Literature DB >> 34825645

Journey of MOSFET from Planar to Gate All Around: A Review.

Krutideepa Bhol1, Biswajit Jena2, Umakanta Nanda1.   

Abstract

With the continuous miniaturization in device dimension to reach the expectation raised by semiconductor users, the shape and size of the MOSFET are changing periodically. The journey started in the year 1960, reached the milestone, and still going on to create history. Due to continuous downscaling, the device dimensions have already reached the critical limit and further miniaturization is a challenge. As a result of which some unwanted effects were raised unknowingly to suppress the device performances while entering into nanoscale. To overcome these kinds of barriers, different device architectures were proposed to keep the journey on. This paper focused on those types of advanced structures in MOSFET, which kept Moore's law alive. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.net.

Entities:  

Keywords:  FinFET; GAA; MOSFET; NANO; SCE; quantum

Mesh:

Year:  2022        PMID: 34825645     DOI: 10.2174/1872210515666210719102855

Source DB:  PubMed          Journal:  Recent Pat Nanotechnol        ISSN: 1872-2105            Impact factor:   1.952


  1 in total

1.  A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs.

Authors:  He Cheng; Zhijia Yang; Chao Zhang; Chuang Xie; Tiefeng Liu; Jian Wang; Zhipeng Zhang
Journal:  Nanomaterials (Basel)       Date:  2022-09-28       Impact factor: 5.719

  1 in total

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