| Literature DB >> 34349914 |
Yang Liu1, Xin Xiao1, You Ran1, Zhengyang Bin1, Jingsong You1.
Abstract
The establishment of a simple molecular design strategy to realize red-shifted emission while maintaining good color purity for multi-resonance induced thermally activated delayed fluorescent (MR-TADF) materials remains an appealing yet challenging task. Herein, we demonstrate that the attachment of a cyano (CN) functionality at the lowest unoccupied molecular orbital location of the MR-Entities:
Year: 2021 PMID: 34349914 PMCID: PMC8278966 DOI: 10.1039/d1sc02042k
Source DB: PubMed Journal: Chem Sci ISSN: 2041-6520 Impact factor: 9.825
Fig. 1Molecular design concept and the summary of molecular structures, emission wavelengths and FWHMs of BCz-BN, BBCz-Y, CN-BCz-BN and CNCz-BNCz.
Scheme 1Synthetic route to CNCz-BNCz. Reaction conditions: (a) (i) tert-butylcarbazole, NaH, N,N-dimethylformamide, rt, 0.5 h; (ii) 1,4-dibromotetrafluorobenzene, 140 °C, 12 h. (b) (i) n-BuLi, toluene, −60 °C, 1 h; (ii) BBr3, −40 °C to 0 °C, 1 h; (iii) EtN(i-Pr)2, 120 °C, 8 h. (c) (i) n-BuLi, tetrahydrofuran, −78 °C, 1 h; (ii) dimethylmalononitrile (DMMN), −78 °C to rt, overnight. Inset: the crystal structure of CNCz-BNCz.
Fig. 2(a) Absorption spectrum (Abs.), fluorescence spectrum (Fl.), and phosphorescence spectrum (Ph.) of CNCz-BNCz in toluene solution at 1 × 10−5 mol L−1 under ambient conditions. (b) Transient photoluminescence spectra of CNCz-BNCz in toluene solution at 1 × 10−5 mol L−1 under an O2 atmosphere and N2 atmosphere, respectively.
Fig. 3(a) Device structures and energy level diagrams of devices A, B and C. (b) Energy transfer process from the TADF host and TADF sensitizer to the MR-TADF emitter. (c) Molecular structures used in OLED devices. (d) EL spectra at the luminance of 1000 cd m−2. (e) Color coordinates of device C on CIE 1931 color space compared with the other B–N based MR-TADF materials reported. (f) EQE and power efficiency versus luminance curves of OLED devices. (g) EQEmax summary of TADF-OLEDs with an emission peak from 550 to 650 nm.
Summary of EL characteristics for OLED devices
| Device | ELpeak [nm] |
| FWHM [nm] | EQEmax | PEmax | CIE | At 100 cd m−2 | At 1000 cd m−2 | ||
|---|---|---|---|---|---|---|---|---|---|---|
| EQE [%] | PE [lm W−1] | EQE [%] | PE [lm W−1] | |||||||
| A | 584 | 3.3 | 49 | 23.0 | 65.4 | [0.55, 0.45] | 10.8 | 24.8 | 5.4 | 9.6 |
| B | 584 | 3.1 | 50 | 24.7 | 67.4 | [0.53, 0.45] | 17.7 | 38.3 | 7.8 | 11.7 |
| C | 583 | 2.7 | 49 | 33.7 | 117.8 | [0.54, 0.46] | 27.7 | 69.1 | 16.4 | 29.6 |
Turn-on voltage.
External quantum efficiency.
Power efficiency.
Commission Internationale de l'Eclairage (CIE) coordinates.