| Literature DB >> 3478709 |
C M Bachmann1, L N Cooper, A Dembo, O Zeitouni.
Abstract
We present a relaxation model for memory based on a generalized coulomb potential. The model has arbitrarily large storage capacity and, in addition, well-defined basins of attraction about stored memory states. The model is compared with the Hopfield relaxation model.Mesh:
Year: 1987 PMID: 3478709 PMCID: PMC299332 DOI: 10.1073/pnas.84.21.7529
Source DB: PubMed Journal: Proc Natl Acad Sci U S A ISSN: 0027-8424 Impact factor: 11.205