| Literature DB >> 34349908 |
Cheng Wang1, Tian Du1, Yunfeng Deng1, Jiarong Yao2, Riqing Li2, Xuxia Zhao1, Yu Jiang3, Haipeng Wei3, Yanfeng Dang2, Rongjin Li2, Yanhou Geng1,3.
Abstract
The classical synthesis of quinoids, which involves Takahashi coupling and subsequent oxidation, often gives only low to medium yields. Herein, we disclose the keto-enol-tautomerism-assisted spontaneous air oxidation of the coupling products to quinoids. This allows for the synthesis of various indandione-terminated quinoids in high isolated yields (85-95%). The origin of the high yield and the mechanism of the spontaneous air oxidation were ascertained by experiments and theoretical calculations. All the quinoidal compounds displayed unipolar n-type transport behavior, and single crystal field-effect transistors based on the micro-wires of a representative quinoid delivered an electron mobility of up to 0.53 cm2 V-1 s-1, showing the potential of this type of quinoid as an organic semiconductor. This journal is © The Royal Society of Chemistry.Entities:
Year: 2021 PMID: 34349908 PMCID: PMC8278874 DOI: 10.1039/d1sc01685g
Source DB: PubMed Journal: Chem Sci ISSN: 2041-6520 Impact factor: 9.825
Fig. 1Previously reported (a) and our (b) method for the synthesis of quinoidal compounds.
Scheme 1Ligand effects on the synthesis of quinoidal compound 5a. Isolated yields are reported.
Substrate scopea
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Isolated yields are reported. For clarity, alkyl chains and hydrogen atoms are omitted in the X-ray structure of 5g; bond lengths (Å) are indicated in red.
Fig. 2Time dependence of UV-vis-NIR spectra of compound 4 in solution (CH2Cl2, 1 × 10−5 mol L−1) without (a) and with (b) BHT (2.0 equiv.) under bubbling air. The EPR spectra of 4 in argon and under bubbling air and of 5a under bubbling air (c).
Fig. 3Free-energy profiles for the oxidation of intermediates 3 and 4 to give quinoid 5a.
Fig. 4Solution UV-vis-NIR absorption spectra of 5a–5h in toluene (a and b) and HOMO/LUMO energy levels of 5a–5h (c).
TGBC OTFT device performances of the quinoidal compoundsa
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| 0.018 (0.015 ± 0.0017) | ∼12 | ∼104 |
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| 0.016 (0.012 ± 0.0031) | ∼14 | ∼104 |
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| 0.026 (0.022 ± 0.002961) | ∼15 | ∼104 |
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| 0.21 (0.15 ± 0.039) | ∼13 | ∼104 |
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| 0.007 (0.006 ± 0.0013) | ∼6 | ∼104 |
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| 0.002 (0.0015 ± 0.0004) | ∼8 | ∼104 |
The devices were fabricated by spin-coating and annealed at 120 °C for 10 min in argon.
Mobilities were measured under ambient conditions. The values in parentheses are the average mobilities and the standard deviations from at least 5 devices.
Threshold voltage.
Current on/off ratio.
Fig. 5Typical transfer (a) and output (b) characteristics of OFET based on the micro-wires of 5g.