| Literature DB >> 34274717 |
Qingyi Zeng1, Xijun Fu2, Sheng Chang3, Qingsong Zhang2, Zhu Xiong3, Yong Liu4, Guowen Peng2, Mi Li2.
Abstract
Highly photoactive FeVO4 photoanodes with ordered nanoblock morphology and uniform Ti-doping were prepared by drop-casting mixed Ti and V precursors onto FeOOH nanorod films and following an annealing process. The results indicate that Ti4+ is uniformly doped into the FeVO4 lattice by substituting V5+ and provides an increased number of O2- vacancies. The optimized film thickness and doping level are 620 nm and 0.3%, respectively. Compared to the undoped sample, the Ti-doped photoanode showed ~ 219% enhancement in photocurrent at 1.0 V vs Ag/AgCl under back illumination of AM 1.5, reaching a state-of-the-art value of ~ 1.47 mA cm-2, and also achieved stable and efficient overall water splitting activity with evolution rates of 28.3 and 14.1 μmol cm-2h-1 for H2 and O2, respectively. The excellent PEC performance could be attributed to the remarkably enhanced charge carrier concentration and conductivity, and the facilitated charge transfer kinetics across the semiconductor/electrolyte interface, as a result of Ti-doping.Entities:
Keywords: Drop-casting; FeVO(4); Nanoblock; Photoelectrochemical water splitting; Ti doping
Year: 2021 PMID: 34274717 DOI: 10.1016/j.jcis.2021.07.037
Source DB: PubMed Journal: J Colloid Interface Sci ISSN: 0021-9797 Impact factor: 8.128