We experimentally investigate the properties of one-dimensional quantum rings that form near the surface of nanowire quantum dots. In agreement with theoretical predictions, we observe the appearance of forbidden gaps in the evolution of states in a magnetic field as the symmetry of a quantum ring is reduced. For a twofold symmetry, our experiments confirm that orbital states are grouped pairwise. Here, a π-phase shift can be introduced in the Aharonov-Bohm relation by controlling the relative orbital parity using an electric field. Studying rings with higher symmetry, we note exceptionally large orbital contributions to the effective g-factor (up to 300), which are many times higher than those previously reported. These findings show that the properties of a phase-coherent system can be significantly altered by the nanostructure symmetry and its interplay with wave function parity.
We experimentally investigate the properties of one-dimensional quantum rings that form near the surface of nanowire quantum dots. In agreement with theoretical predictions, we observe the appearance of forbidden gaps in the evolution of states in a magnetic field as the symmetry of a quantum ring is reduced. For a twofold symmetry, our experiments confirm that orbital states are grouped pairwise. Here, a π-phase shift can be introduced in the Aharonov-Bohm relation by controlling the relative orbital parity using an electric field. Studying rings with higher symmetry, we note exceptionally large orbital contributions to the effective g-factor (up to 300), which are many times higher than those previously reported. These findings show that the properties of a phase-coherent system can be significantly altered by the nanostructure symmetry and its interplay with wave function parity.
The particle in a ring represents
a standard textbook problem in quantum mechanics[1−3] and is a case
where the topology modifies the properties of the system. Under a
varying magnetic field (B), a phase-coherent quantum
ring displays the Aharonov–Bohm (AB) effect,[4] where states with different angular momentum signs periodically
cross in energy with the enclosed flux. Coherent rings, in both normal
and superconducting states, have been important tools when studying
how the quantum mechanical phase is affected when a system undergoes
changes.[5−13] By inserting quantum dots (QDs) in one or both arms of a ring, the
phase-coherence of electron tunnelling can be studied[5,9,11] as well as the effect of single
spins on the phase difference between superconducting macroscopic
states.[12,13]In this work, we use quantum rings
to study the interplay of the
wave function parity with the symmetry of a system. While an ideal
quantum ring has perfect and infinite rotational symmetry, any real
ring-like structure will display imperfections. In a number of theoretical
works on semiconductor-based quantum rings, it was shown that a reduction
in the symmetry of a ring (or tube) results in states undergoing avoided
crossings as a function of the magnetic field, leading to energy gaps
in the spectrum.[14−21] In essence, a system with an n-fold rotational
symmetry of the confinement potential should show orbital states in
groups of n separated by gaps close to which the
orbital angular momentum approaches zero.[15] Away from these energy gaps, the states are ring-like and show a
significant orbital angular momentum.Pham et al.[22] recently studied hexagonal
rings formed by the presence of indium adatoms on an InAs surface
and found a lifting of orbital degeneracies consistent with a reduced
symmetry. Zhu et al.[14] calculated the properties
of quantum rings with two symmetric barriers (n =
2) and predicted an electronic structure of orbital states grouped
in pairs. This particular case is, however, very different from higher
ring symmetries[15] in that it has no ring-like
states at zero magnetic flux (ϕ) for combinations of orbitals
with the same parity, whereas different parity combinations are predicted
to be ring-like. At half a flux quantum, ϕ = 0.5 h/e, the effect
of parity was predicted to reverse, resulting in a π-phase shift
in the AB effect. Indeed, the ring-like nature of such even–odd
parity combinations at ϕ = 0 was recently experimentally confirmed
by Potts et al.[23] and was explained by
a cancellation of the overlap integrals at the two barriers.In this work, we have experimentally and theoretically examined
the AB effect in structures similar to those in ref (23), where phase-coherent
quantum rings form near the surface of nanowires with epitaxially
defined QDs. Using transport measurements, we find AB flux periodicities
corresponding to rings that have an approximately 10 nm smaller radius
than the nanowire, consistent with a surface accumulation layer of
electrons.[24] We realize one-dimensional
rings with different symmetries and observe a huge orbital contribution
to the electron g-factor for high symmetry cases.
For the lowest symmetry (n = 2), corresponding to
a pair of QDs connected in two points, we confirm that orbitals are
grouped pairwise in a B-field. By controlling the orbital
parity in each QD, we also find the predicted π-phase shift
in the AB oscillations, which stems from a B-field periodic
reversal in the orbital requirements for when the overlap integrals
cancel. The experimental results were reproduced with tight-binding
calculations where the different ring symmetries were studied under
electric and magnetic fields.Two different types of QD ring
structures (A and B) are investigated
in this work, both of which are formed by controlling the crystal
structure of InAs nanowires during epitaxial growth. Sample A has
a QD of pure InAs, whereas B has an additional thin outer shell of
InAsSb. Surface-related band bending in InAs[25] and InAsSb[24] is key to the formation
of the ring-like states that we observe. The interior of the QD has
no filled states due to the strong confinement, while electrons can
still accumulate near the surface.[23] However,
the resulting ring-like potential around the nanowire circumference
is sensitive to perturbations, especially in a low carrier concentration
limit, resulting in localized electron pockets.[26] The purpose of including two types of samples in this study,
with a second sample having Sb in the InAs surface layer, is twofold,
first to enhance the surface electron concentration as predicted from
an Sb-induced conduction band bowing[27] and
thereby screen effects of symmetry-breaking defects and second to
further increase the spin–orbit interaction (SOI).Nanowires
were grown using metalorganic vapor-phase epitaxy from
Au seeds arranged in periodic patterns, where the crystal structure
of InAs was controlled as reported in ref (23). They were designed to have long outer contact
segments with zinc blende (ZB) structure with a high carrier concentration.
These segments connect to a pair of tunnel barriers with wurtzite
(WZ) structure, which in turn sandwich a very short (4–5 nm)
middle ZB segment to provide strong confinement there (QD type A, Figure b). The growth of
the second sample (QD type B, Figure a and c) was terminated with an InAsSb growth step,
which added an approximately 4 nm shell of InAsSb and an axial segment
near the top of the nanowires compared to the reference NWs.[28] Energy-dispersive X-ray spectroscopy performed
near the surface of the zinc blende segments gave an InAs0.8Sb0.2 composition. For growth details, see the Supporting Information. Source and drain contacts
to the nanowires were fabricated using Ti/Al and Ti/Au (type A sample)
or Ni/Au only (type B).[26] The contact layout
also included side-gating electrodes to control the electrostatic
potential within the central ZB segment. Transport measurements were
carried out in a dilution refrigerator at an electron temperature
<100 mK, where the magnetic field direction and strength were controlled
with a vector magnet.
Figure 1
(a) High-resolution, high angle annular dark field, and
dark field
(inset) transmission electron microscopy (TEM) images of a type B
nanowire showing the wurtzite (WZ) barriers around the zinc blende
(ZB) quantum dot segment. (b) Scanning electron micrograph (SEM) of
the type A InAs nanowire device, with source-drain and side-gating
electrodes. (c) SEM of the type B InAs–InAsSb core–shell
nanowire device.
(a) High-resolution, high angle annular dark field, and
dark field
(inset) transmission electron microscopy (TEM) images of a type B
nanowire showing the wurtzite (WZ) barriers around the zinc blende
(ZB) quantum dot segment. (b) Scanning electron micrograph (SEM) of
the type A InAs nanowire device, with source-drain and side-gating
electrodes. (c) SEM of the type B InAs–InAsSb core–shell
nanowire device.We start by presenting
the results of the type B sample, which
could be electrostatically tuned to become a high symmetry ring. The
overview plots in Figure a show the conductance in the QD as a function of the two
side-gate voltages, VL and VR. The lines here correspond to transport through the
QD ground state, where the electron number increases in steps of one
for each line at higher VL,R going from
approximately 18 to 36. We note that each line pair represents a spin-degenerate
orbital separated by the QD charging energy, E, and that two line pairs here frequently
form groups of four states. The absence of a honeycomb structure and
the almost similar slopes of the conductance lines support that transport
occurs trough a single QD in this regime.[7] Also shown in Figure a is the effect of a B-field of 0.2 T applied parallel
(B||) to the nanowire, which significantly
changes the state energies.
Figure 2
Effects of B-fields on orbital
and spin states in
QD rings with different symmetries (n). (a) Conductance
of a QD ring (sample type B) as a function of VL,R at B = 0 (left) and B||= 0.2 T (right) for a back-gate voltage, VBG = 3 V, and source-drain voltage, VSD = 0.1 mV. (b) Conductance along the red line in panel
a vs B⊥ and B||. (c) Differential conductance vs B|| in the one-electron regime along the green bar in panel
b. The inset shows schematically how the four nearly degenerate spin
and orbital states evolve with B||, where
it is possible to identify EZ and extract gorb from EZ = gorbμBB||. (d) Conductance of a double QD ring (sample type A) for B = 0 and B|| = 0.7 T at VBG = 0 V and VSD = 0.5 mV. (e) Schematic for six consecutive orbital crossings at
ϕ = 0 and 0.5 h/e. Orbital parity and threaded flux (i, integer) determine whether each crossing is exact or
avoided. The small inset shows an overlay of data from panel d at
the two fields.
Effects of B-fields on orbital
and spin states in
QD rings with different symmetries (n). (a) Conductance
of a QD ring (sample type B) as a function of VL,R at B = 0 (left) and B||= 0.2 T (right) for a back-gate voltage, VBG = 3 V, and source-drain voltage, VSD = 0.1 mV. (b) Conductance along the red line in panel
a vs B⊥ and B||. (c) Differential conductance vs B|| in the one-electron regime along the green bar in panel
b. The inset shows schematically how the four nearly degenerate spin
and orbital states evolve with B||, where
it is possible to identify EZ and extract gorb from EZ = gorbμBB||. (d) Conductance of a double QD ring (sample type A) for B = 0 and B|| = 0.7 T at VBG = 0 V and VSD = 0.5 mV. (e) Schematic for six consecutive orbital crossings at
ϕ = 0 and 0.5 h/e. Orbital parity and threaded flux (i, integer) determine whether each crossing is exact or
avoided. The small inset shows an overlay of data from panel d at
the two fields.Figure b shows
the B-field evolution of the conductance associated with
ground-state transport for fields applied both parallel (B||) and perpendicular (B⊥) to the nanowire axis, which was obtained along the indicated gate
vector in Figure a.
The energy axis (μeff) is derived from an extraction
of the gate-lever arm of Coulomb diamonds along that vector (Supporting Information). We observe that the
level structure and B-field evolution in Figure b is similar to that found
in carbon nanotube QDs, where spin and orbital degrees of freedom
result in a fourfold degeneracy of states and where the energy splitting EZ = B strongly depends on the B-field direction. This anisotropy comes from the effective g-factor given by g* = gspin ± gorb. Here, gspin is related to the spin magnetic moment,
whereas gorb is related to the orbital
magnetic moment, which couples only to the B-field component
that threads the ring. From the shift in ground state energies we
obtain gorb = 290 as well as an upper
limit for |gspin| of approximately 15.These very large values result from the scaling of gorb with the orbital quantum number l according to 2(m0/m*)l, where m* is the effective
electron mass.[29] We note that the QD here
holds roughly 25 electrons, which would imply l ≈ 6 in a perfect 1D ring picture. The strong confinement from the
axial crystal phase segments is a key reason to why it is possible
to track orbital states over such large energies (>10 meV). In
carbon
nanotube QDs, the corresponding axial confinement is generally much
weaker, resulting in low-energy axial excitation modes.At B|| = 0.6 T, the ground states change
as orbitals with a different angular momentum sign become more energetically
favorable. From the orbital crossing we can extrapolate an AB periodicity
of ΔB = 1.2 T, which corresponds to a ring
diameter of DAB = 66 nm using ΔBA = h/e, where A is the enclosed
loop area. Based on a physical NW diameter of 90 nm (Figure c), we note that the ring radius
is about 10 nm smaller than the NW radius.Figure c shows
the excited state spectrum for small values of B|| along the green bar in Figure b. We refer to this as a single-electron
regime, thus neglecting filled orbitals. The expected fourfold degeneracy
of spin and orbital states at B = 0 is broken here by
the combination of an SOI and disorder (δ); thus, the electronic
structure is very similar to that of carbon nanotube QDs.[30] The consequence of the large g value is that the two lowest energy
states already have the same orbital angular momentum sign for B|| > 30 mT. We can also extract the effective g-factors from the excited-state spectrum using the splitting
of the Kramer’s pairs in Figure c (EZ,1 and EZ,2 in the inset). Assuming a negative gspin, the effective g-factors corresponding
to EZ,1 and EZ,2 are 275 and −300, respectively, which are consistent with gspin = −12 and gorb = 290 extracted from the shift in the ground state energies
in Figure b.The avoided crossing, δ = 330 μeV, indicated in Figure c is a consequence
of a disorder that couples electrons of the same spin from different
orbitals. Based on an energy gap ΔE = 470 μeV
at B = 0 and ΔE2 =
δ2 + SOI2, we extract SOI = 330 μeV. We
note that this value is larger than the corresponding value extracted
in a similar structure consisting of InAs only.[23] This may be related to a non-negligible tail in the electron
distribution that resides in the thin InAsSb shell[31] where SOI is strong.Next, we investigate a nanowire
of type A, which has two doubly
connected QDs that result in a reduced ring symmetry (n = 2) with important consequences for the magnetic-field-dependence
of the orbital states. Plotting the conductance in this sample as
a function of VL and VR reveals sets of lines with two different slopes (Figure d). The conductance
pattern is explained by transport through a double QD, which is parallel-coupled
to a source and a drain.[26,32] The two side-gates
have different electrostatic couplings to each QD, and orbitals belonging
to different QDs therefore cross in energy and interact. Similar to
the case in Figure a, each orbital is spin-degenerate and therefore has a conductance
replica at higher energy, separated by a charging energy.The
numbering of the orbital crossings indicated in the cartoon
in Figure e is based
on an overview measurement provided in the Supporting Information. We will focus on six consecutive orbital crossings
for which the orbital structure and behavior with the electric field
are predictable and where the electron numbers range from 12 to 20.
However, we note that the double QD is not ideal over a wider span
of gate voltages such that the selective gate coupling to some orbitals
is not constant over the entire measurement range.When orbital
pairs align in energy, it is clear that half the crossings
are exact, whereas the other half are seemingly strongly tunnel-coupled,
as indicated by the avoided level crossings. This observation is in
line with the findings in ref (23), where exact crossings are explained by a cancellation
of the hybridization energy due to the different signs of the overlap
integrals at the two tunnel barriers within the ring. This only occurs
for cases where an odd orbital aligns in energy with an even orbital,
corresponding to a difference in parity. In contrast, for even–even
and odd–odd combinations with the same parity, the overlap
integrals do not cancel, and an energy gap forms in a double QD ring.
Due to this parity requirement, the conductance lines in Figure d form an alternating
checkerboard pattern of the two crossing types. An identical pattern
was predicted by Zhu et al.,[14] where orbital
energies were plotted as a function of the angle between the two barriers
in the ring, thus varying the relative sizes of the ring segments
to fit different excitations. In our case, we believe that the ring
segment sizes are approximately fixed and that the wave function parities
are controlled by electrostatic shifts in energy.Interestingly,
the pattern is completely reversed upon the application
of a magnetic field component B = 0.7 T through the ring that corresponds to half a magnetic
flux quantum, ϕ = 0.5 h/e (as shown later). Orbital crossings
that were exact are now avoided, and vice versa, such that the parity
requirement is the opposite. However, we note that away from orbital
crossings the individual QD orbitals are not significantly shifted
by the B-field, as was the case for the QD of type B,
indicating that these localized states have no, or small, orbital
momentum contribution to g*. This is highlighted
in the cartoon in Figure e and exemplified by the inset representing a local overlay
of two measurements from Figure d.To explain how a reduced ring symmetry gives
rise to the experimental
results, we calculated the evolution of states as a function of the
magnetic field for the cases of perfect, four-barrier, and double-barrier
ring symmetries, as shown in Figure a–c, respectively. The theoretical calculations
involved tight-binding discretization of a circular 2D QD, which was
used to simulate the different ring types with the inclusion of appropriate
periodic potentials as well as an external electric field. For details
on the model, see the Supporting Information.
Figure 3
Calculation of electron energies as a function of B-field
for quantum rings with different symmetries. (a) A perfect
quantum ring in a 1D limit, here modeled as a 2D ring in an energy
range with no transverse excitations. (b) Ring with four barriers
(n = 4), which give rise to large avoided crossings
and a fourfold grouping of orbitals. (c) Ring with two barriers (n = 2), which has no ring-like states (⟨L⟩ ≈ 0) at B = 0. (d and e) Effect of the
relative orbital parity for n = 2, where a difference
in parity results in a π-shift in the AB effect compared to
the same parity. We note that the value of ϕ is inferred from
the orbital crossings with a magnetic field, which in a non-1D system
depends on the energy.
Calculation of electron energies as a function of B-field
for quantum rings with different symmetries. (a) A perfect
quantum ring in a 1D limit, here modeled as a 2D ring in an energy
range with no transverse excitations. (b) Ring with four barriers
(n = 4), which give rise to large avoided crossings
and a fourfold grouping of orbitals. (c) Ring with two barriers (n = 2), which has no ring-like states (⟨L⟩ ≈ 0) at B = 0. (d and e) Effect of the
relative orbital parity for n = 2, where a difference
in parity results in a π-shift in the AB effect compared to
the same parity. We note that the value of ϕ is inferred from
the orbital crossings with a magnetic field, which in a non-1D system
depends on the energy.We first note that a
symmetry reduction introduces a grouping of
orbital and spin states with the magnetic field according to the symmetry,
as previously predicted.[15] Notably, no
ring-like states are observed at B = 0 in the lowest
(n = 2) symmetry case when both ring-halves have
the same parity (Figure c). However, under an electric field, which provides a further symmetry-breaking
effect, a different orbital parity can be introduced. Figure d and e show the evolution
of orbital pairs where the half-rings have different (d) and the same
(e) orbital parities (orbitals 4,3 in panel d and orbitals 4|,4 in
panel e). It is clear that the AB pattern experiences a π-phase
shift such that ring-like states with large ⟨L⟩ appear at ϕ = 0 when the parity is different and also
at ϕ = 0.5 h/e for the case of the same parity. For the coming
comparison with the experiment, we here used a nonparallel direction
of the B-field (α = 50° from B||), which resulted in a weaker orbital splitting.In the experiment, the conductance lines are separated not only
by the energies of the single-particle orbitals but also by a charging
energy EC. Therefore, we next introduce
such an additional splitting EC between
the calculated single-particle orbital energies (this corresponds
to the result of the constant interaction model for a QD). First,
the ideal ring case is shown in Figure a, whereas in Figure b we replot the experimental data for the type B nanowire
from Figure b as a
comparison. We note that overall the experimental ring looks very
similar to the ideal ring, but with slightly rounded features at B|| = 0.6 T indicative of small avoided crossings.
Since we cannot induce uniform changes in the ring potential with
only two side-gates, it is unclear whether the experimental
ring has an inherent sixfold symmetry from the hexagonal cross-section
(Figure c). However,
we note that some symmetry-reducing barriers must be present as we
observe similar ⟨L⟩ values in Figure a and b in a situation
where the experiment has more electrons than the model.
Figure 4
(a) Evolution
of states with parallel B-field in a
perfect ring (DAB = 66 nm), including
a charging energy, EC, extracted from
the corresponding experiment. (b) Replotting of data in Figure b as a comparison, where we
find that the QD can behave like a high-symmetry ring within a range
of electric fields. (c and d) Charging energy (EC) added to the energies in Figures d and e, respectively, for a double-barrier
ring. (e and f) Experiment showing the evolution of ground state energies
with Bα when passing through two
consecutive honeycombs of different relative orbital parity as shown
in the inset (cropped from Figure d). We note a π-phase shift resulting from the
change in relative parity, and the presence of ring-like states at B = 0 for the case of different orbital parity. A B-field vector misaligned from the NW long axis was used (α
= 50°), which allows access to stronger fields in the setup.
From the shift in GS energy, we can extract a maximum |g*|= 80.
(a) Evolution
of states with parallel B-field in a
perfect ring (DAB = 66 nm), including
a charging energy, EC, extracted from
the corresponding experiment. (b) Replotting of data in Figure b as a comparison, where we
find that the QD can behave like a high-symmetry ring within a range
of electric fields. (c and d) Charging energy (EC) added to the energies in Figures d and e, respectively, for a double-barrier
ring. (e and f) Experiment showing the evolution of ground state energies
with Bα when passing through two
consecutive honeycombs of different relative orbital parity as shown
in the inset (cropped from Figure d). We note a π-phase shift resulting from the
change in relative parity, and the presence of ring-like states at B = 0 for the case of different orbital parity. A B-field vector misaligned from the NW long axis was used (α
= 50°), which allows access to stronger fields in the setup.
From the shift in GS energy, we can extract a maximum |g*|= 80.Next, we go back to the type A
nanowire and compare experiments
with simulations that include EC, as shown
in Figure c–f.
Similar to Figure b, we plot the conductance of the ground states as a function of
μeff and the B-field; here, however,
we are comparing measurements through two consecutive honeycombs.
The experiments confirm the predicted π-phase shift in the AB
effect when changing the relative orbital parities. In both cases
we also note that ring formation is periodic in Bα (α = 50° from B||) with a period of Bα =
2.3 T (B|| = 1.5 T), which corresponds
to a ring diameter of DAB = 59 nm. With
a physical diameter of 80 nm, we note a similar 10 nm difference in
radius as that for the type B case, which points to a substantial
weight of the wave function rather close to the NW surface. This direct
correlation of ring and nanowire diameters, and a DAB that seems to be independent of electron number within
the range of Figure b, supports the presence of a surface electron accumulation layer.[24]In conclusion, we
have engineered one-dimensional
rings in QDs where electrons gain an exceptionally large orbital angular
momentum. Due to a strong phase coherence in the system, uncommon
for nonsuperconducting rings, we can probe theoretical predictions
on the effects of symmetry and parity of a quantum ring. In agreement
with the predictions, we find that rings composed of two doubly connected
QDs experience an Aharonov–Bohm period similar to that of a
sample with a higher symmetry but with an evolution of states with B-field that is very different. The resulting orbitals are
grouped according to the symmetry (n = 2), with a
phase determined by the orbital parities of the QDs. By modifying
the material of the ring, here attempted by introducing an outer shell
with a reduced band gap, an even more efficient manipulation of electronic
states should be possible.
Authors: Jorden A van Dam; Yuli V Nazarov; Erik P A M Bakkers; Silvano De Franceschi; Leo P Kouwenhoven Journal: Nature Date: 2006-08-10 Impact factor: 49.962