Youngsik Kim1, Hyekyoung Choi1, Yeunhee Lee2, Weon-Kyu Koh1, Eunhye Cho1, Taewan Kim1, Hamin Kim1, Yong-Hyun Kim3,4, Hu Young Jeong5, Sohee Jeong6. 1. Department of Energy Science and Center for Artificial Atoms, Sungkyunkwan University (SKKU), Suwon, Republic of Korea. 2. Graduate School of Nanoscience and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea. 3. Graduate School of Nanoscience and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea. yong.hyun.kim@kaist.ac.kr. 4. Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea. yong.hyun.kim@kaist.ac.kr. 5. UNIST Central Research Facilities, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea. hulex@unist.ac.kr. 6. Department of Energy Science and Center for Artificial Atoms, Sungkyunkwan University (SKKU), Suwon, Republic of Korea. s.jeong@skku.edu.
Abstract
Despite the technological importance of colloidal covalent III-V nanocrystals with unique optoelectronic properties, their synthetic process still has challenges originating from the complex energy landscape of the reaction. Here, we present InP tetrapod nanocrystals as a crystalline late intermediate in the synthetic pathway that warrants controlled growth. We isolate tetrapod intermediate species with well-defined surfaces of (110) and ([Formula: see text]) via the suppression of further growth. An additional precursor supply at low temperature induces [Formula: see text]-specific growth, whereas the [110]-directional growth occurs over the activation barrier of 65.7 kJ/mol at a higher temperature, thus finalizes into the (111)-faceted tetrahedron nanocrystals. We address the use of late intermediates with well-defined facets at the sub-10 nm scale for the tailored growth of covalent III-V nanocrystals and highlight the potential for the directed approach of nanocrystal synthesis.
Despite the technological importance of colloidal covalent III-V nanocrystals with unique optoelectronic properties, their synthetic process still has challenges originating from the complex energy landscape of the reaction. Here, we present InP tetrapod nanocrystals as a crystalline late intermediate in the synthetic pathway that warrants controlled growth. We isolate tetrapod intermediate species with well-defined surfaces of (110) and ([Formula: see text]) via the suppression of further growth. An additional prepan class="Chemical">cursor supn>ply at low tempn>erature induces [Formula: see text]-spn>ecific growth, whereas the [110]-directional growth ocn>an class="Chemical">curs over the activation barrier of 65.7 kJ/mol at a higher temperature, thus finalizes into the (111)-faceted tetrahedron nanocrystals. We address the use of late intermediates with well-defined facets at the sub-10 nm scale for the tailored growth of covalent III-V nanocrystals and highlight the potential for the directed approach of nanocrystal synthesis.
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