Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM.

In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. HfOx films with different S-doping contents are achieved by atmospheric pressure chemical vapor deposition (APCVD) under a series of preparation temperatures. The effect of S on crystallinity, surface topography, element composition of HfOx thin films and resistive switching (RS) performance of HfOx-based devices are discussed. Compared with an undoped device, the VSET/VRESET of the S-doped device with optimal S content (~1.66 At.%) is reduced, and the compliance current (Icc) is limited from 1 mA to 100 μA. Moreover, it also has high uniformity of resistance and voltage, stable endurance, good retention characteristics, fast response speed (SET 6.25 μs/RESET 7.50 μs) and low energy consumption (SET 9.08 nJ/RESET 6.72 nJ). Based on X-ray photoelectron spectroscopy (XPS) data and fitting of the high/low resistance state (HRS/LRS) conduction behavior, a switching mechanism is considered to explain the formation and rupture of conductive filaments (CFs) composed of oxygen vacancies in undoped and S-doped HfOx-based devices. Doping by sulfur is proposed to introduce the appropriate concentration oxygen vacancies into HfOx film and suppress the random formation of CFs in HfOx-based device, and thus improve the performance of the TiN/HfOx/ITO device.