Literature DB >> 34355435

Metavalent Bonding in Crystalline Solids: How Does It Collapse?

Ludovica Guarneri1, Stefan Jakobs1, Alexander von Hoegen1, Stefan Maier1, Ming Xu1, Min Zhu1, Sophia Wahl1, Christian Teichrib1, Yiming Zhou1, Oana Cojocaru-Mirédin1, Mohit Raghuwanshi1, Carl-Friedrich Schön1, Marc Drögeler2, Christoph Stampfer2,3, Ricardo P S M Lobo4,5, Andrea Piarristeguy6, Annie Pradel6, Jean-Yves Raty7, Matthias Wuttig1,3,8.   

Abstract

The chemical bond is one of the most powerful, yet much debated concepts in chemistry, explaining property trends in solids. Recently, a novel type of chemical bonding was identified in several higher chalcogenides, characterized by a unique property portfolio, unconventional bond breaking, and sharing of about one electron between adjacent atoms. This metavalent bond is a fundamental type of bonding in solids, besides covalent, ionic, and metallic bonding, raising the pertinent question as to whether there is a well-defined transition between metavalent and covalent bonds. Here, three different pseudo-binary lines, namely, GeTe1- x Sex , Sb2 Te3(1- x ) Se3 x , and Bi2-2 x Sb2 x Se3 , are studied, and a sudden change in several properties, including optical absorption ε2 (ω), optical dielectric constant ε∞ , Born effective charge Z*, electrical conductivity, as well as bond breaking behavior for a critical Se or Sb concentration, is evidenced. These findings provide a blueprint to experimentally explore the influence of metavalent bonding on attractive properties of phase-change materials and thermoelectrics. Particularly important is its impact on optical properties, which can be tailored by the amount of electrons shared between adjacent atoms. This correlation can be used to design optoelectronic materials and to explore systematic changes in chemical bonding with stoichiometry and atomic arrangement.
© 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Entities:  

Keywords:  atom probe tomography; bond breaking; materials by design; metavalent bonding; phase-change materials; property maps; thermoelectrics; topological insulators

Year:  2021        PMID: 34355435     DOI: 10.1002/adma.202102356

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  1 in total

1.  Designing Conductive-Bridge Phase-Change Memory to Enable Ultralow Programming Power.

Authors:  Zhe Yang; Bowen Li; Jiang-Jing Wang; Xu-Dong Wang; Meng Xu; Hao Tong; Xiaomin Cheng; Lu Lu; Chunlin Jia; Ming Xu; Xiangshui Miao; Wei Zhang; En Ma
Journal:  Adv Sci (Weinh)       Date:  2022-01-14       Impact factor: 16.806

  1 in total

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