| Literature DB >> 34385327 |
Niloufar Nilforoushan1, Michele Casula2, Adriano Amaricci3,4, Marco Caputo5,6, Jonathan Caillaux5, Lama Khalil5,7, Evangelos Papalazarou5, Pascal Simon5, Luca Perfetti8, Ivana Vobornik3, Pranab Kumar Das3,9, Jun Fujii3, Alexei Barinov6, David Santos-Cottin10, Yannick Klein10, Michele Fabrizio4, Andrea Gauzzi10, Marino Marsi1.
Abstract
Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step toward the realization of novel concepts of electronic devices and quantum computation. By means of Angle-Resolved Photo-Emission Spectroscopy (ARPES) experiments and ab initio simulations, here, we show that Dirac states can be effectively tuned by doping a transition metal sulfide, [Formula: see text], through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge-transfer gap of [Formula: see text] across its phase diagram, lead to the formation of Dirac lines, whose position in k-space can be displaced along the [Formula: see text] symmetry direction and their form reshaped. Not only does the doping x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making [Formula: see text] a model system to functionalize Dirac materials by varying the strength of electron correlations.Entities:
Keywords: Dirac semi-metals; correlated electronic systems; functional topological materials
Year: 2021 PMID: 34385327 PMCID: PMC8379913 DOI: 10.1073/pnas.2108617118
Source DB: PubMed Journal: Proc Natl Acad Sci U S A ISSN: 0027-8424 Impact factor: 11.205