ag/β-Ga2O3 (100) surface. (a) n = 1, (b) n = 2, (c) n = 3, and (d) n = 4.
Most stable structures
of the Ag/β-Ga2O3 (100) surface. (a) n = 1, (b) n = 2, (c) n = 3, and (d) n = 4.Tables 345 summarize the bond lengths in the Ag/β-Ga2O3 (100) surfaces. The most
stable
adsorption site for an isolated Ag atom (Figure a) is a hollow site in the middle of four
nearest O atoms with an adsorption energy of −0.694 eV (Ag1(a) in Table S1), resulting in
four Ag–O bonds with a bond length of 2.681–2.753 Å.
When a Ag2 dimer is adsorbed on the Ga2O3 (100) surface, the most energetically favorable structure
(Figure b) consists
of a Ag–Ag bond with a length of 2.644 Å and eight Ag–O
bonds of 2.875–3.353 Å. These Ag–O bonds are longer
than the Ag–O bond length in the Ag1/β-Ga2O3 (100) surface, suggesting that the formation
of the Ag–Ag bond results in the increase of the Ag–O
bond length. The adsorption energy of the Ag dimer structure is calculated
to be −0.452 eV (Ag2(a) in Table S2), less stable than the adsorption energy of the isolated
Ag atom by 0.242 eV. It can be supposed that the weaker adsorption
of the Ag dimer on the β-Ga2O3 surface
results in longer Ag–O bond distances.[23]
Table 2
Bond Length between Silver–Silver
or Silver–Neighboring Oxygen of the Ag1/β-Ga2O3 (100) Surface
bond
length [Å]
Ag(I)–O(I)
2.682
Ag(I)–O(II)
2.751
Ag(I)–O(III)
2.681
Ag(I)–O(IV)
2.753
Table 3
Bond Length
between Silver–Silver
or Silver–Neighboring Oxygen of the Ag2/β-Ga2O3 (100) Surface
bond
length [Å]
Ag(I)–Ag(II)
2.644
Ag(I)–O(I)
3.353
Ag(I)–O(II)
3.300
Ag(I)–O(IV)
3.361
Ag(I)–O(V)
3.295
Ag(II)–O(II)
2.880
Ag(II)–O(III)
3.029
Ag(II)–O(V)
2.875
Ag(II)–O(VI)
3.017
Table 4
Bond Length between Silver–Silver
or Silver–Neighboring Oxygen of the Ag3/β-Ga2O3 (100) Surface
bond
length [Å]
Ag(I)–Ag(II)
2.711
Ag(I)–Ag(III)
2.668
Ag(II)–Ag(III)
2.660
Ag(I)–O(I)
2.277
Ag(I)–O(II)
3.453
Ag(I)–O(III)
3.341
Ag(II)–O(III)
3.339
Ag(II)–O(IV)
2.269
Table 5
Bond Length between Silver–Silver
or Silver–Neighboring Oxygen of the Ag4/β-Ga2O3 (100) Surface
bond
length [Å]
Ag(I)–Ag(II)
2.695
Ag(II)–Ag(III)
2.813
Ag(II)–Ag(IV)
2.681
Ag(III)–Ag(IV)
2.629
Ag(I)–O(I)
3.193
Ag(I)–O(II)
3.362
Ag(I)–O(III)
3.275
Ag(I)–O(IV)
3.445
Ag(II)–O(IV)
2.478
Ag(III)–O(V)
3.324
Ag(III)–O(VI)
3.227
Ag(III)–O(VII)
2.328
As for the lowest energy structure
of the Ag3/Ga2O3 (100) surface (Figure c), the adsorption
energy is calculated to
be −1.654 eV (Ag3(a) in Table S3), suggesting the strong adsorption of the Ag trimer on Ga2O3. Three Ag–Ag bond lengths are evaluated
as 2.660–2.711 Å, which are almost equivalent to those
in the Ag2/β-Ga2O3 (100) surface.
On the other hand, two shorter and three longer Ag–O bonds
are found and the corresponding lengths are 2.269–2.277 Å
and 3.339–3.453 Å, respectively. The short Ag–O
bonds would be involved in the strong adsorption of the Ag trimer
on Ga2O3.The introduction of the extra
Ag atom to the Ag trimer on Ga2O3 suppresses
the adsorption energy to −1.089
eV (Ag4(a) in Table S4) compared
to the adsorbed state of the Ag trimer. Investigating the lowest energy
structures shown in Figure c,d , the difference in Ag–Ag bond lengths is small.
On the other hand, the number ratio of two short Ag–O bonds
of 2.328–2.478 Å to six long Ag–O bonds of 3.193–3.445
Å in Figure d
is 1/3, which is less than 2/5, calculated with the number of short
and long Ag–O bonds in Figure c. The lower ratio of the short Ag–O bond would
be related to the less stable adsorption of the Ag4 cluster
compared to the Ag3 cluster.Total DOS (TDOS) and
projected partial DOS (PDOS) of Ag/β-Ga2O3 (100) systems
are shown in Figure . In the graph, the energy at the upper end of the valence band of
the β-Ga2O3 slab is set to 0 eV. The valence
states of all Ag clusters mixed with the top of the O 2p valence band
of Ga2O3, leading the Fermi level of Ag/β-Ga2O3 to shift
to the bottom of the conduction band.[23] Furthermore, the obvious occupied states of Ag clusters are generated
between the band gap of Ga2O3, and they increase
with the number of Ag atoms. On the other hand, the unoccupied states
of Ag clusters overlapped with the Ga
unoccupied 4s and 4p states. Under photoexcitation, electrons from
the O occupied states move to the Ga unoccupied state. Since the Ga
unoccupied states overlap with the unoccupied Ag states, the excited
electrons generated in the Ga2O3 photocatalyst
can transfer to Ag.[17]Table summarizes some essential values
for each surface model.
Figure 4
DOS of the bare and Ag-adsorbed β-Ga2O3 (100) surface models. (a) β-Ga2O3, (b)
Ag1/β-Ga2O3, (c) Ag2/β-Ga2O3, (d) Ag3/β-Ga2O3, and (e) Ag4/β-Ga2O3. Fermi levels are represented by dashed lines.
Table 6
Summary of the Calculation Results
for Each Surface Modela
surface
adsorption
energy of the Ag cluster [eV]
average length of the Ag–Ag bond [Å]
average length
of the Ag–O bond [Å]
Fermi level [eV]
energy
levels of
occupied states of the Ag cluster [eV]
Ag1/β-Ga2O3
–0.694
2.717
2.227
2.12
Ag2/β-Ga2O3
–0.452
2.644
3.139
1.581
1.48
Ag3/β-Ga2O3
–1.654
2.680
2.936
2.262
0.22
Ag4/β-Ga2O3
–1.089
2.705
3.079
1.858
0.14
0.72
1.82
Fermi levels and
energy levels of
occupied states of Ag clusters are relative to the valence band maximum
level of β-Ga2O3.
DOS of the bare and Ag-adsorbed β-Ga2O3 (100) surface models. (a) β-Ga2O3, (b)
Ag1/β-Ga2O3, (c) Ag2/β-Ga2O3, (d) Ag3/β-Ga2O3, and (e) Ag4/β-Ga2O3. Fermi levels are represented by dashed lines.Fermi levels and
energy levels of
occupied states of Ag clusters are relative to the valence band maximum
level of β-Ga2O3.In Figure , we
visualize spatial distribution of the electronic states by the isosurfaces
at 0.005 Å–3 of the norm of the wave functions
with the energy range from the Fermi level to the energy state 0.5
eV below the Fermi level. As shown in the figure, the highest valence
bands are relatively localized on Ag1, Ag2,
and Ag4 clusters while they extend to the Ga2O3 surface in the Ag3/β-Ga2O3 (100) system. Since the electrons are localized on
Ag1, Ag2, and Ag4 clusters, these
Ag clusters would be effective CO2 adsorption sites.[24]
Figure 5
Side (upper) and top (lower) views of the charge density
isosurface
for the energy level between the Fermi energy and the energy −0.5
eV below from the Fermi energy of the Ag/β-Ga2O3 (100) system.
Side (upper) and top (lower) views of the charge density
isosurface
for the energy level between the Fermi energy and the energy −0.5
eV below from the Fermi energy of the Ag/β-Ga2O3 (100) system.Figure shows
isosurfaces
of electron probability densities for the localized bands having higher
energy states than the valence states, namely, O 2p orbitals, of the
β-Ga2O3 slab in the Ag4/β-Ga2O3 (100) system. Figure shows the schematic diagram of their band
structure of the Ag4/β-Ga2O3 (100) system. In this system, the highest occupied states are localized
on the Ag4 cluster, and the occupied states derived from
the Ag4 cluster would contribute to the local excitation
from Ag clusters to the interface between Ag clusters and Ga2O3.[25] It should be noted that
our calculations based on the density functional theory underestimate
the band gap compared to the experiment. The quantitative values of
the energy positions of the gap states shown in Figure will be changed if more accurate calculations
such as the hybrid density functional ones are performed. However,
the characteristics of the chemical bonding between Ga2O3 and Ag clusters will remain the same regardless of
the formalism of the first principles calculations.
Figure 6
Side (upper) and top
(lower) views of the charge density isosurface
for the internal band between the band gap of the Ag4/β-Ga2O3 (100) system. Relative energies from the valence
band maximum level of β-Ga2O3 are written
at the bottom of each graph.
Figure 7
Schematic
diagram of the band structure of the Ag4/β-Ga2O3 (100) system.
Side (upper) and top
(lower) views of the charge density isosurface
for the internal band between the band gap of the Ag4/β-Ga2O3 (100) system. Relative energies from the valence
band maximum level of β-Ga2O3 are written
at the bottom of each graph.Schematic
diagram of the band structure of the Ag4/β-Ga2O3 (100) system.These calculation results correspond to the experimental ones obtained
in our previous study,[10,11] i.e., Ag/β-Ga2O3 photocatalysts were examined for photocatalytic reduction
of CO2 with water, and the effects of structural and chemical
states of the Ag cocatalyst on the photocatalytic reactivity was investigated
by studying TEM images, DR UV–vis, and XANES spectra. In particular,
Ag L3-edge XANES and O K-edge XANES spectra suggested a
strong interaction between 1 nm sized Ag clusters and the Ga2O3 surface, which supports the electron transfer between
them. In addition, our in situ FT-IR measurements also revealed that
the effective electron transfer can promote the reduction of CO2 adsorbates to the reaction intermediate species on the perimeter
of Ag clusters.In this study, the electronic structure analyses
suggest that the
loading of Ag clusters enhances the photocatalytic performance by
transferring the excited electrons generated in the Ga2O3 photocatalyst to Ag clusters due to the overlap of
unoccupied states of Ag clusters and
Ga as well as the shift of the Fermi level to the conduction band
of Ga2O3. It was also revealed that occupied
electronic states of Ag clusters formed in the band gap may enable
local excitation from Ag clusters to the interface between Ag clusters
and Ga2O3. Excited electrons toward Ag clusters or the perimeter of the Ag-Ga2O3 interface would be used to reduce CO2 adsorbates
to the reaction intermediate species and which should enhance the
photocatalytic performance.
Conclusions
We performed
first principles calculations to study the atomic
and electronic structures of the Ag/β-Ga2O3 surface in order to clarify the role of adsorbed
Ag clusters in the catalysis of carbon
dioxide reduction. Surface models of Ag/β-Ga2O3 (n = 1 to 4)
systems were built for first principles electronic structure calculations.
The adsorption energy tended to increase with increasing of Ag atoms,
while odd number clusters (Ag1 or Ag3) were
more stable.In the electronic structure analysis, the valence
states of all
Ag clusters mixed with the top of the O 2p valence band of Ga2O3, leading the Fermi level of Ag/β-Ga2O3 to shift to the bottom
of the conduction band. It was also revealed that the unoccupied states
of Ag clusters overlapped with the Ga
unoccupied states. Therefore, the excited electrons generated in the
Ga2O3 photocatalyst can transfer to Ag efficiently.
Regarding Ag4/β-Ga2O3, occupied
states derived from Ag4 clusters were formed in the band
gap and right above the valence band of β-Ga2O3, which may enable local excitation from Ag clusters to the
interface between Ag clusters and Ga2O3. These
calculation results suggest the loading of Ag clusters would enhance
the photocatalytic performance, corresponding to the experimental
fact that Ga2O3 with small Ag clusters showed
high activity for CO2 reduction.
Calculation
Methods
We obtain total energies and energy-minimized configurations
using
first principles calculations based on the plane-wave basis sets and
the projector augmented wave method[26] implemented
in the VASP code.[27] The Perdew–Burke–Ernzerhof
generalized gradient approximation (PBE-GGA) is used for the exchange-correlation
functional.[28] For all calculations, the
cutoff energy of the plane waves was set to be at 500 eV. Structure
optimization calculations were performed until all forces acting on
atoms of calculated structure models were less than 0.02 eV/Å.
The valence electron configurations are 3d10 4s2 4p1 for gallium, 2s2 2p4 for oxygen,
and 4d10 5s1 for silver.The calculation
of the β-Ga2O3 unit
cell was performed with 2 × 6 × 4 k-point
meshes of the Brillouin zone sampling based on the Monkhorst-Pack
scheme.[29] A surface slab model was used
for calculations of the β-Ga2O3 (100)
surface. A (1 × 1) slab model containing 8 or 12 atomic layers
in the (100) direction with a 20 Å vacuum spacing was constructed
from the optimized β-Ga2O3 unit cell.
For the calculation of the surface where the Ag cluster (n = 1 to 4) was adsorbed, (3 ×
2) supercells of the surface slab model were constructed. The mesh
sizes of the Brillouin zone sampling were 6 × 4 × 1 and
2 × 2 × 1 in the clean surface model and the Ag-absorbed
surface model, respectively. The two of the central atomic layers
of Ga2O3 were fixed for all surface slab model
calculations. The energy of isolated Ag clusters in vacuum was used to calculate the adsorption energy of
Ag clusters. In this study, all crystal
and surface models are visualized by VESTA.[30]
Authors: James L White; Maor F Baruch; James E Pander Iii; Yuan Hu; Ivy C Fortmeyer; James Eujin Park; Tao Zhang; Kuo Liao; Jing Gu; Yong Yan; Travis W Shaw; Esta Abelev; Andrew B Bocarsly Journal: Chem Rev Date: 2015-10-07 Impact factor: 60.622